Liquid composition for cleaning semiconductor device, method for cleaning semiconductor device, and method for fabricating semiconductor device
A technology of liquid composition and manufacturing method, which can be applied to cleaning methods using liquids, semiconductor/solid-state device manufacturing, and preparation of detergent mixture compositions, etc., can solve problems such as large aspect ratio and pattern collapse, and achieve damage inhibition. , to produce high-precision effects
Active Publication Date: 2017-04-26
MITSUBISHI GAS CHEM CO INC
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Problems solved by technology
In addition, in the case of forming a pattern of 0.2 μm or less, for a photoresist with a film thickness of 1 μm, the aspect ratio of the pattern (divided by the photoresist film thickness by the photoresist line width) Ratio) becomes too large, resulting in problems such as pattern collapse
Method used
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Embodiment 1～9
[0101] The removability of titanium nitride was studied using a wafer with a titanium nitride film. Using the cleaning liquid compositions 1A to 1I listed in Table 1, they were immersed at the temperature shown in Table 2 for 3 minutes, and then rinsed with ultrapure water and dried by spraying dry nitrogen. The film thicknesses before and after immersion were obtained using a fluorescent X-ray apparatus, and the etching rate was calculated, and the results are summarized in Table 2.
[0102] Next, using the wafers with the copper and cobalt films, the corrosion resistance of copper and cobalt was investigated using the cleaning liquid compositions 1A to 1I listed in Table 1. After immersion at the temperature shown in Table 2 for 30 minutes, rinse with ultrapure water and dry by spraying dry nitrogen were performed. The concentration of copper or cobalt in the cleaning solution after immersion was determined by an inductively coupled plasma emission spectrometer, and the etc...
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The present invention relates to a liquid composition for cleaning a semiconductor device, a method for cleaning a semiconductor device using the same, and a method for fabricating a semiconductor. The object is to remove a titanium nitride hard mask while suppressing damage to copper, copper alloys, cobalt and cobalt alloys upon fabricating a semiconductor device. A liquid cleaning composition of the present invention used for fabricating a semiconductor device comprises hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphoric acid at 0.0001-0.01% by mass, a zinc salt at 0.0001-0.1% by mass and water.
Description
technical field [0001] The present invention relates to a liquid composition for cleaning a semiconductor element used in a manufacturing process of a semiconductor integrated circuit, a method for cleaning a semiconductor element using the same, and a method for manufacturing a semiconductor element. Background technique [0002] In the manufacture of highly integrated semiconductor elements, a conductive thin film such as a metal film as a wiring material for electrical conduction and an interlayer insulating film for the purpose of insulating between conductive thin films are usually formed on a silicon wafer or other element, and then A photoresist is evenly coated on the surface to form a photosensitive layer, which is selectively exposed and developed to form a desired photoresist pattern. Next, dry etching is performed on the interlayer insulating film by using the photoresist pattern as a mask, thereby forming a desired pattern on the thin film. Then, generally, a s...
Claims
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IPC IPC(8): H01L21/027H01L21/02
CPCH01L21/02057H01L21/0331C11D3/0073C11D3/3947C11D7/06C11D7/10C11D7/36G03F7/425H01L21/02063G03F7/423C11D2111/22C11D3/044C11D3/042C11D3/046H01L21/02052H01L21/0337B08B3/12C11D3/364C11D3/3942H01L21/76814H01L23/5226H01L23/53238
Inventor 青山公洋田岛恒夫
Owner MITSUBISHI GAS CHEM CO INC