Full-silicon MEMS wafer-level vacuum packaging method based on anode bonding

Abstract

The invention discloses a full-silicon MEMS wafer-level vacuum packaging method based on anode bonding; two-time anode bonding is adopted in the MEMS wafer-level vacuum packaging process to realize mechanical and electric signal connection among a cover plate, an MEMS device structure and a substrate and form a pressure controllable MEMS sealing cavity; compared with the existing full-silicon bonding process based on silicon-silicon solder bonding and silicon-silicon fusion bonding, the method in the invention is low in process difficulty and high in rate of finished products; the cover plateglass sheet is thinned to 10-50 microns and the substrate glass sheet is thinned to 10 -50 microns; the thickness of the dielectric layer of the existing full-silicon bonding process is not more than3 microns to the maximum; the thinner dielectric layer is, the larger the introduced parasitic capacitance is; hence, the parasitic capacitance introduced by the method in the invention is small, so that the signal-to-noise ratio output by the MEMS device is improved.

Description

technical field [0001] The invention relates to an all-silicon MEMS wafer-level vacuum packaging method based on anode bonding, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the increasing demand for high-performance MEMS sensors in the fields of the Internet of Things, smart devices, and military equipment, the development direction of MEMS technology is developing along the direction of full siliconization, wafer-level packaging, and heterogeneous integration. A typical MEMS device structure generally includes a substrate layer, a MEMS movable structure layer, and a package cover layer. The substrate layer provides mechanical support for the MEMS movable structure. The wafer-level vacuum packaging of MEMS devices is to prepare the third layer of cover plate wafers to seal the MEMS structure between the substrate and the cover plate. The cover plate needs to be used in the cavity. Electrical extraction channels ...

AI Technical Summary

Problems solved by technology

However, MEMS wafer-level vacuum packaging using all-silicon bonding uses multiple silicon-silicon bonding processes in the process, which requires high surface roughness, flatness, and cleanliness of the bonding surface, resulting in Tape-out yield is generally low

However, silicon-silicon low-temperature bonding usually uses gold with a thickness of several microns as the solder layer, which causes the problem of high processing costs.

In addition, since silicon dioxide is used as the insulating medium between the silicon substrate, the MEMS structure, and the silicon cover plate, and the thickness of the silicon dioxide prepared by the conventional process is at most 3 microns, the parasitic capacitance between the MEMS structures is very large. Big

MEMS devices mostly use capacitors as sensitive units or drive execution structures. Excessive parasitic capacitance will reduce the sensitivity of MEMS sensors and the drivability of MEMS devices.

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