Silicon nitride ceramic material for backboard of mobile phone and preparation method thereof

A silicon nitride ceramic and backplane technology, which is applied in branch equipment, telephone structure, electrical components, etc., can solve problems such as affecting the operating speed and reliability of mobile phones, low thermal conductivity of zirconia, and reducing application reliability. , to avoid the card machine and performance degradation, reduce the attenuation of microwave signals, and improve the ability to receive signals.

Active Publication Date: 2018-12-07
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF11 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One is that the impact toughness is poor, and it is easy to break during machining; moreover, zirconia relies on phase transformation toughening to ensure high toughness, and frequent impacts can easily lead to micro-crack expansion, thereby reducing its application reliability
The second is that the thermal conductivity of zirconia is low, usually only about 5W / m·K, and it is difficult to dissipate heat, especially when the mobile phone software runs at high speed and the battery heats up, the poor heat dissipation will easily affect the running speed and reliability of the mobile phone
The third is that the dielectric loss of zirconia is at 10 -2 The magnitude will cause the signal to attenuate, and it is easy to talk poorly in places with poor mobile phone signals
Fifth, the hardness of zirconia is slightly lower, and there is a risk of scratching

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon nitride ceramic material for backboard of mobile phone and preparation method thereof
  • Silicon nitride ceramic material for backboard of mobile phone and preparation method thereof
  • Silicon nitride ceramic material for backboard of mobile phone and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Add 160g of silicon nitride powder, 2g of chromium oxide coloring agent and 15g of sintering aid consisting of alumina and yttrium oxide (the mass ratio of alumina and yttrium oxide is 3:5) to 38g of ethanol / butanone solvent system ( The mass ratio of ethanol and butanone is 34:66). Add 3.5g glyceryl trioleate as a dispersant and carry out ball milling, the rotating speed is 380 rev / min, add 16g PVB (polyvinyl butyral) after ball milling 12h as binding agent, 16g DBP (dibutyl phthalate) ester) as a plasticizer, ball milled again for 36 hours at a speed of 200 rpm, then defoamed and cast, and a cast film with a thickness of 0.6 mm was prepared. After debonding, the cast film is sintered in a carbon tube furnace under a nitrogen atmosphere at a heating rate of 5°C / min to 1750°C and kept for 2 hours to obtain a dense and complete silicon nitride ceramic backplane. figure 1 Show the microstructure (SEM figure of section) of the silicon nitride ceramics that the present emb...

Embodiment 3

[0055] Add 160g of silicon nitride powder and 16g of sintering aid consisting of alumina and erbium oxide (the mass ratio of alumina and erbium oxide is 3:6) to 38g of ethanol / butanone solvent system (the mass ratio of ethanol and butanone The ratio is 34:66). Using 3.5g glyceryl trioleate as dispersant, the speed is 380 rpm, after ball milling for 12h, add 16g PVB as binder, 16g DBP as plasticizer, ball mill again for 24h, speed is 200 rpm, and then defoaming , cast, and prepare a cast film with a thickness of 0.6 mm. After the cast film is debonded, it is sintered in a carbon tube furnace, and the temperature is raised to 1780 °C at a rate of 5 °C / min, and the sintering is achieved by keeping the temperature for 6 hours. A dense and complete silicon nitride ceramic backplane can be obtained.

Embodiment 4

[0057] Add 96g of silicon powder and 16g of sintering aids composed of alumina and erbium oxide (the mass ratio of alumina and erbium oxide is 3:6) to 38g of ethanol / butanone solvent system (the mass ratio of ethanol and butanone is 34 : 66). Using 3.5g glyceryl trioleate as dispersant, the speed is 380 rpm, after ball milling for 12h, add 16g PVB as binder, 16g DBP as plasticizer, ball mill again for 48h, speed is 200 rpm, and then defoaming , cast, and prepare a cast film with a thickness of 0.6 mm. After debonding, the cast film was nitrided in a carbon tube furnace at 1400°C for 8 hours, and then sintered at 1780°C at a heating rate of 5°C / min for 8 hours. A dense and complete silicon nitride ceramic backplane can be obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
densityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a silicon nitride ceramic material for a backboard of a mobile phone and a preparation method thereof. The preparation method comprises the step of mixing, molding and sintering a raw material component which is a mixture of a silicon source, a coloring agent and a sintering additive to prepare the silicon nitride ceramic material. The invention further provides the silicon nitride ceramic material prepared by the method and application of the silicon nitride ceramic material in a backboard of a mobile phone. The silicon nitride ceramic material is a material with excellent performance and has great application potential, and has the advantages of good toughness reaching 12MPa.m<1 / 2> or more, high strength, good impact toughness, high conductivity reaching 40-70W / m.K, low dielectric loss which is general at 10<-4> order, high hardness to prevent scraping or easy extending even microcrack occurs, small density, transparency, good texture, easy coloring and goodcoloring effect; and the method is simple and reliable in process and easy to operate, and has low raw material cost.

Description

technical field [0001] The invention belongs to the field of ceramic material and its preparation process and application, and relates to a novel silicon nitride ceramic material used for the back plate of a mobile phone and a preparation method thereof. Background technique [0002] With the rapid development of communication and digital technology, electronic products such as mobile phones have undergone several upgrades in just a few decades, becoming the epitome of technological progress. The mobile phone shell is not only a powerful protective umbrella for the mobile phone, but also ensures the reception and transmission of electromagnetic signals, reduces the damage caused by accidental drops, prolongs the service life of the mobile phone, and more importantly, improves the product experience of users. Therefore, the materials for making mobile phone shells are required to have the characteristics of no electromagnetic shielding, high toughness, various colors, good te...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622H04M1/02
CPCH04M1/026C04B35/584C04B35/591C04B35/622C04B2235/3217C04B2235/3224C04B2235/3225C04B2235/6586C04B2235/3241C04B2235/96C04B2235/9607C04B2235/77H04M1/0202H04M1/0283C04B2235/9661C04B2235/3873C04B35/6264C04B2235/6562C04B2235/428C04B2235/661C04B35/486C04B2235/3244C04B35/632C04B35/6342C04B2235/6567C04B2235/95C04B2235/6025C04B35/6261
Inventor 张景贤段于森刘宁马瑞欣江东亮
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap