Hard thin film and preparation method thereof

A thin film and hard technology, applied in the field of hard thin film and its preparation, can solve the problems of large surface roughness of the thin film, easy peeling off of the thin film, and limited application, so as to improve the tribological performance, enhance the wear resistance and prolong the lubrication time Effect

Inactive Publication Date: 2018-01-05
CHANGZHOU C PE PHOTO ELECTRICITY SCI & TECHN
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention: the thin film / substrate bonding force is too small to cause the film to fall off easily, the arc ion plating film contains "large particle" pollution, and the deposited film has a relatively large surface roughness, which limits its application to high surface quality requirements. In order to solve problems such as application in the field, a kind of hard film and its preparation method are provided

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hard thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0023] Take 30mm×20mm×1mm cemented carbide, grind and polish it with sandpaper, put it in acetone and ultrasonically clean it for 15 minutes, then soak it in absolute ethanol, and clean it with 300W ultrasonic wave for 15 minutes, take it out and dry it, and put it in a nitriding furnace. And evacuate to the pressure of 10Pa in the furnace, then heat to 240 ° C, and pass nitrogen gas at 50 mL / min, under the voltage of 300 V, nitriding treatment for 2 hours, after cooling to room temperature, the pretreated cemented carbide is obtained. The quality alloy is placed in a compound ion coating machine, and the vacuum degree of the coating chamber is controlled to be 2×10 -3 Pa, and then inject high-purity nitrogen gas to the vacuum chamber to 0.6Pa, and control the arc current to 50A, the substrate temperature to 200°C, and the substrate DC negative bias amplitude to 600V. + The glow discharge effect is used for sputtering cleaning, and then the DC negative bias voltage amplitude o...

example 2

[0025] Take 30mm×20mm×1mm cemented carbide, grind and polish it with sandpaper, put it in acetone and ultrasonically clean it for 18 minutes, then soak it in absolute ethanol, and use 300W ultrasonic wave to clean it for 18 minutes, take it out and dry it, and put it in a nitriding furnace. And evacuated to the furnace pressure of 50Pa, then heated to 270 ° C, and nitrogen gas was introduced at 50 mL / min, and the nitriding treatment was carried out at 500 V for 2 hours. After cooling to room temperature, the pretreated cemented carbide was obtained. The quality alloy is placed in a compound ion coating machine, and the vacuum degree of the coating chamber is controlled to be 2×10 -3 Pa, and then feed high-purity nitrogen to the vacuum chamber to 0.7Pa, and control the arc current to 55A, the substrate temperature to 220°C, and the substrate DC negative bias amplitude to 700V. +The glow discharge effect is used for sputtering cleaning, and then the DC negative bias voltage ampl...

example 3

[0027] Take 30mm×20mm×1mm cemented carbide, grind and polish it with sandpaper, put it in acetone and ultrasonically clean it for 20 minutes, then soak it in absolute ethanol, and clean it with 300W ultrasonic wave for 20 minutes, take it out and dry it, then place it in a nitriding furnace. And evacuate to the pressure of 100Pa in the furnace, then heat to 300°C, and pass nitrogen gas at 50mL / min, nitriding treatment at 600V for 3 hours, and cool to room temperature to obtain pretreated cemented carbide. The quality alloy is placed in a compound ion coating machine, and the vacuum degree of the coating chamber is controlled to be 2×10 -3 Pa, and then feed high-purity nitrogen gas to the vacuum chamber to 0.8Pa, and control the arc current to 60A, the substrate temperature to 240°C, and the substrate DC negative bias amplitude to 800V. + The glow discharge effect is used for sputtering cleaning, and then the DC negative bias voltage amplitude of the substrate is reduced to 300...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a hard thin film and a preparation method thereof and belongs to the technical field of coating. By adoption of the physical vapor deposition technology and the ionic nitriding technology, a nitride layer and a W / Mo-doped multi-element compound CrTiAlN hard thin film are formed on the surface of a hard alloy, the surface of the thin film is smooth and flat, the thin film grows in a columnar crystal mode, the texture structure is compact, no obvious defect exists, the area, close to a substrate, of the fracture of the thin film is of an obvious fine crystal structure, the growth direction of the thin film is slightly oblique by means of nitriding treatment and shows predominant crystal orientation to a certain extent, and the abrasion resistance and the bonding strength with the substrate of the CrTiAlN thin film are improved; and meanwhile the thin film is more compact after nitriding is completed, as the element compositions of the thin film show gradient change, continuous transition of the physical and chemical performance and the texture structure of the film layer is achieved, the stress condition of an interface can be relieved, and the abrasion resistance is enhanced.

Description

technical field [0001] The invention relates to a hard film and a preparation method thereof, belonging to the technical field of coating. Background technique [0002] The hard film can significantly improve the cutting performance of the tool and the wear resistance of the tool, increase its service life and increase the aesthetics of the product. It is widely used in the cutting industry, mold industry, automobile manufacturing, machinery manufacturing, textile industry, geological drilling and aerospace and other fields. In the machinery manufacturing industry, there are casting, forging, welding, turning, milling, planing, grinding, boring and other parts forming processes, but most of the mechanical parts still need to be made by cutting. In addition, in order to reduce product costs, improve product quality and production efficiency, countries all over the world are widely using mold forming technology. According to statistics, 60% to 80% of parts in the manufacturin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/02C23C8/24
Inventor 张军王之霖陈倩
Owner CHANGZHOU C PE PHOTO ELECTRICITY SCI & TECHN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap