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A kind of preparation method of gallium oxide ohmic contact electrode
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An ohmic contact electrode, gallium oxide technology, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of crystal quality damage, poor stability of ohmic contact characteristics, unstable oxygen vacancy defects, etc., and achieves a simple preparation process. Effect
Active Publication Date: 2020-12-11
DALIAN UNIV OF TECH
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Problems solved by technology
In contrast, the damage to the crystal quality of the device surface is more obvious, and the instability of oxygen vacancy defects leads to poor stability of ohmic contact characteristics.
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Embodiment 1
[0027] This embodiment provides an ohmic contact electrode gallium oxide, comprising the following process steps:
[0028] 1. On the gallium oxide layer, a magnetron sputtering method, the pre-deposition of a certain thickness and a gold layer thickness of the layer of magnesium, a magnesium layer is 100 nm or, as the thickness of the gold layer is 100 nm or;
[0029] Step 2. rapid annealing furnace using RTP, the above-described heat-treated sample:
[0030] The heat treatment temperature is 300 degrees C, the heat treatment atmosphere is nitrogen gas, a pressure of 1 × 10 4 Pa, the heat treatment time is 300s.
[0031] Step 3. After return to room temperature, taken out, that is, the gallium oxide ohmic contact electrode.
Embodiment 2
[0033] This embodiment provides an ohmic contact electrode gallium oxide, comprising the following process steps:
[0034] 1. On the gallium oxide layer, a thermal evaporation method, a certain thickness of the pre-deposition of magnesium and gold layers, the thickness of the Mg layer was 500 nm, thickness of the gold layer was 1000 nm;
[0035] Step 2. rapid annealing furnace using RTP, the above-described heat-treated sample:
[0036] The heat treatment temperature is 400 degrees Celsius, the heat treatment atmosphere is nitrogen gas, a pressure of 1 × 10 5 Pa, the heat treatment time is 300s.
[0037] Step 3. After return to room temperature, taken out, that is, the gallium oxide ohmic contact electrode.
Embodiment 3
[0039] This embodiment provides an ohmic contact electrode gallium oxide, comprising the following process steps:
[0040] 1. On the gallium oxide layer using electron beam evaporation method, a certain thickness of the pre-deposition layer and a gold layer thickness of magnesium, a magnesium layer is 1000nm, thickness of the gold layer was 1000 nm;
[0041] Step 2. Using a tubular furnace, the heat treatment is performed in the sample:
[0042] The heat treatment temperature is 500 degrees Celsius, the heat treatment atmosphere is an argongas pressure of 1 × 10 5 Pa, the heat treatment time is 500s.
[0043] Step 3. After return to room temperature, taken out, that is, the gallium oxide ohmic contact electrode.
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Abstract
The invention belongs to the technical field of preparation of ohmic contact electrodes for semiconductor devices and provides a preparation method of a galliumoxideohmic contactelectrode. The preparation method comprises the following steps: step 1, pre-depositing a magnesium layer and a gold layer sequentially on a galliumoxide layer, wherein the thickness of the magnesium layer is 1nm-1mm,and the thickness of the gold layer is 1nm-1mm; step 2, performing heat treatment on the sample under the heat treatment conditions that the heat treatment temperature is 100DEG C-800DEG C, the heat treatment time is 30s-3600s, the heat treatment pressure is 1*10<-6>Pa-1*10<6>Pa, and the heat treatment atmosphere is vacuum or inert gas; and step 3, lowering the temperature to room temperature, andtaking out the product, thereby obtaining the galliumoxideohmic contactelectrode. The innovation of the invention lies in designing a novel gallium oxide ohmic contact electrode based on magnesium-gold alloy, and the novel gallium oxide ohmic contact electrode is simple in preparation process, has no damage to gallium oxide materials and is especially suitable for the development of gallium oxide based devices with lower electron concentration.
Description
Technical field [0001] The semiconductor device of the present invention belongs to the technical field of an ohmic contact electrode, in particular, it relates to a novel method of preparing gallium oxide ohmic contact electrode. Background technique [0002] Gallium oxide represented by the third generation of wide bandgap semiconductor material for its large band gap, high breakdown field strength and high saturated electrondrift velocity, the advantages of resistance to corrosion and radiation projecting the like, in the production of high-efficiency UV Detector gallium oxide material, an electron device according to aspects of the gas sensor, biosensor-friendly, and a high frequency, high power, radiation has important applications, electrons or holes having a conductive property is the basis for the preparation of the above types of devices, is today gallium oxide hot topic of material prepared. Undoped gallium oxide material often exhibits a high resistivity characteristi...
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