A method for preparing self-supporting carbide-derived carbon nanowires
A carbide-derived carbon and nanowire technology, applied in carbides, carbon compounds, chemical instruments and methods, etc., can solve problems such as research reports on derivative carbons that have not yet been found, and achieve controllable nanowire content, high purity, and electrical conductivity. and improved mechanical properties
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Embodiment 1
[0027] The isotropic pitch-based carbon fibers treated at 2000°C are woven into carbon felts, and carbon felts of a certain size are used as the matrix, and Si and SiO 2 The mixture is silicon source, its molar ratio is 1:1, carbon black is used as external carbon source, and the molar ratio of Si element to C element of carbon source is 0.2:1. Lay the carbon felt, silicon source and carbon source in the graphite crucible according to the staggered arrangement of silicon source + carbon source + carbon felt + carbon source + silicon source, then put the crucible into a high-temperature carbonization furnace, under the protection of an inert atmosphere , heated at a heating rate of 10°C / min to a final temperature of 1400°C, kept at this temperature for 1 hour, and cooled to room temperature to obtain a self-supporting silicon carbide nanowire material based on carbon fiber felt.
[0028] in the attached figure 1 From the XRD pattern, it can be clearly seen that the prepared sa...
Embodiment 2
[0032] The mesophase pitch-based carbon fibers treated at 1000°C are woven into carbon felts, and carbon felts of a certain size are taken as the matrix, SiO is used as the silicon source, carbon nanotubes are used as the external carbon source, and the Si element and the C element of the carbon source The molar ratio is 1:1. Place the carbon felt above the silicon source and the carbon source without direct contact with each other and place them separately in the same graphite crucible, then put the crucible into a high-temperature carbonization furnace, and heat it at a heating rate of 10°C / min under the protection of an inert atmosphere The final temperature was 1600° C., kept at this temperature for 3 hours, and cooled to room temperature to obtain a self-supporting silicon carbide nanowire material based on carbon fiber felt. Subsequently, the above-mentioned silicon carbide nanowires were heated up to 1000°C under an inert atmosphere, and the inert gas was stopped and re...
Embodiment 3
[0034]Weave polyacrylonitrile-based fibers into cloth, and then process them at 2000°C to obtain polyacrylonitrile-based carbon fiber cloth. Take a certain size of carbon cloth as the matrix, use Si as the silicon source, and graphite as the external carbon source. Si element and The molar ratio of the C element of the carbon source is 1:4. Lay the carbon cloth, silicon source and carbon source in the ceramic crucible according to the staggered arrangement of silicon source + carbon source + carbon cloth + carbon source + silicon source, and then put the crucible into a high-temperature carbonization furnace, under the protection of an inert atmosphere , heated at a heating rate of 10°C / min to a final temperature of 1800°C, kept at this temperature for 2 hours, and cooled to room temperature to obtain a self-supporting silicon carbide nanowire material based on carbon fiber felt. Subsequently, the above-mentioned silicon carbide nanowires were heated to 1200°C under an inert a...
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