Negative capacitance-based surrounding gate field effect transistor and manufacturing method thereof

Abstract

The invention provides a negative capacitance-based surrounding gate field effect transistor and a manufacturing method thereof. A ferroelectric material layer is formed between a high-K dielectric layer and a metal gate layer of a gate region structure of the negative capacitance-based surrounding gate field effect transistor; and the ferroelectric material layer has negative capacitance. The ferroelectric material layer with negative capacitance is used as a built-in voltage amplifier, so that the subthreshold range of oscillation of the device can be lowered to be 60mV / decade or below. Thetransistor adopts Si nanowires as a channel material, and the high-K metal gate fully surrounds the Si nanowires, so that higher gate control capability can be obtained and a short channel effect canbe avoided. The manufacturing method of the negative capacitance-based surrounding gate field effect transistor is simple in manufacturing process, and lowering of production cost can be facilitated.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a ring gate field effect transistor based on negative capacitance and a manufacturing method thereof. Background technique [0002] Conventional FETs require at least a 60mV change in gate voltage at 300K to produce a 10-fold (an order of magnitude) change in current. The minimum subthreshold slope determines the basic lower operating voltage. [0003] figure 1 A schematic diagram of the structure of an existing field effect transistor is shown in , where S represents the source region, D represents the drain region, Channel represents the channel region, oxide represents the gate oxide layer, G represents the gate, and V gs represents the gate-source voltage, V ds represents the source-drain voltage, t ox Represents the thickness of the gate oxide layer. [0004] figure 2 show figure 1 Longitudinal circuit schematic diagram of the structure shown, where C ox rep...

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Problems solved by technology

[0013] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a negative capacitance-based gate-all-round field effect transistor and its manufacturing method, which are used to solve the problem of high subthreshold swing and manufacturing process of field effect transistors in the prior art. complicated question

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