Method for preparing hexagonal boron nitride (h-BN) and hybrid structure thereof through plasma enhanced chemical vapor deposition (PECVD)

Abstract

The invention belongs to the technical field of preparation of hexagonal boron nitride (h-BN) and a hybrid structure thereof, and particularly relates to a method for preparing h-BN and the hybrid structure thereof through plasma enhanced chemical vapor deposition (PECVD). Copper foil serves as a substrate, solid borane ammonia complex serves as a boron source and a nitrogen source, and the hybrid structure of the h-BN is prepared through PECVD. The method includes the specific steps that the substrate and the borane ammonia complex are arranged in a quartz boat and then put into a PEVCD system to be vacuumized; a reaction furnace is heated to a corresponding temperature, gas is introduced to the reaction furnace, and then the substrate is moved to the center of the furnace; the system pressure is adjusted, and heat treatment is carried out; the h-BN and the hybrid structure thereof are grown; and the h-BN and the hybrid structure thereof are cooled to the room temperature. The method for preparing the h-BN and the hybrid structure thereof through PECVD is simple in process, easy and convenient to operate, high in controllability and capable of achieving continuous regulation of the band gap of the h-BN and the hybrid structure thereof.

Description

technical field [0001] The invention belongs to the technical field of preparation of hexagonal boron nitride and its hybrid structure, and in particular relates to a method for preparing hexagonal boron nitride and its hybrid structure by plasma enhanced chemical vapor deposition. Background technique [0002] Hexagonal boron nitride and graphite have a similar layered structure, so it is also called "white graphite", and there is a weak van der Waals interaction between layers. Hexagonal boron nitride is a wide band gap insulating material with a band gap of ~5.9eV, and has high thermal conductivity, mechanical strength and chemical stability. Its atomic-scale flatness and thickness make it an ideal dielectric material in field-effect transistors and tunneling devices. The hybrid structure of hexagonal boron nitride, like hexagonal carbon boron nitrogen (h-BNC), has the properties of semiconductor materials, and can also realize the adjustment of the band gap of the hexag...

AI Technical Summary

Problems solved by technology

In recent years, researchers have realized the preparation of high-quality hexagonal boron nitride and its hybrid structure by ordinary CVD (Guangyuan Lu, Nature Communications, 6, 6160 (2015); Yongji Gong, Nature Communications, 5, 3193 (2014 )). However, these methods require thermal excitation, and the controllable growth of hexagonal boron nitride can only be achieved at a higher temperature, which consumes a lot of energy and has certain restrictions on material selection.

In addition, these methods have not been able to achieve continuous tuning of the bandgap of the hexagonal boron nitride hybrid structure

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