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Anti-visible and near-infrared memory pixels based on organic dyes

A pixel and memory technology, applied in the field of anti-visible light and near-infrared memory pixels, can solve the problems of near-infrared pixels not having anti-visible interference ability, misjudgment and misreading, etc.

Active Publication Date: 2019-05-14
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

An unavoidable problem is that although these organic materials exhibit high near-infrared sensitivity, they are more sensitive to visible light (390nm-760nm); Infrared pixels do not have the ability to resist visible interference, which will cause misjudgment and misreading in actual use

Method used

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  • Anti-visible and near-infrared memory pixels based on organic dyes
  • Anti-visible and near-infrared memory pixels based on organic dyes
  • Anti-visible and near-infrared memory pixels based on organic dyes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] Example 1. Preparation of peryleneimide ROT300 / vanadyl phthalocyanine laminated photoresistor on polyethylene terephthalate film and its application in near-infrared light detection

[0065] 1) Clean the substrate

[0066] After the polyethylene terephthalate film was ultrasonically cleaned with detergent, secondary water, absolute ethanol, and isopropanol for 10 minutes, it was blown dry with nitrogen for use;

[0067] 2) Put the substrate obtained in step 1) into a vacuum coating machine, and first use the method of vacuum evaporation (vacuum degree is 3×10 -4 Pa, evaporation rate 1 angstrom / second) deposit a layer of gold with a thickness of 20 to 40 nanometers on the substrate as an electrode, and the channel length and width of the gold electrode are determined by a mask. Subsequently, vacuum thermal evaporation (vacuum degree of 3 × 10 -4 Pa, evaporation speed 1 Angstrom / second) perylene imide ROT300 with a thickness of 10 nanometers and a vanadyl phthalocyanine...

Embodiment 2

[0073] Example 2. Preparation of a photosensitive voltage divider constructed of all-organic conjugated molecules on a polyethylene terephthalate film

[0074] 1) The polyethylene terephthalate film was ultrasonically cleaned with detergent, secondary water, absolute ethanol, and isopropanol for 10 minutes in sequence, and then dried with nitrogen gas for use;

[0075] 2) Put the substrate obtained in step 1) into a vacuum coating machine, and first use the method of vacuum evaporation (vacuum degree is 3×10 -4 Pa, the evaporation rate is 1 angstrom / second) to deposit gold with a thickness of 20 to 40 nanometers on the substrate as an electrode, and the channel length and width of the gold electrode are determined by a mask. The gold electrode area covered by the heterojunction film has a channel length of 30 microns and a channel width of 1200 microns. Subsequently, the surface of the gold electrode in the designated photoresistor area was sequentially vacuum thermally evapo...

Embodiment 3

[0084] Example 3. Preparation of organic dye near-infrared memory pixels on polyethylene terephthalate film

[0085] 1) The polyethylene terephthalate film was ultrasonically cleaned with detergent, secondary water, absolute ethanol, and isopropanol for 10 minutes in sequence, and then blown dry with nitrogen for use;

[0086] 2) Put the substrate obtained in step 1) into a vacuum coating machine, and first use the method of vacuum evaporation (vacuum degree is 3×10 -4 Pa, evaporation speed 1 angstrom / second) deposits gold with a thickness of 20 to 40 nanometers on the substrate as the interdigital electrode, the channel length and width of the gold electrode are determined by the mask plate, the channel length is 50 microns, and the channel length is 50 microns. The track width was 4500 microns.

[0087] 3) Polyisoindigo-dithiophene (or polyisoindigo-dithiophene or polyisoindigo-dithiophene-isoindigo-dithiophene mixed polymer) o-dichloromethane on the surface of the film obt...

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Abstract

The invention discloses an anti-visible light near-infrared memory pixel based on an organic dye. The memory pixel, from top to bottom, is the thin film resistance layer, metal electrode layer, isolation layer and organic field effect transistor memory in the photosensitive voltage divider; wherein, the metal electrode layer in the photosensitive voltage divider is located in the organic field effect transistor memory Above the metal electrode layer in the photosensitive voltage divider; the spacer layer fills the area not covered by the metal electrode layer in the photosensitive voltage divider between the thin film resistive layer in the photosensitive voltage divider and the dielectric layer in the organic field effect transistor memory. The photoresponse of the photosensitive voltage divider in the near-infrared is significantly better than that of visible light. The near-infrared memory pixel can be driven by a near-infrared photosensitive voltage divider to convert a near-infrared signal into a non-volatile storage signal, and has the potential to be applied in the field of infrared detectors and image sensors for band selection.

Description

technical field [0001] The invention belongs to the field of materials, and relates to an anti-visible near-infrared memory pixel based on organic dyes. Background technique [0002] A photosensitive pixel is an electronic component that converts light radiation of a specific band into an electrical signal. Specifically, when incident light with a wavelength less than or equal to the semiconductor bandgap of the photosensitive layer irradiates the photosensitive pixel, the pixel will generate a conductance value that depends on the intensity of the incident light, thereby realizing the grayscale readout of the optical signal. Among various bands, near-infrared photosensitive pixels have attracted the most attention due to their wide range of band applications, and have been used in nighttime security systems, home appliance remote controls, blood oxygen analyzers, and the communication and control of popular wearable electronic devices. Especially for wearable electronic de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/30H01L51/05H01L51/30H01L51/42H01L51/46
CPCH10K39/32H10K85/113H10K85/625H10K10/462H10K30/451Y02E10/549
Inventor 刘云圻王翰林刘洪涛杨杰胡文平
Owner INST OF CHEM CHINESE ACAD OF SCI
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