Epitaxial growth method of yttrium iron garnet film

A yttrium iron garnet, epitaxial growth technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem of no way to YIG thin film, can not accurately control the thickness of YIG thin film growth, etc., to achieve spin pump damping The effect of small factor, small coercivity and narrow ferromagnetic resonance linewidth

Active Publication Date: 2016-10-26
NANJING UNIV
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Problems solved by technology

However, the methods provided above have no way to ensure the growth of high-quality and precisely contro

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  • Epitaxial growth method of yttrium iron garnet film
  • Epitaxial growth method of yttrium iron garnet film
  • Epitaxial growth method of yttrium iron garnet film

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[0021] The technical solutions of the present invention will be described in further detail below by examples in conjunction with the accompanying drawings, but the present invention is not limited to the examples given.

[0022] Explanation of reference signs: 1-target material, 2-sample holder, 3-heating wire, 4-observation window, 5-laser optical path, 6-pump group air inlet, 7-RHEED monitoring facility, 8-fluorescent screen and camera, 9 - protective gas vent, 10 - ozone generator, 11, 12 - small molecular pump.

[0023] Step 1: Pump the vacuum chamber containing the processed GdGaGa substrate to 8.6±1×10 -6 Pa, and heat the gadolinium gallium garnet substrate to a constant temperature of about 736°C. During the heating process, when it is heated to about 250°C, a 1.4×10 -3 A mixed gas of mbar ozone (20% by mass fraction) and oxygen (80% by mass fraction) was used as a shielding gas to avoid oxygen deficiency on the substrate during the heating process.

[0024] In this ...

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Abstract

An epitaxial growth method of a yttrium iron garnet film comprises the following steps: vacuumizing a vacuum cavity with a treated yttrium iron garnet substrate to be 8.6+/-1*10-6 Pa, and heating the yttrium iron garnet substrate to the constant temperature which is 736 DEG C; in a heating process, feeding ozone when heating to the temperature of 250 DEG C; after heating to the temperature of 736 DEG C, maintaining air pressure of the vacuum cavity, adjusting the mass fraction of the ozone to be 40%, meanwhile insulating for half a hour, and starting a reflective high-energy electron diffraction instrument (RHEED) to adjust so as to obtain diffraction spots of a substrate; maintaining real-time and in-situ monitoring of the RHEED in the whole process, and focusing laser onto a YIG target through a lens by using a KrF excimer laser of which the wavelength is 248 nm; after growth of the film is finished, maintaining the temperature of the substrate unchanged, annealing in situ for 15 minutes, then naturally cooling the film to the temperature about 250 DEG C, stopping protective gas and cooling to the room temperature. The obtained YIG film has uniform components, is controllable in thickness and good in process repeatability, and has high preparation efficiency.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to yttrium iron garnet (YIG) single crystal thin film material, a thin film growth method of laser molecular beam epitaxy and the application of the properties of magnetism and spin. It also belongs to the application field of spin magneto-optical devices. Background technique [0002] In recent years, with the continuous development of electronic technology, people have higher and higher requirements for electronic products. Now Moore's Law has entered a bottleneck, and the size of transistors is approaching the limit. People urgently need to develop new materials, or create new electronic computing, storage modes, etc., so as to meet people's increasing needs. YIG has gradually entered people's field of vision due to its many advantages such as room temperature ferromagnetism, small coercive force, small spin pump damping factor and good insulation. Insu...

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Application Information

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IPC IPC(8): C30B29/28C30B25/16
CPCC30B25/16C30B29/28
Inventor 王学锋陈业全钮伟徐永兵张荣
Owner NANJING UNIV
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