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Preparation method of ternary zinc sulfide manganese nanowire

A technology of nanowires and zinc sulfide, applied in the field of preparation of new ternary zinc manganese sulfide nanowires, can solve the problems of uneven size of ZnS nanowires, narrow doping amount modulation range, low manganese doping amount, etc. Conducive to mass production and industrialization, excellent product quality and uniform composition

Active Publication Date: 2018-02-23
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problems of inhomogeneous size, uneven doping, low manganese doping amount and narrow doping amount modulation range of manganese-doped ZnS nanowires in the background technology are solved, and the present invention provides a uniform size, uniform composition, Preparation method of ternary zinc-manganese sulfide nanowires with high and adjustable manganese doping

Method used

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  • Preparation method of ternary zinc sulfide manganese nanowire

Examples

Experimental program
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Embodiment 1

[0030] Preparation of ternary ZnMnS nanowires

[0031] (1) In a flask with a vacuum stopper, add 15 mL of dodecanethiol, 15 mL of dodecylamine, 0.705 g of zinc dibutyldithiocarbamate (Zn(ddtc) 2 ) precursor, 0.690 g of manganese dibutyldithiocarbamate (Mn(ddtc) 2 ) precursor, and 20 mg silver sulfide nanoparticle catalyst;

[0032] (2) Stir evenly, vacuumize, and the vacuum condition is 0.003 MPa; and quickly raise the temperature to 120 °C, and react for 10 min; the product is washed 5 times with methanol and cyclohexane, and dried to obtain ternary zinc-manganese sulfide nanowires.

[0033] Depend on figure 1 It can be seen that the composition of the product is uniform, and no other phases appear in the XRD spectrum of the product. The XRD characteristic diffraction peak of the product is between the standard ZnS and MnS phase characteristic diffraction peaks, which is Zn x mn 1-x For the S phase, x=0.47 can be calculated by Vegard's theorem.

[0034] Depend on figu...

Embodiment 2

[0037] Preparation of ternary ZnMnS nanowires with other compositions

[0038] (1) In a flask with a vacuum stopper, add 15 mL of dodecanethiol, 15 mL of dodecylamine, 1.125 g of zinc dibutyldithiocarbamate (Zn(ddtc) 2 ) precursor, 0.135 g of manganese dibutyldithiocarbamate (Mn(ddtc) 2 ) precursor, and 20 mg silver sulfide (Ag 2 S) nanoparticle catalysts;

[0039] (2) Stir evenly, vacuumize, and then pass through argon (Ar) protection; quickly heat up to 120°C, react for 5 minutes; wash the product with methanol and cyclohexane for 5 times, and dry to obtain ternary zinc manganese sulfide Nanowires.

[0040] Depend on Figure 5 It can be seen that the product composition x=0.26, and the manganese doping amount is 26%.

Embodiment 3

[0042] Preparation of ternary ZnMnS nanowires with other compositions

[0043] (1) In a flask with a vacuum stopper, add 15 mL of dodecanethiol, 15 mL of dodecylamine, 0.570 g of zinc dibutyldithiocarbamate (Zn(ddtc) 2 ) precursor, 0.825 g of manganese dibutyldithiocarbamate (Mn(ddtc) 2 ) precursor, and 20 mg silver sulfide (Ag 2 S) nanoparticle catalysts;

[0044] (2) Stir evenly, vacuumize, and then pass Ar protection; quickly heat up to 120 °C, and react for 5 min; the product is washed with methanol and cyclohexane for 5 times, and dried to obtain ternary zinc-manganese sulfide nanowires.

[0045] Depend on Figure 5 It can be seen that the product composition x=0.69, and the manganese doping amount is 69%.

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Abstract

The invention relates to a preparation method of a ternary zinc sulfide manganese nanowire. The doping amount of manganese is 26 to 84 percent, the nanowire is uniform in size, the diameter is 6.9+ / -1.2 nm and the manganese is doped uniformly; the structural general formula of the ternary zinc sulfide manganese is ZnxMn1-xS, and the numerical range of the subscript x is 0.26 to 0.84; and the ternary zinc sulfide manganese nanowire serves as a magnetic material and is applied to magnetic devices, or serves as a light-emitting material and is applied to photoelectric devices. The preparation method particularly comprises the following steps: adding a silver sulfide (Ag2S) nanoparticle catalyst, zinc dibutyl dithiocarbamate (Zn(ddtc)2) and manganese dibutyl dithiocarbamate (Mn(ddtc)2) into amixed solvent; stirring uniformly, heating to 120 to 140 DEG C under the inert gas protection or vacuum conditions, and performing heat preservation for 5 to 15 minutes to obtain the ternary zinc sulfide manganese nanowire. The raw materials adopted by the process are common simple raw materials, the cost is low, the process controllability is high, the quality of products is high, and batched production and industrialization of the ternary zinc sulfide manganese nanowire are benefited.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a preparation method of a novel ternary zinc-manganese sulfide nanowire with uniform size, uniform composition, high manganese doping amount and controllability. Background technique [0002] In the field of nanomaterials, manganese-based ternary metal sulfides have rich and unique physical and chemical properties, such as characteristic yellow fluorescence emission and light-induced magnetization, etc., and can be used in many fields such as optics, optoelectronics, magnetism and biomedicine. field. Among them, one-dimensional manganese-based ternary metal sulfide nanostructures are an extremely important class of semiconductor nanomaterials, such as manganese-doped zinc sulfide (ZnS) nanowires, because of their large aspect ratio, high specific surface area and quantum Due to the size effect, it has more unique and excellent optical, electrical and...

Claims

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Application Information

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IPC IPC(8): C01G45/00B82Y30/00B82Y40/00
Inventor 蔡婧朱可夫王盛
Owner HEFEI UNIV OF TECH
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