Method for preparing high-performance ZnO-based transparent conductive oxide thin film at low temperature

An oxide thin film, transparent and conductive technology, applied in liquid chemical plating, metal material coating process, coating, etc., can solve the problems of poor photoelectric performance of thin film samples, achieve excellent photoelectric performance, low heat treatment temperature, and low cost Effect

Active Publication Date: 2018-09-18
WUHAN UNIV OF TECH
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the ZnO-based transparent conductive oxide films with excellent photoelectric properties prepared by the sol-gel method are all annealed at high temperature, that is, the annealing temperature is above 600°C, and the prepared film samples have good crystallinity and excellent photoelectric properties. Performance, the photoelectric performance of thin film samples prepared at low temperature is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing high-performance ZnO-based transparent conductive oxide thin film at low temperature
  • Method for preparing high-performance ZnO-based transparent conductive oxide thin film at low temperature
  • Method for preparing high-performance ZnO-based transparent conductive oxide thin film at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] A method for preparing a low-temperature high-performance transparent conductive oxide film, comprising the following steps:

[0044] (1) According to the chemical composition Al 0.02 Zn 0.98 The stoichiometric ratio of O element weighs 3.2594g zinc acetate dihydrate (Zn(CH 3 COO) 2 2H 2 O) and 0.1137g aluminum nitrate nonahydrate (Al(NO 3 ) 3 9H 2 (2), after being dissolved in 20mL of solvent ethylene glycol methyl ether, 0.9mL of ethanolamine with an equimolar ratio of metal ions is added dropwise in the solution with a dropper, and then constant volume makes the sol concentration be 0.3M / L , heated the prepared solution to 60°C and stirred for 3 hours, then filtered, and the obtained clear solution was allowed to stand at room temperature for 48 hours to allow it to fully age to form a clear and transparent sol for use;

[0045] (2) After the quartz substrate was ultrasonically cleaned in acetone, ethanol and deionized water for 20 minutes, a clean substrate w...

Embodiment 2

[0050] A method for preparing a low-temperature high-performance transparent conductive oxide film, comprising the following steps:

[0051] (1) According to chemical composition, Al 0.01 Zn 0.99 O(1#), Al 0.03 Zn 0.97 O(2#) and Al 0.04 Zn 0.96 The stoichiometric ratio of the O(3#) element weighs zinc acetate dihydrate (Zn(CH 3 COO) 2 2H 2 O) and aluminum nitrate nonahydrate (Al(NO 3 ) 3 9H 2 (2), the specific dosage is as shown in Table 1. After it is dissolved in 20mL of solvent ethylene glycol methyl ether, 0.9mL ethanolamine with an equimolar ratio to the metal ion is added dropwise in the solution with a dropper, and then the volume is made to make the sol The concentration is 0.3M / L, the prepared solution is heated to 60°C and stirred for 3 hours, then filtered, and the obtained clear solution is allowed to stand at room temperature for 48 hours to allow it to fully age to form a clear and transparent sol for use;

[0052] Table 1

[0053]

[0054] (2) Aft...

Embodiment 3

[0059] A method for preparing a low-temperature high-performance transparent conductive oxide film, comprising the following steps:

[0060] (1) According to the chemical composition Sn 0.015 Al 0.02 Zn 0.965 The stoichiometric ratio of O element weighs 3.2095g zinc acetate dihydrate (Zn(CH 3 COO) 2 2H 2 O), 0.1137g aluminum nitrate nonahydrate (Al(NO 3 ) 3 9H 2 O) 0.1137g and 0.0797g tin tetrachloride pentahydrate (SnCl 4 ·5H 2 (0), after it is dissolved in the solvent ethylene glycol methyl ether of 20mL, the ethanolamine (0.9mL) of equimolar ratio with metal ion is added dropwise in the solution with dropper, then constant volume makes sol concentration be 0.3M / L, heated the prepared solution to 60°C and stirred for 3 hours, then filtered, and the obtained clear solution was allowed to stand at room temperature for 48 hours to allow it to fully age to form a clear and transparent sol for use;

[0061] (2) After the quartz substrate was ultrasonically cleaned in a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
transmittivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing a high-performance ZnO-based transparent conductive oxide thin film at a low temperature. The method comprises the following steps of 1), zinc acetate dihydrate and Al source and Sn source are combined according to requirements and are dissolved in ethylene glycol monomethyl ether, and then stabilizer is added dropwise into zinc-containing solution,after heating, stirring and filtering, and fully aging at room temperature, clear and transparent sol is obtained for later use; 2) substrate is cleaned up, the sol is uniformly spin-coated on the surface of the substrate by a glue homogenizing machine, the substrate is carried out pre-heat treatment, the spin coating process and the pre-heat treatment process are repeated until a gel film is obtained; and 3), first-step annealing treatment on the gel film in an air atmosphere is carried out, second-step annealing treatment in the atmosphere of nitrogen or argon is carried out, and the high-performance ZnO-based transparent conductive oxide thin film is obtained when cooling to room temperature. According to the method for preparing the high-performance ZnO-based transparent conductive oxide thin film at the low temperature, the preparation method is simple in process, the lattice energy of the reaction system can be effectively reduced, and the thin film can be crystallized in advanceat the temperature of about 450 DEG C.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials, in particular to a method for preparing a high-performance ZnO-based transparent conductive oxide thin film at low temperature. Background technique [0002] In recent years, with the continuous development of semiconductor technology, products ranging from flexible displays to radio frequency identification tags to wearable electronics have gradually entered the market. In order to meet the growing demands of the flexible electronics market, it is highly necessary to replace hard glass with flexible polymer materials as substrates. Therefore, it is imminent to develop a low-temperature process compatible with flexible polymer materials to prepare ZnO-based transparent conductive oxide thin film materials. [0003] At present, many scholars at home and abroad have obtained ZnO-based transparent conductive oxide films with low resistivity and high transmittance through different p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/12
CPCC23C18/1216C23C18/1254C23C18/1295
Inventor 戴英贾倩裴新美陈文
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap