A kind of etching solution composition and etching method of silver-containing composite film

A technology of etching solution and composite film, applied in the direction of surface etching composition, chemical instruments and methods, etc., can solve problems such as adsorption, large difference in rate, ITO collapse, etc.

Active Publication Date: 2020-07-07
JIANGYIN JIANGHUA MICROELECTRONICS MATERIAL
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But in actual production, the above-mentioned etching solution is used for etching transparent conductive film / silver film / transparent conductive film and has the following technical defects: first, silver material and ITO material have very different rates under the same etching conditions, and the etching rate of silver material The speed is much higher than that of the ITO material, resulting in the etching effect of the collapse of the top layer of ITO; second, the free silver complex in the etching solution is easy to undergo a displacement reaction with the aluminum wiring, resulting in a very small amount of simple silver being adsorbed on the surface of the aluminum wiring

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of etching solution composition and etching method of silver-containing composite film
  • A kind of etching solution composition and etching method of silver-containing composite film
  • A kind of etching solution composition and etching method of silver-containing composite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-5

[0032] Embodiment 1-5 (embodiment is called for short S, and comparative example is called for short D, hereinafter the same)

[0033] Components in Examples 1-5 and Comparative Examples 1-3 and the percentage by weight of each component are shown in the table below, and the composition of the comparative example etching solution is according to CN107419270A:

[0034] S1 S2 S3 S4 S5 D1 D2 Nitric acid / % 5 8 5.5 6.5 7 6.5 6.5 Phosphoric acid / % 53 47 57 53 50 53 53 Acetic acid% 15 8 5 10 14 10 10 Ammonium acetate / % 0.1 5 2.5 1 2 0 1 Dihydroxybutyric acid / % 0.1 5 0.3 3 1.5 0 0 water / % 26.8 27 29.7 26.5 25.5 30.5 29.5

[0035] Etching experiment:

[0036]Indium oxide film, silver film, and indium oxide film are coated in turn on the substrate to form an ITO-Ag-ITO laminated film, and a photoresist with a predetermined pattern is formed on the substrate by photolithography. In the spray etch...

Embodiment 6-8

[0044] Embodiment 6-8 is based on embodiment 5, and difference is the difference of ammonium salt, and the relation of ammonium salt and ITO residual and etching rate sees the following table:

[0045]

[0046] The etching effect of the etching solution containing ammonium persulfate in the above table is better than the etching solution containing ammonium acetate, diammonium hydrogen phosphate and ammonium sulfate.

Embodiment 9

[0048] Example 9 is based on Example 5 with the difference that an alpha-hydroxy acid is added:

[0049]

[0050] The data in the above table shows that, compared with branched aliphatic hydrocarbon α-hydroxy acids, straight-chain aliphatic hydrocarbon hydroxy acids have a stronger effect on reducing the silver etching rate. In addition, according to the observation results of silver resorption, the silver resorption amount of S6 is ≤25 , lower than the silver resorption of S7 and S8.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an etching liquid composition of a silver-containing compound film. The composition mainly comprises, by weight, 4-9% of nitric acid, 45-55% of phosphoric acid, 8-15% of aceticacid, 0.1-5% of inorganic ammonium salt and 20-30% of water and further comprises, by weight, not larger than 5% of C4-C6 aliphatic hydroxy acid, wherein an alpha-site carbon atom connected with a carboxyl group in the structural formula of the aliphatic hydroxy acid contains a hydroxyl group and an H substituting group. In the acidic etching system, based on the same inorganic acid concentration, due to the addition of alpha-hydroxy acid, the etching speed of a silver layer can be easily reduced, the etching speed of the etching liquid composition to silver and ITO is reduced, and the ITO collapsing of a top layer is improved, the adsorption amount of silver elementary substances on a substrate aluminum wiring surface is small, the later-period film plating requirement is met, and the etched product yield is improved. The invention further discloses an etching method of the etching liquid composition of the silver-containing compound film.

Description

technical field [0001] The invention relates to the technical field of electronic paste, in particular to an etching solution composition and an etching method for a silver-containing composite film. Background technique [0002] OLED displays are increasingly being used in mobile phones and televisions. With the increase of the OLED display area, the gate lines and data lines connected to the thin film transistor (TFT) become longer, and the traditional chromium (Cr), molybdenum (Mo), aluminum (Al) and their alloys are difficult to meet the increasing demands of flat panel displays. size and high resolution requirements of flat panel displays. Silver and its alloy wiring are widely used in the anode wiring (ITO-Ag-ITO) structure of OLED displays due to their excellent electrical conductivity and carrier mobility. [0003] In the traditional anode etching process, a three-step etching method is adopted, that is, ITO, Ag, and ITO are etched in steps, which is not only compl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/06C23F1/30
CPCC09K13/06C23F1/30
Inventor 徐杨邵勇承明忠陈林顾玲燕殷福华朱龙赵文虎
Owner JIANGYIN JIANGHUA MICROELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap