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HoSrMnZncodopedbismuth ferrateferroelectric film with stable ferroelectricity in high electric field and preparation method thereof

A ferroelectric thin film, high electric field technology, applied in the field of functional materials, to achieve the effects of stable ferroelectricity, uniform grain size, and improved breakdown resistance

Active Publication Date: 2017-09-08
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, there is no information about Bi with stable ferroelectricity under high electric field 0.89 Ho 0.08 Sr 0.03 Fe 0.95 mn 0.03 Zn 0.02 o 3 Related reports on ferroelectric thin films and their preparation methods

Method used

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  • HoSrMnZncodopedbismuth ferrateferroelectric film with stable ferroelectricity in high electric field and preparation method thereof
  • HoSrMnZncodopedbismuth ferrateferroelectric film with stable ferroelectricity in high electric field and preparation method thereof
  • HoSrMnZncodopedbismuth ferrateferroelectric film with stable ferroelectricity in high electric field and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Step 1: Use bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw materials (5% excess bismuth nitrate), and dissolve in ethylene dinitrate at a molar ratio of 0.94:0.08:0.03:0.95:0.03:0.02 In the mixed solution of alcohol methyl ether and acetic anhydride, obtain the stable precursor solution that the total concentration of metal ions is 0.3mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0029]Step 2: Place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning. After ultrasonic cleaning for 10 minutes each time, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into the oven to bake until dry, take it out and let it stand at room temperature. Then place the clean substrate in an ultraviolet light irradiator for 40 minutes to make the surface of the su...

Embodiment 2

[0037] Step 1: Use bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw materials (5% excess bismuth nitrate), and dissolve in ethylene dinitrate at a molar ratio of 0.94:0.08:0.03:0.95:0.03:0.02 In the mixed solution of alcohol methyl ether and acetic anhydride, obtain the stable precursor solution that the total concentration of metal ions is 0.2mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 2.5:1;

[0038] Step 2: Place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning. After ultrasonic cleaning for 10 minutes each time, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into the oven to bake until dry, take it out and let it stand at room temperature. Then place the clean substrate in an ultraviolet light irradiator for 40 minutes to make the surface of the...

Embodiment 3

[0041] Step 1: Use bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate as raw materials (5% excess bismuth nitrate), and dissolve in ethylene dinitrate at a molar ratio of 0.94:0.08:0.03:0.95:0.03:0.02 In the mixed solution of alcohol methyl ether and acetic anhydride, obtain the stable precursor solution that the total concentration of metal ions is 0.4mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3.5:1;

[0042] Step 2: Place the FTO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning. After ultrasonic cleaning for 10 minutes each time, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into the oven to bake until dry, take it out and let it stand at room temperature. Then place the clean substrate in an ultraviolet light irradiator for 40 minutes to make the surface of the...

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Abstract

The invention provides aHoSrMnZncodopedbismuth ferrateferroelectric film with stable ferroelectricity in high electric field, and a preparation method thereof. Bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate are taken as raw materials (bismuth nitrate is over capacity for 5 percent), ethylene glycol monomethyl ether and acetic anhydride are taken as solvents, and a Bi0.89Ho0.08 Sr0.03 Fe0.95Mn0.03Zn0.02O3 ferroelectric film with stable ferroelectricity in high electric field is prepared through a spin-coating method and a layer-by-layerannealing technology. The film adopts a sol-gel technology as well asthe spin-coating method and the layer-by-layerannealing method, is simple in equipment requirement, easy to realize experiment conditions, suitable for preparing films on large surfaces and surfaceswithirregularshapes, accurate and controllable in chemical components, and good in uniformity, and can effectivelyimprovethepenetration resistance and increasetheresidualpolarization value.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to preparing a HoSrMnZn co-doped bismuth ferrite ferroelectric thin film with stable ferroelectricity under high electric field on the surface of a functionalized FTO / glass substrate, specifically Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.95 mn 0.03 Zn 0.02 o 3 ferroelectric thin film. Background technique [0002] Ferroelectric materials have a spontaneous electrical polarization that can be reversed (switched) in response to an applied electric field. For ferroelectric thin films, the high electric field required for polarization reversal can be obtained at a relatively low voltage, which makes ferroelectric thin films integrated into modern electronic devices. Non-volatile ferroelectric random access memory, especially high-density ferroelectric memory devices have shown great application prospects in the commercial field. Access memory has the advantages of non-volatility and fast r...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622
CPCC04B35/453C04B35/62218C04B2235/3213C04B2235/3224C04B2235/3262C04B2235/3272C04B2235/3284C04B2235/662
Inventor 谈国强郭美佑杨玮刘云任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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