Self-supporting tin thin film with mass thickness of 700-1000 microgram/cm<2> and preparation method thereof

A mass-thickness, tin-supporting technology, applied in the field of thin film preparation, can solve problems such as target film curling, affecting the use of self-supporting targets, and cracks in Ir deposition layers

Active Publication Date: 2018-12-18
泰安泰山科技有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Chinese patent CN106868460A uses the focused heavy ion sputtering method to prepare a self-supporting Ir target with a mass thickness of 400-2000 μg / cm2, which solves the technical problems of curling and poor flatness of the target film in the prior art preparation process
However, due to the large residual stress between the Ir deposition layer and the copper base during the sputtering process, releasing the stress during dissolution and separation will cause cracks in the Ir deposition layer, which will affect the use of the self-supporting target.
In addition, the preparation steps of this invention are complicated. When depositing the Ir deposition layer, two steps are used. It is necessary to take the Ir deposition layer out of the focused heavy ion sputtering deposition system and put it into the deposition system again.

Method used

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  • Self-supporting tin thin film with mass thickness of 700-1000 microgram/cm&lt;2&gt; and preparation method thereof
  • Self-supporting tin thin film with mass thickness of 700-1000 microgram/cm&lt;2&gt; and preparation method thereof
  • Self-supporting tin thin film with mass thickness of 700-1000 microgram/cm&lt;2&gt; and preparation method thereof

Examples

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Embodiment 1

[0044] A mass thickness of 800μg / cm 2 The preparation method of the self-supporting tin film comprises the following steps: selecting glass of 2 cm × 2 cm × 0.5 cm as the substrate 1, and depositing a potassium chloride release agent 2 by electron beam thermal evaporation, the potassium chloride release agent 2 Thickness 250nm;

[0045] Place the glass substrate 1 on the workpiece table 9, use the copper oxide target as the 90-degree FCVA cathode 5, and the tin target as the straight tube FCVA cathode 13, and vacuum the deposition device through the vacuum port 8, so that the reaction chamber 12 Vacuum degree is 1.0×10 -4 Pa; then argon gas is introduced from the air inlet 11, so that the vacuum degree in the reaction chamber 12 is 1.3Pa; the 90-degree magnetic filter cathodic vacuum arc (FCVA) system is turned on and the deposition parameters are set: the arc starting current is 60A, and the elbow The magnetic field is 2.4A, the beam current is 55mA, the negative bias volta...

Embodiment 2

[0050] A mass thickness of 900μg / cm 2 The preparation method of the self-supporting tin film comprises the following steps: select 2cm×2cm×0.5cm single crystal silicon as the substrate 1, adopt the electron beam thermal evaporation method to deposit the potassium chloride release agent 2, and the potassium chloride release agent The thickness of the agent 2 is 280nm; the monocrystalline silicon substrate 1 is placed on the workpiece table 9, the copper oxide target is used as the 90-degree FCVA cathode 5, and the tin target is used as the straight tube FCVA cathode 13, and the deposition device is pumped through the vacuum port 8. Vacuum, so that the degree of vacuum in the reaction chamber 12 is 1.3 × 10 -4Pa; then argon gas is introduced from the air inlet 11, so that the vacuum degree in the reaction chamber 12 is 1.4Pa; the 90-degree magnetic filter cathodic vacuum arc (FCVA) system is turned on and the deposition parameters are set as follows: the arc starting current is ...

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Abstract

The invention discloses a self-supporting tin thin film with a mass thickness of 700-1000 microgram / cm<2> and a preparation method thereof. The method comprises the following steps that a potassium chloride release agent is deposited on the surface of a substrate; (2) a copper oxide buffer thin film is deposited on the surface of the substrate by adopting a 90-degree magnetic filtration cathode vacuum arc (FCVA) system; (3) a sample is rotated by 180 degrees, and a straight-pipe magnetic filtration cathode vacuum arc (FCVA) system is adopted for depositing the tin thin film again; (4) the obtained substrate is put into a container filled with an ethanol solution for a de-molding treatment; and (5) the tin thin film is fished up by using a fishing plate to obtain the self-supporting tin thin film with the mass thickness of 700-1000 microgram / cm<2>. By adopting the preparation method, the self-supporting tin thin film which has the mass thickness with 700-1000 microgram / cm<2>, stress islow, uniform and compact can be prepared; and the process is simple.

Description

technical field [0001] The invention relates to the field of film preparation, in particular to a film with a mass thickness of 700-1000 μg / cm 2 Self-supporting tin thin films and methods for their preparation. Background technique [0002] A self-supporting film, as opposed to a film with a substrate, refers to a film that is not supported by a substrate during use. The commonly used self-supporting film preparation technology is to coat or grow a soluble release agent on a solid polished surface (such as a polished silicon wafer or glass sheet), deposit a film, and then dissolve the release agent. [0003] In addition to being self-supporting, the self-supporting film is also required to have the characteristics of no defect, uniform flatness, purity, large area, and low stress. Chinese patent CN106868460A adopts the focused heavy ion sputtering method to prepare a self-supporting Ir target with a mass thickness of 400-2000 μg / cm2, which solves the technical problems of ...

Claims

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Application Information

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IPC IPC(8): C23C14/02C23C14/18C23C14/30C23C14/32C23C14/58
CPCC23C14/0005C23C14/024C23C14/18C23C14/30C23C14/325C23C14/5873
Inventor 欧志清
Owner 泰安泰山科技有限公司
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