Method for preparing graphene thin film by chemical vapor deposition at normal pressure and low temperature

A graphene film, low-temperature chemical technology, applied in graphene, gaseous chemical plating, nano-carbon and other directions, to achieve the effect of high quality, wide carbon source sources, and improved catalytic ability

Inactive Publication Date: 2017-04-26
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention mainly aims at the problem that graphene must be prepared at high temperature by the existing chemical vapor depos

Method used

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  • Method for preparing graphene thin film by chemical vapor deposition at normal pressure and low temperature
  • Method for preparing graphene thin film by chemical vapor deposition at normal pressure and low temperature
  • Method for preparing graphene thin film by chemical vapor deposition at normal pressure and low temperature

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Embodiment 1

[0031] In this embodiment, a graphene film is prepared by chemical deposition at normal pressure and low temperature, including the following steps:

[0032] (1) Ultrasonic clean the copper foil with hydrochloric acid, acetone and deionized water for 5~10 minutes, then remove the moisture on the surface of the copper foil, then put the copper foil into the quartz tube, and make the copper foil in the middle of the tube furnace, adjust The flow rate of argon gas is 800 sccm, and the flow rate of hydrogen gas is 30 sccm. In this atmosphere, the copper foil is heated to 950°C, and then annealed for 50 minutes;

[0033] (2) Cool the annealed copper foil in step (1) to 700°C at a constant speed in an argon atmosphere, where the flow rate of argon gas is 300 sccm, and the cooling rate is 28°C / min;

[0034] (3) When the temperature of the copper foil in step (2) drops to 700°C, feed methane and argon to grow graphene, wherein the flow rate of methane is 2 sccm, the flow rate of argon...

Embodiment 2

[0040] In this embodiment, a graphene film is prepared by chemical deposition at normal pressure and low temperature, including the following steps:

[0041] (1) Ultrasonic clean the copper foil with hydrochloric acid, acetone and deionized water for 5~10 minutes, then remove the moisture on the surface of the copper foil, then put the copper foil into the quartz tube, and make the copper foil in the middle of the tube furnace, adjust The flow rate of argon gas is 800 sccm, and the flow rate of hydrogen gas is 30 sccm. In this atmosphere, the copper foil is heated to 950°C, and then annealed for 50 minutes;

[0042] (2) Cool the annealed copper foil in step (1) to 400°C at a constant rate in an argon atmosphere, where the argon flow rate is 300 sccm, and the cooling rate is 30°C / min;

[0043] (3) When the temperature of the copper foil in step (2) drops to 400°C, feed methane and argon to grow graphene, wherein the flow rate of methane is 10 sccm, the flow rate of argon gas is...

Embodiment 3

[0049] In this embodiment, a graphene film is prepared by chemical deposition at normal pressure and low temperature, including the following steps:

[0050] (1) Using magnetron sputtering method on SiO 2 Prepare copper-nickel alloy film on / Si sheet, then put the copper-nickel alloy film into the quartz tube, and make the copper-nickel alloy film in the middle of the tube furnace, adjust the flow of argon to 900 sccm, and the flow of hydrogen to 30 sccm, in this atmosphere environment Heat the copper-nickel alloy film to 900°C, and then anneal for 65 minutes;

[0051] (2) The annealed copper-nickel alloy film in step (1) is cooled to 400°C at a uniform speed in an argon atmosphere, wherein the argon gas flow rate is 400 sccm, and the cooling rate is 25°C / min;

[0052] (3) When the temperature of the copper-nickel alloy film in step (2) drops to 400°C, feed the mixed gas of acetylene and argon to grow graphene, wherein the flow rate of the mixed gas is 10 sccm, and the volume...

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Abstract

The invention discloses a method for preparing a graphene thin film by chemical vapor deposition at normal pressure and low temperature. According to the method, a metal substrate is subjected to high-temperature annealing treatment firstly and then temperature-reduction annealing treatment; and next, the graphene thin film is obtained on the surface of the metal substrate through the chemical vapor deposition method. By virtue of the method, the catalysis activity of the metal substrate is improved, so that the growth temperature of graphene is lowered, and the energy consumption and cost of industrial production of the graphene thin film are lowered consequently; and compared with a conventional chemical vapor deposition method for synthesizing the graphene thin film, the method disclosed by the invention is simple in process, the carbon source is wide in source, the prepared graphene thin film is high in quality, and the number of layers is uniform and controllable.

Description

technical field [0001] The invention relates to the field of graphene preparation, in particular to a method for preparing a graphene film at normal pressure and low temperature by chemical vapor deposition. Background technique [0002] Graphene is composed of a single layer of carbon atoms based on sp 2 Hexagonal honeycomb two-dimensional crystals composed of hybrids have attracted widespread attention in the scientific community since they were discovered by Andre Geim and Konstantin Novoselov in 2004. The excellent properties of graphene in electricity, optics, heat, mechanics, etc. make it have great potential application prospects in the fields of batteries, flexible transparent electrodes, energy storage materials, electrocatalysts, nanoelectronic devices, and composite materials. [0003] At present, the preparation methods of graphene films mainly include: mechanical exfoliation method, reduced graphite oxide method, chemical vapor deposition (CVD), epitaxial growt...

Claims

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Application Information

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IPC IPC(8): C01B32/186C23C16/26C23C16/02
CPCC01P2002/82C01P2004/03C01P2004/04C23C16/02C23C16/26
Inventor 胡宝山赵文斌
Owner CHONGQING UNIV
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