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Vertical photoelectric detector and preparation method thereof

A photodetector, vertical technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as interface defects, high dark current of photodetectors, limitations, etc., to achieve reduced concentration, low production cost, and long service life Effect

Active Publication Date: 2017-12-01
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, problems such as interface defects will inevitably be introduced in the preparation process of this kind of material, which makes the material have a high background carrier concentration at zero gate voltage, which in turn leads to a high dark current of the photodetector. These problems limit Its application in the field of photoelectric detection

Method used

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  • Vertical photoelectric detector and preparation method thereof
  • Vertical photoelectric detector and preparation method thereof
  • Vertical photoelectric detector and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0037] See figure 1 , Figure 4 with Figure 5 , figure 1 Is a flow chart of a method for manufacturing a vertical photodetector provided by an embodiment of the present invention; Figure 4 Is a Raman scattering pattern of molybdenum disulfide provided by an embodiment of the present invention; Figure 5 This is a photoluminescence pattern of a hybrid perovskite provided by an embodiment of the present invention.

[0038] The method includes the following steps:

[0039] S1: Select the substrate;

[0040] S2: growing a bottom electrode layer on the substrate;

[0041] S3: growing a molybdenum disulfide layer on the bottom electrode layer;

[0042] S4: growing a hybrid perovskite layer on the molybdenum disulfide layer;

[0043] S5: Growing a top electrode on the hybrid perovskite layer.

[0044] Wherein, the substrate is a semi-insulating and semi-transparent material.

[0045] Preferably, the substrate material is sapphire.

[0046] Wherein, before step (S1), it further includes: using th...

Embodiment 2

[0072] See Figure 2a~Figure 2e , Figure 2a~Figure 2e It is a schematic diagram of a process flow of a vertical photodetector provided by an embodiment of the present invention. The method includes the following steps:

[0073] Step 1. Select the sapphire substrate 201, such as Figure 2a Shown.

[0074] Step 2. Deposit a first metal material on the surface of the sapphire substrate 201 to form a bottom electrode layer 202, such as Figure 2b Shown.

[0075] Step 3. On the surface of the bottom electrode layer 202, a molybdenum disulfide layer 203, that is, the light absorbing layer 1, is formed, such as Figure 2c Shown.

[0076] Step 4. A hybrid perovskite layer 204, that is, a light absorption layer 2, is formed on the surface of the molybdenum disulfide layer 203, such as Figure 2d Shown.

[0077] Step 6. Deposit a second metal material on the upper surface of the hybrid perovskite layer 204 to form a top electrode 205 and an external circuit, such as Figure 2e Shown.

[0078] A...

Embodiment 3

[0103] See again Figure 2a~Figure 2e , Figure 2a~Figure 2e It is a schematic diagram of a process flow of a vertical photodetector provided by an embodiment of the present invention. The method includes the following steps:

[0104] S01: Cleaning of substrate 201: Put the semi-insulating semi-transparent sapphire substrate 201 in acetone, ethanol and deionized water for ultrasonic cleaning and vacuum drying, such as Figure 2a Shown.

[0105] S02: Place target and substrate 201: Fix the sapphire substrate 201 cleaned in step 1 on the sample tray, put it into the vacuum chamber, place the ITO target at the target position of the RF magnetron sputtering system, and start Vacuum.

[0106] S03: Deposit ITO bottom electrode layer 202: First vacuum the cavity (5×10 -6 Pa), heating the sapphire substrate 201 and adjusting the pressure in the cavity: the distance between the ITO target and the sapphire substrate 201 is 10 cm, the sputtering power is 50W, and the deposition time is 0.5h-1h...

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Abstract

The present invention relates to a preparation method of a vertical photoelectric detector. The method comprises: S1, selecting a substrate; S2, growing a bottom electrode layer on the substrate; S3: growing a molybdenum disulfide layer on the bottom electrode layer; S4: growing a hybrid perovskite layer on the molybdenum disulfide layer; and S5: growing a top electrode on the hybrid perovskite layer. The vertical photoelectric detector and the preparation method thereof can allow the background carrier of the photoelectric detector two-dimensional material channel to be completely exhausted so as to substantially reduce the dark current of the device and improve the detection performance of the device in the weak light; the preparation technology is simple, the production cost is low, an expensive instrument device is not needed; the prepared photoelectric detector can be operated under zero grid voltage and low source-drain-bias, low power consumption features are good, the structure is simple, the efficiency is high, the response is fast, the work is stable and the service life is long.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor photodetection, and specifically relates to a vertical photodetector and a preparation method thereof. Background technique [0002] Two-dimensional materials represented by graphene and two-dimensional transition metal chalcogenides have received more and more attention in the field of photoelectric detection. Among them, the transition metal sulfide two-dimensional material represented by molybdenum disulfide (molybdenum disulfide) has a band gap close to that of traditional semiconductor materials such as silicon and gallium arsenide, and the band gap changes with the thickness. The new photoelectric detection field has broad application prospects. However, this type of material will inevitably introduce problems such as interface defects during the preparation process, which makes the material have a higher background carrier concentration under zero gate voltage, which in turn makes the dar...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/18
CPCH01L31/109H01L31/1876Y02P70/50
Inventor 贾仁需庞体强栾苏珍张玉明汪钰成刘银涛
Owner XIDIAN UNIV