Bidirectional transient voltage suppressor diode and manufacturing method thereof
A technology of transient voltage suppression and manufacturing method, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of large reverse leakage, low reliability, complex process, etc., and achieve low contact resistance and good packaging. Compatibility, effect of wide process operating window
Active Publication Date: 2018-07-10
BEIJING MXTRONICS CORP +1
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Problems solved by technology
The traditional bidirectional transient voltage suppression diode die process is complicated. On the basis of the unidirectional transient voltage suppression diode die process, double-sided photolithography, chemical plating and other processes are required.
Bidirectional transient voltage suppression diodes with this structure are prone to large reverse leakage, poor heat dissipation, and low reliability. The die is mostly made of modified epoxy resin film, and the packaging form is not suitable for working under harsh environmental conditions.
Method used
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Embodiment Construction
[0038] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
[0039] Such as figure 1 As shown, the unidirectional transient voltage suppression diode tube core in the present invention includes a silicon chip 1, a passivation protection layer 2, a first electrode and a second electrode, and the first electrode is successively a metal titanium layer 3 and a metal nickel layer from inside to outside. Layer 5 and metal silver layer 4; the same structure as the second electrode and the first electrode, with metal titanium layer 6, metal nickel layer 7 and metal silver layer 8 in sequence from inside to outside.
[0040] Silicon wafer 1 is an N-type silicon wafer, adopting N type, with a thickness of 220 μm, forming a PN junction through diffusion, and passivating the exposed PN junction to form a passivation protection layer 2, with a thickness of 1-2 μm.
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The present invention discloses a bidirectional transient voltage suppressor diode and a manufacturing method thereof. A diode core is obtained by metallization processing of a first unilateral diodecore, a soldering lug and a second unilateral diode, then overlaying in order and heating for a while. The first unilateral diode and the second unilateral diode are the same in structure, and a soldering temperature between diode cores is high to provide a wide process operation window for subsequent technologies such as diode core seal and lead soldering and reduce the influence of an environment temperature on the diode core soldering structure when checking and usage of the diode. A eutectic have a connection effect between the diode cores, has no complex phase change in a solid phase andhigh in stability, and improves the device reliability. The bidirectional transient voltage suppressor diode and the manufacturing method thereof are simple in process and low in manufacturing cost,can be used to manufacture a bidirectional transient voltage suppressor diode with low leakage current, an easy-controlled clamp voltage, a small volume, small resistance and high reliability. The structure of the bidirectional transient voltage suppressor diode is suitable for a plurality of package forms such as glass package, plastic package, metal package, etc.
Description
technical field [0001] The invention relates to a bidirectional transient voltage suppression diode and a manufacturing method, belonging to the field of semiconductor devices. Background technique [0002] Due to the advantages of small L size, large peak power, strong anti-surge voltage capability, good breakdown voltage characteristic curve, low zener impedance, small reverse leakage and fast response time to pulses, transient voltage suppression diodes are the solution to electronic problems. It is a high-performance protection device for problems such as circuit on-off, electrostatic discharge, and electromagnetic interference caused by voltage transients and current surges. It is one of the most important electronic components in electronic circuits and has been widely used in various In the fields of civil and military electronics, especially in the fields of aerospace, aviation and weaponry, the requirements for reliability are becoming higher and higher. [0003] M...
Claims
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IPC IPC(8): H01L29/861H01L25/07H01L23/373H01L21/329
CPCH01L23/3736H01L25/074H01L29/66098H01L29/861
Inventor 殷丽刘学明吴立成王传敏
Owner BEIJING MXTRONICS CORP