A preparation method of a short-wave/medium-wave/long-wave three-band infrared detector
An infrared detector, three-band technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of incomplete replication of pre-set layer components and target components, low utilization rate of evaporation source materials, evaporation source pollution, etc. , to achieve the effects of suppressing generation-recombination dark current and tunneling dark current, reducing detection limit and improving performance
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Embodiment 1
[0041] In the embodiment of the present invention, the degassed N-type GaSb (001) substrate is transferred into the growth chamber to remove the oxide layer by raising the temperature. After the substrate temperature exceeds 370 ° C, the Sb protection beam is introduced, and the size of the Sb protection beam is at 10 -6 Torr level, real-time monitoring by REED, on the basis of the temperature 600°C when the deoxidation point appears on the substrate surface, increase 30°C, that is, 630°C, and deoxidize for 25 minutes.
[0042] In the embodiment of the present invention, the n-type doped GaSb buffer layer 2 is grown on the GaSb substrate 1 with a thickness of 1.1 μm. Among them, the Te doping concentration in the GaSb buffer layer is close to 2×10 18 cm -3 .
[0043] In the embodiment of the present invention, the n-type InAs / GaSb superlattice contact layer 3 is grown on the n-type doped GaSb buffer layer 2 with a thickness of 0.5 μm. This layer is composed of alternatel...
Embodiment 2
[0058] In the embodiment of the present invention, the degassed N-type GaSb (001) substrate is transferred into the growth chamber to remove the oxide layer by raising the temperature. After the substrate temperature exceeds 370 ° C, the Sb protection beam is introduced, and the size of the Sb protection beam is at 10 -6 Torr level, real-time monitoring by REED, on the basis of the temperature 600°C when the deoxidation point appears on the substrate surface, add 30°C, that is, 630°C, and deoxidize for 20 minutes.
[0059] In the embodiment of the present invention, the n-type doped GaSb buffer layer 2 is grown on the GaSb substrate 1 with a thickness of 0.92 μm. Among them, the Te doping concentration in the GaSb buffer layer is close to 2×10 18 cm -3 .
[0060] In the embodiment of the present invention, the n-type InAs / GaSb superlattice contact layer 3 is grown on the n-type doped GaSb buffer layer 2, and its thickness is 0.53 μm. This layer is composed of alternately...
Embodiment 3
[0075] In the embodiment of the present invention, the degassed N-type GaSb (001) substrate is transferred into the growth chamber to remove the oxide layer by raising the temperature. After the substrate temperature exceeds 370 ° C, the Sb protection beam is introduced, and the size of the Sb protection beam is at 10 -6 Torr level, real-time monitoring by REED, 30°C is added to the temperature of 600°C when the deoxidation point appears on the substrate surface, that is, 630°C, and deoxidation is performed for 22 minutes.
[0076] In the embodiment of the present invention, the n-type doped GaSb buffer layer 2 is grown on the GaSb substrate 1 with a thickness of 0.88 μm. Among them, the Te doping concentration in the GaSb buffer layer is close to 2×10 18 cm -3 .
[0077] In the embodiment of the present invention, the n-type InAs / GaSb superlattice contact layer 3 is grown on the n-type doped GaSb buffer layer 2 with a thickness of 0.5 μm. This layer consists of alternat...
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