Method for preparing lithium battery energy storage material by using silicon wafer cutting waste and lithium battery
A technology for cutting silicon wafers and energy storage materials, applied in battery electrodes, nanotechnology for materials and surface science, secondary batteries, etc., can solve the problem of low added value and underutilization of cut silicon powder submicron and micron Advantages and other issues, to achieve good expansion and recovery, buffer volume shrinkage changes, improve the effect of bulk density
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Embodiment 1
[0045] Step 1. After ultrasonically dispersing 1000 g of polycrystalline silicon wafer cutting waste obtained by using the mortar cutting process (wire diameter 120 microns, SiC abrasive 10-20 microns) through absolute ethanol, use a bag-type precision filter device to separate submicron and micron silicon particles Separation, with a separation accuracy of 1 micron, to obtain submicron silicon filtrate A and 680 g of precipitate B;
[0046] Add 10g of organosilane coupling agent γ-aminopropyltriethoxysilane KH550 to filtrate A for ultrasonic dispersion, graft the surface of submicron silicon at 40°C for 2 hours, and evaporate the solvent to obtain 150g of submicron silicon ;
[0047] Precipitate B is a large particle of cutting wear non-silicon impurities and silicon with a large particle size. Disperse B in a solution with a concentration of 20% NaOH, and hydrolyze the large particle of silicon into a saturated polysilicate sodium salt solution at 70°C After filtering, the ...
Embodiment 2
[0051] Step 1. Ultrasonically disperse 800g of polycrystalline silicon wafer cutting waste obtained by using the mortar cutting process (wire diameter 140 microns, SiC abrasive 10-20 microns) through absolute ethanol, and use a stainless steel plate and frame precision filter device to filter out submicron and micron silicon particles The separation accuracy is 1 micron, and the submicron silicon filtrate A and 490g precipitate B are obtained;
[0052] Add 15g of organosilane coupling agent γ-(methacryloyloxy)propyltrimethoxysilane KH570 to the filtrate A for ultrasonic dispersion, graft the submicron silicon surface at 50°C for 1 hour, and evaporate the solvent to obtain 230g of submicron silicon;
[0053] Precipitate B is a cutting wear non-silicon impurity with large particles and silicon with a large particle size. Disperse B in a solution of 10% NaOH concentration, and let the large particle silicon hydrolyze into a saturated polysilicate sodium salt solution at 80°C Aft...
Embodiment 3
[0057] Step 1. After 500g of monocrystalline silicon wafer cutting waste obtained by diamond wire cutting process (wire diameter 100 microns, diamond particles 8-16 microns) is ultrasonically dispersed in isopropanol, use a stacked precision filter device for submicron and micron Separation of silicon particles, the separation accuracy is 1 micron, and submicron silicon filtrate A and 280g of precipitate B are obtained;
[0058] Add 15g of organosilane coupling agent γ-glycidyl ether propyltrimethoxysilane KH560 to filtrate A for ultrasonic dispersion, graft the surface of submicron silicon at 50°C for 1 hour, and evaporate the solvent to obtain 200g submicron micron silicon;
[0059] Precipitate B is a cutting wear non-silicon impurity with large particles and silicon with a large particle size. Disperse B in a solution of 15% KOH concentration, and let the large particle silicon hydrolyze into a saturated polysilicate potassium salt solution at 80°C After filtering, the fil...
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