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A method for preparing triple-bandgap tin-doped copper-gallium-sulfur solar cell thin-film materials after sulfuration annealing after double-potential deposition

A technology of solar cells and thin film materials, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of complex configuration process of ionic liquids and limited application range, etc., and achieve controllable film composition, increase photogenerated current, and high repeatability Effect

Active Publication Date: 2018-09-28
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The electrodeposition process of this method needs to maintain a temperature of 45-65 ° C higher than normal temperature, and the configuration process of the required ionic liquid is relatively complicated, which limits the application range of this technology

Method used

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  • A method for preparing triple-bandgap tin-doped copper-gallium-sulfur solar cell thin-film materials after sulfuration annealing after double-potential deposition
  • A method for preparing triple-bandgap tin-doped copper-gallium-sulfur solar cell thin-film materials after sulfuration annealing after double-potential deposition
  • A method for preparing triple-bandgap tin-doped copper-gallium-sulfur solar cell thin-film materials after sulfuration annealing after double-potential deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) Copper chloride is dissolved in deionized water, stirred to make it fully dissolved, and the copper ion concentration in the aqueous solution is 0.001mol / L;

[0043] (2) Add gallium chloride again, stir to make it fully dissolve, and the concentration of gallium ions in the aqueous solution is 0.016mol / L;

[0044] (3) Add tin tetrachloride again, stir to make it fully dissolve, and the tin ion concentration in the aqueous solution is 0.0016mol / L;

[0045] (4) Add supporting electrolyte NaCl again, stir to make it fully dissolve to obtain an electrodeposition solution, and the NaCl concentration in the aqueous solution is 0.2mol / L;

[0046] (5) The Mo glass was ultrasonically cleaned with acetone and ethanol for 30 minutes each, then ultrasonically cleaned with deionized water for 30 minutes, and then dried for use.

[0047] (6) The Mo glass cleaned and ready for use in step (5) is used as the working electrode, the saturated calomel electrode is used as the referen...

Embodiment 2

[0058] (1) Copper chloride is dissolved in deionized water, stirred to make it fully dissolved, and the copper ion concentration in the aqueous solution is 0.001mol / L;

[0059] (2) Add gallium chloride again, stir to make it fully dissolve, and the concentration of gallium ions in the aqueous solution is 0.016mol / L;

[0060] (3) Add tin tetrachloride again, stir to make it fully dissolve, and the tin ion concentration in the aqueous solution is 0.0016mol / L;

[0061] (4) Add the supporting electrolyte NaCl again, stir to make it fully dissolve to obtain the electrodeposition solution, and the NaCl concentration in the aqueous solution is 0.8mol / L;

[0062] (5) The Mo glass was ultrasonically cleaned with ethanol and ammonia water for 30 minutes each, then ultrasonically cleaned with deionized water for 30 minutes, and then dried for use.

[0063] (6) The Mo glass cleaned and ready for use in step (5) is used as the working electrode, the saturated calomel electrode is used as ...

Embodiment 3

[0067] (1) Copper chloride is dissolved in deionized water, stirred to make it fully dissolved, and the copper ion concentration in the aqueous solution is 0.001mol / L;

[0068] (2) Add gallium chloride again, stir to make it fully dissolve, and the concentration of gallium ions in the aqueous solution is 0.016mol / L;

[0069] (3) Add tin tetrachloride again, stir to make it fully dissolve, and the tin ion concentration in the aqueous solution is 0.0024mol / L;

[0070] (4) Add supporting electrolyte NaCl again, stir to make it fully dissolve to obtain an electrodeposition solution, and the NaCl concentration in the aqueous solution is 1mol / L;

[0071] (5) The Mo glass was ultrasonically cleaned with ethanol and ammonia water for 30 minutes each, then ultrasonically cleaned with deionized water for 30 minutes, and then dried for use.

[0072] (6) The Mo glass cleaned and ready for use in step (5) is used as the working electrode, the saturated calomel electrode is used as the ref...

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Abstract

The invention discloses a method for preparing a three-band-gap tin-doped copper-gallium-sulfur solar cell thin film material through sulfuration annealing after double-potential deposition. The method comprises the following steps that 1, copper chloride, gallium chloride and stannic chloride are dissolved in deionized water in sequence and are subjected to electro-deposition through a three-electrode system, and a precursor thin film is obtained in the deposition process through double-potential deposition; and 2, a CuSn thin film is deposited through a high potential at first to effectively avoid hydrogen evolution and then is deposited through a low potential, for an induced deposition mechanism of Ga, the deposition efficiency of the Ga is beneficially improved through an overpotential formed by electrode potential abrupt change and the CuSn thin film deposited under a high pulse, and then the precursor thin film is subjected to sulfuration annealing after being cleaned and dried, so that a tin-doped copper-gallium-sulfur thin film is obtained. According to the three-band-gap tin-doped copper-gallium-sulfur solar cell thin film material prepared through the method, the performance is good, the absorption of solar spectrums by the three-band-gap tin-doped copper-gallium-sulfur solar cell thin film material is significantly expanded, and photo-generated currents of the three-band-gap tin-doped copper-gallium-sulfur solar cell thin film material are significantly increased. The method for preparing the three-band-gap tin-doped copper-gallium-sulfur solar cell thin film material through sulfuration annealing after double-potential deposition is low in manufacturing cost and good in repeatability, and large-area deposition can be achieved easily.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and new energy sources, and relates to a preparation method of electrodeposition for absorbing layer thin films of solar cells, in particular to a triple-bandgap tin-doped copper-gallium-sulfur solar cell thin-film formed by double-potential electrodeposition followed by sulfuration annealing The method of preparation of the material. Background technique [0002] Energy is an important material basis for the existence and development of human society. The exploitation and utilization of traditional energy such as coal, oil and natural gas are decreasing day by day and have a great impact on the current environmental problems. People urgently need to find a new type of non-polluting renewable clean energy to replace traditional energy. Solar energy has attracted much attention because of its cleanest, environmental protection, inexhaustible, inexhaustible, safe and stable characte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/56C25D5/18C25D5/50H01L31/032
CPCC25D3/56C25D5/18C25D5/505H01L31/0323Y02E10/541
Inventor 杨穗易捷曹洲黄晓攀钟建新
Owner XIANGTAN UNIV