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Wide-spectral pyroelectric detector absorption film system structure and preparation method thereof

A pyroelectric detector and film structure technology, which can be used in electrical radiation detectors, ion implantation plating, coatings, etc., can solve the problems of poor device process compatibility, hindering heat transmission, and low reflectivity of porous black gold. Achieve the effect of improving process compatibility, enhancing infrared absorption rate, and simplifying preparation process

Active Publication Date: 2017-06-20
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Black resin has a high infrared absorption rate, but it is not compatible with the device process, and has a large thermal resistance, which may hinder the transmission of heat to the sensitive film
Porous black gold has low reflectivity and high broad-spectrum absorption characteristics, but it has weak adhesion and breaks easily
In addition, some literatures reported that the sensitive material lithium tantalate (LiTaO 3 ) surface with a graded refractive index anti-reflection layer (A.Finn, etc., "Microstructured surfaces on LiTaO 3 -basedpyroelectric infrared detectors”, IEEE Sensors Journal, vol.11, pp.2204, 2011), based on the structure of the anti-reflection layer, the absorption rate is significantly improved, but this method changes the surface morphology of sensitive materials, which affects to a certain extent Response characteristics of the device to

Method used

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  • Wide-spectral pyroelectric detector absorption film system structure and preparation method thereof
  • Wide-spectral pyroelectric detector absorption film system structure and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0030] like figure 2 As shown, a wide-spectrum pyroelectric detector absorption film structure consists of three metal films with increasing porosity, which is based on LiTaO 3 The crystal flakes are spread out as the top layer of the pyroelectric sensitive unit 1 .

[0031] LiTaO 3 The preliminary preparation process of crystal flakes is as follows: in LiTaO 3 The lower electrode 5 is prepared on the wafer; the LiTaO is 3 The wafer 4 is thinned to form the pyroelectric sensitive unit 1 .

[0032] Cleaning LiTaO 3 Crystal flakes, lithographically patterned on the top surface. The bottom nickel-chromium alloy film was prepared by magnetron sputtering technology as the bottom metal film 2, the process pressure was adjusted to 4Pa, the sputtering current was 0.6A, and a dense nickel-chromium metal layer was obtained. The porosity range was controlled at 15%, and the thickness range was controlled at 10nm.

[0033] The intermediate layer metal film 3 is prepared by magnetr...

Embodiment 2

[0037] like figure 2 As shown, a wide-spectrum pyroelectric detector absorption film structure consists of three metal films with increasing porosity, which is based on LiTaO 3 The crystal flakes are spread out as the top layer of the pyroelectric sensitive unit 1 .

[0038] LiTaO 3 The preliminary preparation process of the crystal flakes is as follows: preparing the lower electrode 5 on the lithium tantalate wafer; thinning the lithium tantalate wafer by grinding and polishing to form the pyroelectric sensitive unit 1 .

[0039] Cleaning LiTaO 3 Crystal flakes, lithographically patterned on the top surface. The bottom metal film 2 is prepared by magnetron sputtering technology, which is a bismuth metal film. The process pressure is adjusted to 5Pa and the sputtering current is 0.7A to obtain a dense bismuth metal layer. The porosity range is controlled at 20%, and the thickness range is controlled at 10nm. .

[0040] The intermediate layer metal film 3 is prepared by m...

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Abstract

The invention discloses a wide-spectral pyroelectric detector absorption film system structure and a preparation method thereof and belongs to the pyroelectric detector infrared absorption layer field. With the wide-spectral pyroelectric detector absorption film system structure and the preparation method thereof of the invention adopted, the problem that a porous material can be only adopted as an absorption layer due to the poor adhesion of the porous material to a substrate. The film system structure is prepared on the top layer of a pyroelectric detector sensitive unit and includes three metal thin film layers, wherein the underlying metal thin film has low porosity and high density and can maintain good adhesion with a substrate, the intermediate metal thin film is adopted as a transition Layer and has increased porosity and reduced density, and the top metal thin film layer is adopted as a loose layer and can effectively enhance an infrared absorption rate. The prepared metal absorption layer can be used as an absorption layer and the upper electrode of a detector at the same time, and therefore, preparation techniques can be the greatly simplified, costs can be saved, process compatibility can be improved, and strong support can be provided for the development of a high-performance pyroelectric detector.

Description

technical field [0001] The invention relates to the technical field of infrared absorption layers of pyroelectric detectors, in particular to a wide-spectrum pyroelectric detector absorption film structure and a preparation method thereof. Background technique [0002] Pyroelectric detector is a kind of infrared radiation detection device, which is prepared by utilizing the characteristics of spontaneous polarization of pyroelectrics that change with temperature. Compared with other detectors, it not only maintains the advantages of thermal detectors operating in the room temperature band, but also can withstand large radiation power, has a high detection rate in a wide temperature and frequency range, and has a small time constant. Features. Pyroelectric detectors are widely used in the fields of national defense, industry, medicine and scientific research, such as intrusion alarm, security surveillance, fire alarm, industrial production monitoring, assisted driving of air...

Claims

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Application Information

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IPC IPC(8): G01J5/34C23C14/18C23C14/24C23C14/35
CPCC23C14/18C23C14/185C23C14/24C23C14/35G01J5/34
Inventor 于贺太惠玲黎威志杜晓松刘子骥
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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