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Spatial limiting solvent assisted growth method for preparing organic-inorganic composite semiconductor monocrystalline film

An inorganic composite, single crystal thin film technology, applied in the direction of single crystal growth, crystal growth, semiconductor devices, etc., can solve the problems of difficult transportation in the grain boundary region, easy to damage the film and substrate, and unfavorable film crystal quality, etc. Achieve the effect of avoiding short circuit problems of devices, improving flatness, and improving and reducing roughness

Active Publication Date: 2018-01-26
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method also has relatively prominent shortcomings: relatively complex equipment, anisotropic pressure not only easily destroys the film and substrate, but also easily causes complex residual stress in the film, which is not conducive to improving the crystallization quality of the film
In addition, due to the lack of a liquid environment, the transport of the grain boundary region is difficult, and the interface connectivity between the grains is poor (the grain boundary region is mainly composed of amorphous state), which is not conducive to carrier transport.

Method used

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  • Spatial limiting solvent assisted growth method for preparing organic-inorganic composite semiconductor monocrystalline film
  • Spatial limiting solvent assisted growth method for preparing organic-inorganic composite semiconductor monocrystalline film
  • Spatial limiting solvent assisted growth method for preparing organic-inorganic composite semiconductor monocrystalline film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Embodiment 1: A method for preparing an organic-inorganic composite semiconductor single crystal thin film with space-limited solvent-assisted growth, comprising the following steps:

[0055] (1) The CH prepared by conventional spin-coating method 3 NH 3 PB 3 The compound semiconductor polycrystalline film is placed in a closed container filled with cyclohexane saturated vapor for 0.5 hours, so that the film as a whole can evenly absorb solvent vapor;

[0056] (2) Closely attach the polished silicon wafer with a clean surface to the surface of the film, and then cover and seal them with a polytetrafluoroethylene film;

[0057] (3) Place the above-mentioned sealed sample in a high-pressure autoclave, then fill the high-pressure autoclave with dimethyl silicone oil, and seal it;

[0058] (4) Apply a constant high pressure of 200MPa on the autoclave, then raise the temperature of the autoclave to 120°C and keep it constant for 48 hours;

[0059] (5) After the above-men...

Embodiment 2

[0072]Example 2: A space-limited solvent-assisted growth method for preparing an organic-inorganic compound semiconductor single crystal thin film. The operation steps are the same as in Example 1, except that the solvent cyclohexane used is replaced by isopropanol. The time for the crystal film to absorb solvent vapor is 1 hour, the polished cover is replaced by a polished quartz plate, the heat and pressure medium is ethylene glycol, the hot pressing pressure is 200 MPa, the hot pressing temperature is 200 °C, and the hot pressing treatment time is For 10 hours, the cooling rate was 0.06°C / min.

Embodiment 3

[0073] Example 3: A space-limited solvent-assisted growth method for preparing an organic-inorganic compound semiconductor single crystal thin film. The operation steps are the same as in Example 1, except that the compound semiconductor is replaced by CH 3 NH 3 PB 3-X Cl X , the solvent cyclohexane used was replaced by DMF, the time for the polycrystalline film to absorb solvent vapor was 0.1 hour, the polished cover slip was changed to a gallium arsenide single wafer, the flexible film used to cover the sample was gold foil, and the heat and pressure transfer medium was For fluorinated liquid, the heat treatment pressure is 150MPa, the hot pressing temperature is 100°C, the heat treatment time is 50 hours, and the cooling rate is 0.2°C / min.

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Abstract

The invention relates to a spatial limiting solvent assisted growth method for preparing an organic-inorganic composite semiconductor monocrystalline film. The method includes: firstly, adsorbing a certain amount of solvent vapor by an organic-inorganic composite semiconductor polycrystalline film, placing a polished cover plate on the surface of the film, encapsulating the polycrystalline film and the cover plate together through a flexible film and putting the encapsulated polycrystalline film and the cover plate in an autoclave, filling in the autoclave with liquid-state pressure transmission and heat transfer media, then sealing the autoclave, and starting heating after applying a high pressure to the autoclave; and after a certain time of constant-temperature and constant-pressure processing, gradually cooling the autoclave to a room temperature, and slowly removing the pressure to obtain the organic-inorganic composite semiconductor monocrystalline film formed by grains with large dimension and high crystallinity and having good grain boundary combination. The prepared organic-inorganic composite semiconductor monocrystalline film can be used for developing semiconductor photoelectric function devices including high-performance solar cells, electroluminescent devices, and photosensitive detectors etc., and important application values are achieved in the fields of the newenergy technology, the manufacture of display devices, and automatic control.

Description

technical field [0001] The invention relates to a space-limited solvent-assisted growth method for preparing an organic-inorganic compound semiconductor single crystal thin film, which belongs to the technical field of new materials. Background technique [0002] Organic-inorganic compound semiconductors have the high stability, high carrier mobility, high photoelectric conversion efficiency, wide-range adjustable band gap of inorganic semiconductors and the low cost, good processing performance, rich structure and performance of organic semiconductors. The advantages of diverse and strong light absorption ability have attracted a lot of attention in recent years. So far, organic-inorganic compound semiconductor materials have been widely used in high-performance photovoltaic devices, light-emitting devices, photodetector devices, field-effect devices and various sensor devices. On the other hand, a large number of research results show that in order to obtain a compound se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00C30B7/06H10K99/00
Inventor 廉刚付现伟董宁吕松赵天宇王琪珑崔得良
Owner SHANDONG UNIV