A resin grinding wheel for grinding cadmium zinc telluride wafer, its preparation method and application

A technology of cadmium zinc telluride wafer and resin grinding wheel, which is applied in grinding/polishing equipment, grinding device, abrasives, etc., can solve the problems of easy inlaying of particles, slow efficiency, and inability to be removed by polishing, etc. Good inlay and surface texture consistency

Active Publication Date: 2019-11-15
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in general, there are few research reports on the thinning process of CZT wafers, and the main disadvantages of the existing processing methods are: the efficiency is slow and the particles are easy to be embedded on the surface, which cannot be removed by polishing. There are processing techniques and related processing equipment in the processing process for further improvement

Method used

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  • A resin grinding wheel for grinding cadmium zinc telluride wafer, its preparation method and application
  • A resin grinding wheel for grinding cadmium zinc telluride wafer, its preparation method and application
  • A resin grinding wheel for grinding cadmium zinc telluride wafer, its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing a resin grinding wheel for grinding cadmium zinc telluride wafers, the resin grinding wheel is composed of the following raw materials in parts by volume: 12 parts of diamond with a particle size of 4 μm; 1 part of pore-forming agent; 3 parts of silicon carbide, The particle size is 2 μm; 8 parts of coupling agent; 15 parts of spherical silica with a hollow structure, the model is d01, and the median value is 0.9 μm; 15 parts of phenolic resin; specifically include the following steps:

[0031] (1) Pass the pore-forming agent through a 350-mesh sieve for 3 times before use; the phenolic resin is ball-milled with a liquid nitrogen ball mill for 120 hours and then pass through a 350-mesh sieve once for use; pass the silicon carbide and hollow spherical silica through a 280-mesh sieve respectively for 3 Mix after the second time to get mixed powder I;

[0032] (2) Treat the diamond surface with NaOH solution (mass fraction: 10%) at 90°C for 120 minut...

Embodiment 2

[0036] The difference between the method of this example and Example 1 is that in the grinding wheel formula, there are 19 parts of diamond with a particle size of 6 μm; 2 parts of pore-forming agent; 2 parts of silicon carbide; 5 parts of coupling agent; 8 parts of spherical silica 12 parts of phenolic resin;

[0037] Preparation method, the condition of hot alkali treatment in step (2) is KOH solution at 80°C (mass fraction is 40%), step (3) mix powder III and corundum ceramic balls for 2 hours, check under a microscope after ball milling For the uniformity of the mixture, 8 places are randomly selected to detect whether there are bright spots and uneven mixing.

Embodiment 3

[0039] The difference between the method of this embodiment and Example 1 is that in the grinding wheel formula, 10 parts of diamond; 0.5 parts of pore-forming agent; 2 parts of silicon carbide; 5 parts of coupling agent; 8 parts of spherical silica; 12 parts of phenolic resin share;

[0040] The preparation method, the ball milling time of phenolic resin in step (1) is 72h, the hot alkali treatment time in step (2) is 60min; the volume of acetone added is 300mL, and the ultrasonic treatment time is 15min; the weight of the mixed powder III and corundum ceramic balls in step (3) The ratio is 3:1; in step (4), the initial temperature is 180°C, the initial pressure is 1.8Mpa, keep the constant temperature and pressure for 1min, increase the pressure to 5.8Mpa, deflate 3 times, and hold the heat for 60min.

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Abstract

The invention belongs to the technical field of resin grinding wheels and particularly relates to a resin grinding wheel used for cadmium zinc telluride crystal wafer grinding and a preparation methodand application thereof. According to the method, treated diamond and a coupling agent are mixed according to a formula proportion, after ultrasonic treatment is performed, the mixed diamond and coupling agent are mixed with phenolic resin, a pore former, and a mixture of silicon carbide and hollow spherical silicon dioxide in sequence, ball-milling is performed, and a formed material is prepared; and then hot pressing and demoulding are performed, and a finished grinding wheel is prepared, wherein the prepared resin grinding wheel can be used for cadmium zinc telluride crystal wafer reduction grinding, the porosity of the grinding wheel is 40%-70%, pores are uniformly distributed and have the hole diameter size being 70-200 mum, the crystal wafer notch in the cadmium zinc telluride crystal wafer reduction technology can be controlled to be within 35 mum, meanwhile, the surface grain consistency is good, embedding of surface grains is avoided, since the surface grains of a crystal wafer subjected to reduction grinding are uniform and free of deep scratches, the yield of cadmium zinc telluride crystal wafers is guaranteed, the processing efficiency is improved, and the resin grinding wheel exhibits quite high application and popularization value.

Description

technical field [0001] The invention belongs to the technical field of resin grinding wheels, and in particular relates to a resin grinding wheel for grinding cadmium zinc telluride wafers, a preparation method and application thereof. Background technique [0002] Cadmium zinc telluride wafer (CdZnTe, CZT) crystal is a wide band gap II-VI compound semiconductor, its single crystal has extremely high resolution at room temperature, and is widely used as the epitaxial substrate of infrared detector HgCdTe and room temperature nuclear radiation Detectors, etc. It has excellent photoelectric properties and can directly convert X-ray and γ-ray photons into electrons at room temperature. It is by far the most ideal semiconductor material for manufacturing room temperature X-ray and γ-ray detectors. Compared with silicon and germanium detectors, CdZnTe crystal is the only semiconductor that can work at room temperature and can handle two million photons / (s·mm). In addition, CdZnT...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D3/28B24D3/34B24D18/00
CPCB24D3/28B24D3/344B24D18/0009
Inventor 赵延军惠珍曹剑锋丁玉龙
Owner ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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