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Defect reduction methods and composition for via formation in directed self-assembly patterning

A technology of hydrophobic polymers and block copolymers, applied in the fields of technology for producing decorative surface effects, decorative art, gaseous chemical plating, etc., can solve problems such as undiscussed defects

Inactive Publication Date: 2017-08-18
AZ ELECTRONICS MATERIALS LUXEMBOURG R L
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inherent drawbacks of the method and how to overcome it are not discussed in the background art

Method used

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  • Defect reduction methods and composition for via formation in directed self-assembly patterning
  • Defect reduction methods and composition for via formation in directed self-assembly patterning
  • Defect reduction methods and composition for via formation in directed self-assembly patterning

Examples

Experimental program
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Effect test

Embodiment 1

[0122] Synthesis Example 1: Synthesis of an azo initiator with phosphonate side groups

[0123] (1) 4,4'-Azobis(4-cyanovaleryl chloride) as a mixture of isomers: All procedures were performed under nitrogen atmosphere. Prepare 70 g of PCl in a round bottom flask with a mechanical stirrer 5 Suspension in about 240 ml of dichloromethane. To this suspension were added portionwise 9.1 g of 4,4'-azobis(4-cyanovaleric acid) within 25 minutes. The mixture was stirred at 0-2°C for 2 hours, then for 40 hours while heating to 16°C. Filter off excess phosphorus pentachloride solids using CH 2 Cl 2 (2x10ml) wash. The resulting solution was concentrated at room temperature using a rotary evaporator to obtain 115 g of a colorless liquid. The material was then placed in a -20°C freezer for 4 hours. The cold solution was poured into 200ml hexane with good stirring, the colorless solid was filtered and washed well with hexane. Yield: 7.3g (70.8%); m.p.75-77°C; 1 H NMR (CDCl 3 ,δppm) ...

Embodiment 2

[0126] Synthesis Example 2: Synthesis of Polystyrene Brush Precursors with Phosphonate End Groups

[0127] 1.7234 g (1.84 mmol) of the azo initiator prepared in Example 1 (3) above dissolved in 60 ml of 2-butanone was prepared in a 250 ml flask equipped with a magnetic stirrer, water condenser and gas bubbler , 44.779g (0.43mol) solution composed of styrene. Nitrogen was bubbled through the solution for 45 minutes, and the mixture was heated to 80° C. for 15.5 hours while stirring. The reaction mixture was cooled to room temperature and the solution was poured slowly into 1.8 L MeOH with stirring. The polymer was isolated by filtration, dried (60 °C) and purified by reprecipitation from 95 ml THF solution into 1.3 L methanol, washed with methanol and dried in a vacuum oven at 60 °C until a constant weight of 20.4 g, yield: 43.9%. Mn 23086g / mol; M w 40616 g / mol; PD 1.76. 1 H NMR (CDCl 3 ,δppm): 3.58-3.4(m,-CH 2 -N),4.18-3.98(m,CH 3 -C H 2 -O-P);

Embodiment 3

[0128] Synthesis Example 3: Synthesis of an azo initiator with hydroxyl side groups

[0129] (1) A solution of tetramethylammonium pentahydrate was prepared by dissolving 63 g of this material in (0.348 mol) 100 g of methanol. The solution was slowly added to a solution of 48.72 g (0.174 mol) of 4,4'-azobis(4-cyanovaleric acid) suspended in 100 g of methanol at a rate of addition with stirring so that the reaction temperature did not rise above 40 ℃. The reaction mixture was stirred for an additional hour after the addition was complete. After this time most of the methanol was stripped from the reaction mixture using a rotary evaporator at room temperature. The concentrated reaction mixture was then poured into a flask containing diethyl ether so an oily layer precipitated at the bottom of the flask. The supernatant ether was then decanted and an oily residue was retained. The residue was washed by adding more diethyl ether to the flask containing the oily residue with st...

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Abstract

The present invention relates to a two novel processes, "Dual Coating Process and Single Coating Process," for forming an array of via's by employing a graphoepitaxy approach, where an array of pillars the surface of the pillars has been modified by the formation of a hydrophobic poly(vinyl aryl) brush at the surface of the pillars. The present invention also relates to a composition comprising a poly(vinyl aryl) hydrophopic polymer brush precursor terminated at one chain end with a reactive functional group, a diblock copolymer comprising an etch resistant hydrophobic block and a highly etchable hydrophilic block, a thermal acid generator and a solvent.

Description

technical field [0001] The present invention relates to methods and compositions for reducing defects in vias formed by patterning formed by directed self-assembly of block copolymers (BCPs) to form arrays of vias from arrays of pillars. The method can be used in the manufacture of electronic devices. Background technique [0002] Directed self-assembly of block copolymers is a method used to create smaller and smaller patterned features to fabricate microelectronic devices, where critical dimensions (CD) of features on the order of nanometers can be achieved. Directed self-assembly methods are desirable for extending the resolution capabilities of microlithography. In conventional photolithography, ultraviolet (UV) radiation can be used to expose a photoresist layer coated on a substrate or layered substrate through a mask. Positive or negative photoresists may be used, and these may also contain refractory elements such as silicon to enable dry development using conventi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00031B81C2201/0149B81C1/00396C09D153/00H01J37/32009H01L21/3081
Inventor 洪圣恩松本直树秋山靖黑泽和则宫崎真治林观阳
Owner AZ ELECTRONICS MATERIALS LUXEMBOURG R L