A method for amine-assisted low-temperature synthesis of porous boron nitride

A technology of boron nitride and low temperature, which is applied in the fields of chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve problems such as the inability to obtain boron nitride, achieve the effects of reducing calcination temperature, lowering synthesis temperature, and saving costs

Inactive Publication Date: 2018-10-12
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the calcination temperature is lower than that reported in the literature, and the crystallinity of boron nitride is significantly improved, boron nitride with a porous structure cannot be obtained.

Method used

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  • A method for amine-assisted low-temperature synthesis of porous boron nitride
  • A method for amine-assisted low-temperature synthesis of porous boron nitride

Examples

Experimental program
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Effect test

Embodiment 1

[0027] (1) Dissolve 1 g of ammonia borane in an Erlenmeyer flask containing 40 mL of 1,4-dioxane solution, stir until all the solids are dissolved, and transfer to the inner polytetrafluoroethylene container of the reaction kettle for use;

[0028] (2) Dissolve 0.1 g of octadecylamine in an Erlenmeyer flask containing 20 mL of 1,4-dioxane solution, ultrasonically disperse until clear, and set aside;

[0029] (3) The solution prepared in step (2) is added to the inner sleeve polytetrafluoroethylene container of the reaction kettle of step (1) to obtain the mixed solution of ammonia borane-octadecylamine, and the reaction kettle is put into a 160° C. In an oven, the airtight reaction (i.e. solvothermal reaction under saturated vapor pressure) was performed for 12 hours;

[0030] (4) The stock solution was allowed to stand at room temperature for 12 hours, then centrifuged, and the resulting precipitate was dried at 80°C for 5 hours to obtain a white powder;

[0031] (5) The whi...

Embodiment 2

[0034] The octadecylamine consumption in the step (2) in the embodiment 1 is reduced to 0.025g, and other steps are with embodiment 1. Obtain product with embodiment 1.

Embodiment 3

[0036] The amount of octadecylamine in step (2) in Example 1 is increased to 0.5g, and other steps are the same as in Example 1. Obtain product with embodiment 1.

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Abstract

The invention relates to a method for synthesizing porous boron nitride at low temperature under amine assisting action. The method comprises the following steps of (1) dissolving borane ammonia into 1,4-dioxane; (2) dissolving amine into the 1,4-dioxane; (3) adding a solution prepared in step (2) into a solution in step (1), heating to 140 to 200 DEG C, and reacting for 12 to 24h in a sealing way; (4) standing, centrifuging and drying, so as to obtain white powder; (5) putting the white powder into a tubular furnace, and calcining for 6 to 8h at the temperature of 650 to 750 DEG C under ammonia atmosphere, so as to obtain the porous boron nitride. The method has the advantages that the environment-friendly effect is good, the subsequent treatment of dangerous solutions, such as hydrofluoric acid and sodium hydroxide, is not needed, and the operation is safe.

Description

technical field [0001] The technical scheme of the invention belongs to boron nitride materials, specifically a preparation method of porous boron nitride. Background technique [0002] Boron nitride (BN) is a III-V group compound, which is an important non-oxide material with excellent performance. Among them, hexagonal boron nitride (h-BN) belongs to the hexagonal crystal system, because it has similar lattice parameters and layered structure to graphite, and because of its white appearance, it is called "white graphite". [0003] Boron nitride is favored as an analogue of carbon materials. Boron nitride inherits a series of advantages of carbon materials while making up for the shortcomings of carbon materials. Its characteristics are light weight, high temperature resistance, good thermal conductivity, strong chemical stability, strong oxidation resistance, good biocompatibility, good electrical insulation, and no obvious melting point. Porous hexagonal boron nitride h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/064
CPCC01B21/0646C01P2002/72C01P2004/04
Inventor 刘超谭宏亮纪秀杰赵阳阳吴芳芳李颖
Owner HEBEI UNIV OF TECH
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