Method for preparing high-quality thin film by using ionized atom clusters and combining HIPIMS technology

A high-quality technology of atomic clusters, applied in the direction of ion implantation plating, coating, metal material coating technology, etc., can solve the problems of unstable mechanical properties, poor quality of film materials, and poor film bonding force, etc., to achieve Effects of sputtering yield improvement, bonding force improvement, and HV hardness improvement

Inactive Publication Date: 2019-03-01
昆山益固纳米科技有限公司
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing high-quality thin films using ionized atomic clusters combined with HIPIMS technology, to solve the existing problems in the prior art of using traditional direct current and intermediate frequency PVD methods to prepare thin film materials with poor quality, and to combine thin films produced by CVD methods. Poor strength and unstable mechanical properties

Method used

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  • Method for preparing high-quality thin film by using ionized atom clusters and combining HIPIMS technology
  • Method for preparing high-quality thin film by using ionized atom clusters and combining HIPIMS technology
  • Method for preparing high-quality thin film by using ionized atom clusters and combining HIPIMS technology

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Embodiment 1

[0060] DLC thin film coating process:

[0061] The specific steps are:

[0062] 1. Introduce one or several inert gases or a mixture of other gases into the cluster generation device to form cluster atoms. The clusters are ionized by the ICP ion source, and the substrate is cleaned by applying 300-500V. The cleaning time is 10min~30min ;

[0063] 2. Using the HIPIMS method, apply a negative bias voltage of 600V~1000V to the substrate, etch the substrate surface for 2min~20min, remove the oxide layer on the substrate surface, and form an activated fresh surface;

[0064] 3. Adjust the air pressure in the coating chamber to 0.1Pa~1.3Pa, and prepare a transition layer on the substrate. The transition layer is prepared by multi-arc or HIPIMS method to obtain a film layer with excellent bonding force; then use SPIK3000A high-power power supply Sputtering graphite targets with atomic cluster beams of inert gases;

[0065] 4. Coating in a vacuum chamber with a duty cycle of 3%~10%...

Embodiment 2

[0068] SiO2 film preparation process:

[0069] The specific steps are:

[0070] 1. One or several inert gases or a mixture of other gases are introduced into the cluster generation device to form cluster atoms. The clusters are ionized by the ICP ion source, and the substrate is cleaned by applying a bias voltage of 200V-500V. The cleaning time 10min~30min,

[0071] 2. At the same time, use the HIPIMS method to apply a negative bias voltage of 600V~1000V to the substrate, etch the substrate surface for 2min~20min, remove the oxide layer on the substrate surface, and form an activated fresh surface;

[0072] 3. Adjust the air pressure in the coating chamber to 0.1Pa~1.3Pa, and prepare a transition layer on the substrate. The transition layer is prepared by multi-arc or HIPIMS method to obtain a film layer with excellent bonding force; then use SPIK3000A high The power supply uses the atomic cluster beam of inert gas to sputter the graphite target;

[0073] 4. When depositing...

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Abstract

The invention discloses a method for preparing a high-quality thin film by using ionized atom clusters and combining an HIPIMS technology. The method is a PVD (physical vapor deposition) method for preparing the high-quality thin film by using the ionized atom clusters as sputtering gas and combining the HIPIMS technology; the film formation characteristic of high-power magnetron sputtering is exerted; the film formation deposition rate of the HIPIMS technology is exponentially improved; the high-quality thin film with excellent performance is obtained through preparation; inert gas is clustered through an atomic clustering device and is then ionized and guided out through an ionic device; a target material is bombarded under the effects of an electric field and an magnetic field, so thattarget material particles participate in a reaction on a base plate; the thin film is prepared. The method solves the problems that in the prior art, the quality of a film formed by a traditional PVDmethod is poor; that the combining force of the thin film produced by a CVD method is poor; that the mechanical performance is unstable.

Description

technical field [0001] The invention belongs to the technical field of PVD vacuum coating, and relates to a method for preparing high-quality thin films by using ionized atomic clusters combined with HIPIMS technology. Background technique [0002] Among many carbon materials, diamond-like carbon films have caused a worldwide research boom due to their excellent properties. The diamond-like carbon film is mainly composed of a three-dimensional network in which sp3 hybridized carbon atoms of the diamond structure and sp2 hybridized carbon atoms of the graphite structure are mixed with each other, usually in an amorphous state or an amorphous-nanocrystalline composite structure. Diamond-like carbon-based films have high hardness, excellent anti-friction and anti-wear properties, high thermal conductivity, low dielectric constant, wide band gap, good optical transparency, and excellent chemical inertness and biocompatibility. , machinery, electronics, optics, decorative appear...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/06C23C14/35C23C14/46
CPCC23C14/022C23C14/024C23C14/025C23C14/0605C23C14/35C23C14/46
Inventor 张克伟秦文斌林朝宗李宏霞
Owner 昆山益固纳米科技有限公司
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