Low-cost tantalum carbide coating preparation method

A tantalum carbide, low-cost technology, applied in the field of low-cost tantalum carbide coating preparation, can solve the problems of high thermal expansion coefficient of tantalum carbide coating, cracks and pores in the coating, high equipment and operating costs, etc., to reduce cracking Problem, simple method, compact structure effect

Inactive Publication Date: 2017-05-24
BEIJING CENTURY GOLDRAY SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The chemical vapor deposition (CVD) method is commonly used to prepare tantalum carbide. Its disadvantages are: high equipment and operating costs; cracks and pores are prone to appear in the coating. crystal protection
The main reason for

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0023] Example one:

[0024] 1) Select graphite substrate and clean it with high-purity alcohol twice to avoid surface contamination;

[0025] 2) Weigh an appropriate amount of 19.6g of TaC powder and 0.4g of WC powder; measure 20ml of deionized water, and use a ball mill to mill in an agate ball mill for 2 hours. Take it out, add 0.2g polyvinyl alcohol and stir; obtain a suspension of TaC coating, and let it stand for use;

[0026] 3) Using a paint brush, evenly brush the TaC coating suspension on the surface of the graphite substrate;

[0027] 4) Put the coated graphite substrate in a heating furnace, pass the protective gas argon, the pre-sintering temperature is 200℃, and the time is 0.5h;

[0028] 5) Place the coated graphite substrate in a heating furnace and pass the protective gas argon with a pressure of 9×10 4 Pa, 7h to 2300℃, keep for 2h; after the furnace is slowly cooled to room temperature, the furnace can be opened for use.

Example Embodiment

[0029] Embodiment two:

[0030] 1) Select quartz substrate and clean it with high-purity alcohol 3 times to avoid surface contamination;

[0031] 2) Weigh an appropriate amount of 16g ​​of TaC powder, 3.75g of Ta powder, and 0.25g of C powder; measure 10ml of deionized water, and use a ball mill to mill in an agate ball mill for 20 hours. Take it out, add 1.6g of phenolic resin and stir to obtain a suspension of TaC coating, and let it stand for use;

[0032] 3) Using a spray gun, evenly brush the TaC coating suspension on the surface of the graphite substrate;

[0033] 4) Put the coated quartz substrate in a vacuum drying furnace, evacuated, and the pre-sintering temperature is 100°C for 1h;

[0034] 5) Place the coated quartz substrate in a heating furnace and pass protective gas hydrogen gas at a pressure of 8×10 4 Pa, 5h to 1600℃, keep for 4h; after the furnace is slowly cooled to room temperature, the furnace can be opened for use.

[0035] The TaC coating prepared by the invention...

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PUM

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Abstract

The invention discloses a low-cost tantalum carbide coating preparation method. The method comprises the following steps that a matrix is pretreated at first, then, tantalum carbide, sintering aids, adhesives and solvents are adopted for preparing turbid liquid, the turbid liquid is uniformly sprayed or brushed to the surface of the matrix, and finally the matrix with the sprayed or brushed matrix is subjected to pre-temperature or sintering treatment, and a tantalum carbide coating with the uniform thickness and dense structure can be obtained on the matrix. The surface of the matrix is coated with the TaC coating with the completely dense structure, and the surface of the matrix can be isolated and protected to a large extent due to the coating; the method can be used for crystal and semiconductor production device or components, and the phenomenon that crystal defects are caused due to the fact that device or component surface layer particles enter crystals during crystal growth is avoided. Compared with the CVD deposition technology, the technological process is low in cost, and the method is simpler, easy to implement, good in repeatability and capable of directly forming the compact and crack-free coating on the surface of a material.

Description

Technical field [0001] The invention relates to the field of production and preparation of crystals and semiconductor materials, in particular to a method for preparing a low-cost tantalum carbide coating. Background technique [0002] Crystals, semiconductor production devices or components refer to crystals, semiconductor production bases, substrates, crucibles, heat pipes, temperature measuring tubes and other high-temperature and high-purity materials or components. Its purity and chemical stability are directly related to semiconductors. The purity, performance and quality of materials are therefore the key materials for crystal and semiconductor production. Compared with traditional silicon, the crystal growth of third-generation semiconductors such as SiC, GaN, and AlN requires a higher temperature (>2100°C) and a corrosive atmosphere. And in the process of physical vapor transport (PVT) crystal growth, the sublimated source powder (silicon, aluminum) has high reactivi...

Claims

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Application Information

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IPC IPC(8): C04B41/50C04B35/56C04B35/645
CPCC04B41/5057C04B35/5607C04B35/645C04B2235/3847C04B2235/658
Inventor 袁振洲刘欣宇何丽娟
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD
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