A kind of thick-film organic solar cell based on non-fullerene acceptor and its preparation method
An organic solar cell, non-fullerene acceptor technology, applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc. The effect of light stability, shortening transmission distance and improving power conversion efficiency
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Embodiment 1
[0046] (1) Clean the glass substrate coated with the ITO layer with acetone, micron-scale semiconductor special detergent, deionized water, and isopropanol ultrasonically in sequence, dry it with dry nitrogen and place it in a petri dish for later use (in this embodiment, cathode);
[0047] (2) Spin-coat the diethyl zinc solution on the ITO layer and heat it to react with air and water to form ZnO as the electron transport layer, the rotation speed is 5000rpm, and the thickness is about 30nm; place it on a heating table at 180°C for 30min for annealing;
[0048] (3) Mix the polymer donor PffBT4T-2OD and the non-fullerene acceptor EH-IDTBR according to the mass ratio of 1:1.5, dissolve in o-xylene solvent, and prepare the concentrations of 8, 11, and 14 mg mL respectively -1 The mixed solution was stirred at 80°C for 12h; then the mixed solution was spin-coated on the ZnO electron transport layer at a spin-coating rate of 2000rpm to obtain active layers with thicknesses of 100,...
Embodiment 2
[0065] Repeat Example 1, and replace the non-fullerene acceptor with O-IDTBR, whose chemical structural formula is as follows:
[0066]
[0067] Flip-chip devices with different active layer thicknesses were prepared and tested for photovoltaic performance. The results are shown in Table 2.
[0068] Table 2 The performance parameters of flip-chip organic solar cell devices with different active layer (PffBT4T-2OD:O-IDTBR) thicknesses
[0069]
[0070] It can be seen from Table 2 that the efficiency of the flip-chip organic solar cell device in this embodiment does not decrease but rises slightly as the thickness of the active layer increases. The current-voltage curve is shown in Figure 7 . This example further proves that, for an active layer system whose hole mobility is much higher than electron mobility, a high-efficiency thick-film battery device can be obtained by using a flip-chip device structure.
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