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Method for preparing hexagonal boron nitride (h-BN) and hybrid structure thereof through plasma enhanced chemical vapor deposition (PECVD)

A technology of hexagonal boron nitride and plasma, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the failure to realize the continuous regulation of the band gap of the hexagonal boron nitride hybrid structure and the limitation of material selection , high energy consumption and other issues, to achieve the effect of good quality, lower temperature range, and low energy consumption

Active Publication Date: 2016-12-21
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In recent years, researchers have realized the preparation of high-quality hexagonal boron nitride and its hybrid structure by ordinary CVD (Guangyuan Lu, Nature Communications, 6, 6160 (2015); Yongji Gong, Nature Communications, 5, 3193 (2014 )). However, these methods require thermal excitation, and the controllable growth of hexagonal boron nitride can only be achieved at a higher temperature, which consumes a lot of energy and has certain restrictions on material selection.
In addition, these methods have not been able to achieve continuous tuning of the bandgap of the hexagonal boron nitride hybrid structure

Method used

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  • Method for preparing hexagonal boron nitride (h-BN) and hybrid structure thereof through plasma enhanced chemical vapor deposition (PECVD)
  • Method for preparing hexagonal boron nitride (h-BN) and hybrid structure thereof through plasma enhanced chemical vapor deposition (PECVD)
  • Method for preparing hexagonal boron nitride (h-BN) and hybrid structure thereof through plasma enhanced chemical vapor deposition (PECVD)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Example 1, preparation of single-layer hexagonal boron nitride single crystal and thin film on the surface of copper foil

[0043] In the first step, the copper foil and borane ammonium complex are placed in a quartz boat, and then placed in a plasma-enhanced chemical vapor deposition system and vacuumed;

[0044] In the second step, the reaction furnace is heated to 1070°C, and H 2 , and then move the copper foil to the center of the furnace;

[0045] The third step is to introduce hydrogen with a flow rate of 200sccm, and adjust the system pressure to 570Torr for heat treatment for 4 hours;

[0046] The fourth step is to adjust the system pressure to 1.05Torr, and turn on the plasma generator, set the power to 60W, the hydrogen flow rate to 200sccm, and the growth time to 30min to grow hexagonal boron nitride;

[0047] The fifth step is to turn off the heating power supply, continue to feed the gas, and cool down to room temperature rapidly.

[0048] The light micr...

Embodiment 2

[0049] Example 2, using graphene single crystal to prepare hexagonal boron nitride hybrid structure on the surface of copper foil

[0050] In the first step, place the copper foil and borane ammonium complex grown on graphene single crystal into a quartz boat, and then put it into a plasma-enhanced chemical vapor deposition system and vacuumize;

[0051] In the second step, the reaction furnace is heated to 1070°C, and H 2 , and then move the copper foil that has grown the graphene single crystal to the center of the furnace;

[0052] The third step is to introduce hydrogen gas with a flow rate of 200sccm, adjust the system pressure to 200Torr, and perform heat treatment for 10 minutes;

[0053] The fourth step is to adjust the system pressure to 1.05Torr, and turn on the plasma generator, set the power to 80W, the hydrogen flow rate to 200sccm, and the growth time to 40min, using graphene single crystal to prepare hexagonal boron nitride hybrid structure;

[0054] The fifth s...

Embodiment 3

[0056] Example 3, using a single-layer graphene film to prepare a hexagonal boron nitride hybrid structure on the surface of copper foil

[0057] In the first step, put the copper foil and borane ammonium complex grown on single-layer graphene into a quartz boat, and then put it into a plasma-enhanced chemical vapor deposition system and vacuumize;

[0058] In the second step, the reaction furnace is heated to 1070°C, and H 2 , and then move the copper foil that has grown a single-layer graphene film to the center of the furnace;

[0059] The third step is to introduce hydrogen gas with a flow rate of 200sccm, adjust the system pressure to 200Torr, and perform heat treatment for 10 minutes;

[0060] The fourth step is to adjust the system pressure to 1.05Torr, and turn on the plasma generator, set the power to 60W, the hydrogen flow rate to 200sccm, and the growth time to 5~100min, and use single-layer graphene to prepare hexagonal boron nitride hybrid structure;

[0061] Th...

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Abstract

The invention belongs to the technical field of preparation of hexagonal boron nitride (h-BN) and a hybrid structure thereof, and particularly relates to a method for preparing h-BN and the hybrid structure thereof through plasma enhanced chemical vapor deposition (PECVD). Copper foil serves as a substrate, solid borane ammonia complex serves as a boron source and a nitrogen source, and the hybrid structure of the h-BN is prepared through PECVD. The method includes the specific steps that the substrate and the borane ammonia complex are arranged in a quartz boat and then put into a PEVCD system to be vacuumized; a reaction furnace is heated to a corresponding temperature, gas is introduced to the reaction furnace, and then the substrate is moved to the center of the furnace; the system pressure is adjusted, and heat treatment is carried out; the h-BN and the hybrid structure thereof are grown; and the h-BN and the hybrid structure thereof are cooled to the room temperature. The method for preparing the h-BN and the hybrid structure thereof through PECVD is simple in process, easy and convenient to operate, high in controllability and capable of achieving continuous regulation of the band gap of the h-BN and the hybrid structure thereof.

Description

technical field [0001] The invention belongs to the technical field of preparation of hexagonal boron nitride and its hybrid structure, and in particular relates to a method for preparing hexagonal boron nitride and its hybrid structure by plasma enhanced chemical vapor deposition. Background technique [0002] Hexagonal boron nitride and graphite have a similar layered structure, so it is also called "white graphite", and there is a weak van der Waals interaction between layers. Hexagonal boron nitride is a wide band gap insulating material with a band gap of ~5.9eV, and has high thermal conductivity, mechanical strength and chemical stability. Its atomic-scale flatness and thickness make it an ideal dielectric material in field-effect transistors and tunneling devices. The hybrid structure of hexagonal boron nitride, like hexagonal carbon boron nitrogen (h-BNC), has the properties of semiconductor materials, and can also realize the adjustment of the band gap of the hexag...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/50
CPCC23C16/342C23C16/50
Inventor 孙正宗巴坤
Owner FUDAN UNIV
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