Preparation method of low-internal stress and high-hardness DLC/a-CNx nano multilayer film

Abstract

The invention discloses a preparation method of a low-internal stress and high-hardness DLC / a-CNx nano multilayer film. The method comprises the steps that (1) a monocrystalline silicon wafer matrix is put into a hydrofluoric acid solution to be cleaned, the monocrystalline silicon wafer matrix is cleaned with acetone and absolute ethyl alcohol, the surface is clean, and roughness is not higher than Ra 0.1; (2) a graphite target and the pretreated monocrystalline silicon wafer matrix are put into a multi-target magnetron sputtering deposition chamber, the target-matrix distance is adjusted to be 60 mm to 80 mm, air pressure in the deposition chamber is adjusted to be (1.5 * 10<-3>) Pa or below, and the temperature of the matrix is adjusted to be 100 DEG C to 250 DEG C; and (3) periodic retention time of the matrix on the graphite target is controlled, DLC films and a-CNx films with certain thicknesses are alternately deposited on the surface of the matrix layer by layer in alternately switched deposition atmospheres, a nano multilayer structure of which the bottommost layer is the DLC film and the uppermost layer is the a-CNx film is obtained, and after cooling, the DLC / a-CNx nano multilayer film is obtained. According to the preparation method, good combination of the DLC films and the a-CNx films, reduction of film internal stress and a strong interface strengthening effect are achieved, and the nano multilayer film with excellent performance is obtained.

Description

technical field [0001] The invention relates to a preparation method of magnetron sputtering wear-resistant thin film material, especially a method based on diamond-like carbon (DLC) and amorphous carbon nitride (a-CN x ) composed of nanometer multilayer films, belonging to the field of material friction and wear. Background technique [0002] The performance of DLC film depends heavily on the preparation technology, and most of its hardness is distributed in the range of 12-50GPa. Due to its high hardness, low friction coefficient in the atmosphere and good wear resistance, it can be used in machinery, electronics, medical, aerospace and other fields. At present, the methods for preparing DLC ​​films mainly include pulsed laser deposition, chemical vapor deposition, and magnetron sputtering deposition. DLC films by pulsed laser deposition and chemical vapor deposition usually have a high degree of densification, sp 3 With high C content, it has high hardness; while the D...

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Problems solved by technology

[0004] In summary, the residual stress of the DLC film prepared by the transition layer method is still close to 1GPa, and the preparation process is relatively complicated, so it is necessary to find a more suitable transition layer; and the DLC film prepared by the doping method, element doping The internal stress of the film is significantly reduced, but the internal stress is still relatively high, the hardness and wear resistance are often significantly reduced, and most of the element doping has harsh process conditions, complicated preparation process, and high cost, which is not conducive to practical application.

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