Ultraviolet light polymerization hybrid system imprinting resist for large-area nanoimprint

A technology of nanoimprinting and imprinting glue, which is applied in the field of imprinting materials, can solve the problems of curing speed, mold release effect, adhesion, volume shrinkage and environmental adaptability that cannot meet the technical requirements of large-area nanoimprinting process at the same time. Solve problems such as single printing performance and poor substrate adhesion effect, to achieve the effect of increasing curing rate, simplifying equipment structure and operation, and easy demoulding

Pending Publication Date: 2018-04-24
QINGDAO TECHNOLOGICAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the technical problems existing in the above-mentioned prior art, the purpose of the present invention is to provide a UV-curable hybrid system imprinting adhesive for large-area nanoimprinting to solve the problem of traditional imprinting in the large-area nanoimprinting manufacturing process. The performance of printing rubber is single, and the comprehensive performance of curing speed, mold release effect, adhesion to substrate, volume shrinkage and environmental ad

Method used

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  • Ultraviolet light polymerization hybrid system imprinting resist for large-area nanoimprint

Examples

Experimental program
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Example Embodiment

[0039] Example 1

[0040] An embossing glue is provided, consisting of the following components by weight:

[0041] 50 parts of 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexyl carboxylate, 10 parts of bisphenol A epoxy acrylate, 30 parts of triethylene glycol divinyl ether, triarylsulfonium salt 6 parts, 1 part of 1-hydroxycyclohexyl phenyl ketone, 1 part of silicone or silicon polyether defoamer, 2 parts of organosilane leveling agent.

[0042] First select triaryl sulfonium salt as photoinitiator, photoinitiator is 6 parts, then select 30 parts of triethylene glycol divinyl ether, place photoinitiator triarylsulfonium salt in constant pressure funnel at a certain speed Add dropwise in triethylene glycol divinyl ether, then add 1 part of 1-hydroxycyclohexyl phenyl ketone, and start the stirrer to stir at a high speed, and form a uniform solution I after 30 minutes; then choose 50 parts of 3 , 4-epoxycyclohexylmethyl-3,4-epoxycyclohexyl carboxylate and 10 parts of bisphenol A ...

Example Embodiment

[0043] Example 2

[0044] An embossing glue is provided, consisting of the following components by weight:

[0045] 40 parts of diglycidyl tetrahydrophthalate, 10 parts of bisphenol A epoxy acrylate, 40 parts of triethylene glycol divinyl ether, 6 parts of triarylsulfonium salt, 1-hydroxycyclohexylphenyl methyl 1 part of ketone, 1 part of silicone or polyether defoamer, 2 parts of organic silane leveling agent.

[0046] First choose triaryl sulfonium salt as photoinitiator, photoinitiator is 6 parts, then choose 40 parts of triethylene glycol divinyl ether, photoinitiator triaryl sulfonium salt is placed in constant pressure funnel at a certain speed Add dropwise in triethylene glycol divinyl ether, then add 1 part of 1-hydroxycyclohexyl phenyl ketone, and start the stirrer to stir at a high speed at the same time, and form a uniform solution I after 30 minutes; then select 40 parts of four Diglycidyl hydrogen phthalate and 10 parts of bisphenol A epoxy acrylate were added t...

Example Embodiment

[0047] Example 3

[0048] An embossing glue is provided, consisting of the following components by weight:

[0049] 36 parts of 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexyl carboxylate, 12 parts of bisphenol A epoxy acrylate, 4 parts of polyurethane acrylate, 35 parts of triethylene glycol divinyl ether , 1.3 parts of 1,6-hexanediol diacrylate, 1.3 parts of trimethylolpropane triacrylate, 7 parts of triarylsulfonium salt, 2 parts of 1-hydroxycyclohexyl phenyl ketone, silicone or Silicone polyether defoamer 0.4 part, organosilane leveling agent 1 part.

[0050] First select 7 parts of triarylsulfonium salts as the photoinitiator of the cationic polymerization system, then select 35 parts of triethylene glycol divinyl ether, place the photoinitiator triarylsulfonium salts in a constant pressure funnel at a certain speed Add dropwise into triethylene glycol divinyl ether, and start the agitator to stir at high speed at the same time, and form a uniform solution I after 30 minu...

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Abstract

The invention discloses an ultraviolet light polymerization hybrid system imprinting resist for large-area nanoimprint. The ultraviolet light polymerization hybrid system imprinting resist is preparedfrom, by weight, 10-60 parts of aliphatic epoxy resin, 5-15 parts of epoxy acrylate, 0-10 parts of urethane acrylate, 20-40 parts of reactive diluents, 1-15 parts of photoinitiator and 0-5 parts of aid. The photoinitiator is prepared from triaryl iodonium salt and 1-hydroxy cyclohexyl phenyl ketone. The imprinting resist is a cationic polymerization and free radical polymerization hybrid system imprinting resist, wherein a cationic polymerization system is the main component, a cationic polymerization system belongs to an enhanced item and is used for increasing the curing rate of the imprinting resist and improving the adhesive force of the cured imprinting resist and a mould, and demoulding is easy. During curing, the size shrinking rate of the imprinting resist is low, and the imprinting precision and quality are high.

Description

technical field [0001] The invention relates to an embossing material, in particular to an ultraviolet curing hybrid system embossing adhesive for large-area nano-imprinting. Background technique [0002] In order to improve and improve the performance and quality of products in the fields of high-definition flat panel display, high-efficiency solar panels, anti-reflection and self-cleaning glass, LED patterning, and wafer-level micro-nano optical devices, there is a huge need for large-area micro-nano patterning technology. The common feature of these products is the need to efficiently and cost-effectively manufacture large-area and complex three-dimensional micro-nano structures on large-scale non-flat rigid substrates (hard substrates or substrates) or fragile substrates. However, various existing micro-nano manufacturing technologies (such as electron beam lithography, optical lithography, laser interference lithography, holographic lithography, etc.) It still faces ma...

Claims

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Application Information

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IPC IPC(8): G03F7/027G03F7/004
CPCG03F7/004G03F7/027
Inventor 兰红波许权
Owner QINGDAO TECHNOLOGICAL UNIVERSITY
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