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Piezoresistance ceramic material and preparation method thereof

A ceramic material, varistor technology, applied in the direction of varistor, varistor core, etc., can solve the problems of poor mechanical properties, difficult reprocessing, strong brittleness, etc., to achieve absorption capacity and pulse impact resistance capacity The effect of strong, wave-absorbing ability and high-current impact resistance, and high toughness

Inactive Publication Date: 2017-09-29
HEFEI TONGYOU ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing varistors are ceramic varistors, which have the common disadvantages of ceramic materials, such as poor mechanical properties, strong brittleness, fragility, and difficulty in reprocessing.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A varistor ceramic material, comprising the following components by weight: 70 parts of zinc oxide ZnO, titanium dioxide TiO 2 6 parts, manganese dioxide MnO 2 5 parts, vanadium pentoxide V 2 o 5 4 parts, cobalt oxide Co 2 o 3 1.9 parts, chromium oxide Cr 2 o 3 1.7 parts, niobium pentoxide Nb 2 o 5 0.5 parts, strontium titanate SrTiO 3 1.2 parts, magnesium titanate Mg 2 TiO 4 1.5 parts, lithium carbonate Li 2 CO 3 0.2 parts.

[0026] The preparation method of the above-mentioned varistor ceramic material comprises the following steps:

[0027] (1) Weigh each component according to the weight part, mix and stir evenly, pass through a 100-200 mesh sieve, add an appropriate amount of water, put it into a 600r / min ball mill and mill it for 12 hours to make a slurry; the amount of water added is 1.5 times the total mass of the mixture.

[0028] (2) Dry the slurry at 150°C to a water content of 2-6%, put it into a kiln, and calcinate at 900°C for 3 hou...

Embodiment 2

[0034] A varistor ceramic material, comprising the following components by weight: 66 parts of zinc oxide ZnO, titanium dioxide TiO 2 6 parts, manganese dioxide MnO 2 3 parts, vanadium pentoxide V 2 o 5 4 parts, cobalt oxide Co 2 o 3 1.7 parts, chromium oxide Cr 2 o 3 1.5 parts, niobium pentoxide Nb 2 o 5 0.5 parts, strontium titanate SrTiO 3 0.9 parts, magnesium titanate Mg 2 TiO 4 1.3 parts, lithium carbonate Li 2 CO 3 0.2 parts.

[0035] The preparation method of the above-mentioned varistor ceramic material comprises the following steps:

[0036](1) Weigh each component according to the weight part, mix and stir evenly, pass through a 100-200 mesh sieve, add an appropriate amount of water, put it into a 600r / min ball mill and mill it for 12 hours to make a slurry; the amount of water added is 1.5 times the total mass of the mixture.

[0037] (2) Dry the slurry at 150°C to a water content of 2-6%, put it into a kiln, and calcinate at 900°C for 3 hour...

Embodiment 3

[0043] A varistor ceramic material, comprising the following components by weight: 70 parts of zinc oxide ZnO, titanium dioxide TiO 2 8 parts, manganese dioxide MnO 2 3 parts, vanadium pentoxide V 2 o 5 5 parts, cobalt oxide Co 2 o 3 2.3 parts, chromium oxide Cr 2 o 3 1.8 parts, niobium pentoxide Nb 2 o 5 0.6 parts, strontium titanate SrTiO 3 1.2 parts, magnesium titanate Mg 2 TiO 4 1.5 parts, lithium carbonate Li 2 CO 3 0.5 servings.

[0044] The preparation method of the above-mentioned varistor ceramic material comprises the following steps:

[0045] (1) Weigh each component according to the weight part, mix and stir evenly, pass through a 100-200 mesh sieve, add an appropriate amount of water, put it into a 600r / min ball mill and mill it for 12 hours to make a slurry; the amount of water added is 1.5 times the total mass of the mixture.

[0046] (2) Dry the slurry at 150°C to a water content of 2-6%, put it into a kiln, and calcinate at 900°C for 3 ...

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PUM

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Abstract

The invention discloses a piezoresistance ceramic material and a preparation method thereof. The ceramic material is prepared from the following components in parts by weight: 60 to 80 parts of zinc oxide ZnO, 5 to 10 parts of titanium dioxide TiO2, 3 to 6 parts of manganese dioxide MnO2, 3 to 6 parts of vanadium pentoxide V2O5, 1.5 to 2.8 parts of cobalt oxide Co2O3, 1.2 to 2.2 parts of chromium oxide Cr2O3, 0.3 to 0.8 part of niobium pentoxide Nb2O5, 0.6 to 1.8 parts of strontium titanate SrTiO3, 0.8 to 2.0 parts of magnesium titanate Mg2TiO4 and 0.1 to 0.6 part of lithium carbonate Li2CO3. The preparation method comprises the following steps: mixing and slurrying, calcining, carrying out ball milling and pressing, crushing and grinding. The ceramic material disclosed by the invention has strong absorption capability and pulse impact bearing capability and high toughness and is not easy to crush; the ceramic material has excellent reprocessing performance; the preparation method is simple and has low energy consumption so that the cost is reduced.

Description

technical field [0001] The invention relates to the field of varistor materials, in particular to a varistor ceramic material and a preparation method thereof. Background technique [0002] Zinc oxide varistor ceramics has become one of the most widely used and best performance varistor materials due to its high nonlinear coefficient, fast response speed, small leakage current, low residual voltage and low manufacturing cost. It is widely used in electric power , communications, transportation, integrated circuits, automotive electronics, medical equipment and household appliances and other fields. [0003] The existing varistor is mainly made of ZnO material, and its preparation method is to use ZnO powder as the main raw material, adding Bi 2 o 3 and other oxides such as Sb 2 o 3 、Co 2 o 3 etc., obtained through a high-temperature ceramic preparation process, the high-temperature ceramic sintering process temperature is 900°C to 1300°C, and the sintering time is more...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622H01C7/108H01C7/112H01C7/115
CPCC04B35/453C04B35/622C04B2235/3203C04B2235/3232C04B2235/3234C04B2235/3236C04B2235/3239C04B2235/3241C04B2235/3251C04B2235/3267C04B2235/3275C04B2235/5463C04B2235/602C04B2235/606C04B2235/656C04B2235/6567H01C7/108H01C7/112H01C7/115
Inventor 李丹丹
Owner HEFEI TONGYOU ELECTRONICS TECH CO LTD