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A method for selectively etching growth substrates to prepare suspended graphene support membranes

A graphene film and graphene technology, applied in the direction of graphene, crystal growth, single crystal growth, etc., can solve the problems of high cost, inability to prepare graphene support film on a large scale, unstable process, etc., and achieve low cost and complete The effect of high precision and simple process

Active Publication Date: 2020-05-05
PEKING UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can avoid the pollution of polymers, the cost is high, the process is unstable, and the graphene support film cannot be prepared on a large scale; 3. Spin-coat photoresist to protect graphene in advance, and selectively etch graphite by photolithography technology Graphene growth substrate, directly obtained suspended graphene after removing the photoresist
This method can prepare graphene-supported films in batches, but photoresist contamination on the graphene surface is still unavoidable

Method used

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  • A method for selectively etching growth substrates to prepare suspended graphene support membranes
  • A method for selectively etching growth substrates to prepare suspended graphene support membranes
  • A method for selectively etching growth substrates to prepare suspended graphene support membranes

Examples

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Embodiment 1

[0066] Example 1. Selective etching of copper foil substrate to prepare graphene support film

[0067] figure 1 It is a process flow diagram of the present invention. A specific implementation process is as follows:

[0068] 1) A graphene film with a controllable number of layers is grown on a copper foil substrate by low-pressure chemical vapor deposition (LPCVD).

[0069] Growth of single-layer large single-crystal graphene: Copper foil (purity 99.8%, thickness 25 microns) is first annealed at 1030°C and 100 sccm hydrogen atmosphere for 30 minutes, and the pressure is kept at about 100 Pa to remove organic matter and oxide layer. Then anneal in 100 sccm argon for 30 minutes to passivate the active sites on the surface of the copper foil. After the annealing process is completed, the graphene is grown at 1030° C. in an atmosphere of 500 sccm hydrogen and 1 sccm methane, the pressure is about 500 Pa, and the growth time is 3 hours.

[0070] Growth of double-layer graphene...

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Abstract

The invention discloses a method for selectively etching a growth substrate to prepare a suspended graphene support film. The manufacturing method avoids the graphene transfer process, has high efficiency and low cost, and can obtain a high-quality graphene support film by one-step etching. The obtained graphene support film does not need any polymer film and polymer fiber auxiliary support, the number of layers of the graphene support film is controllable, the integrity is high (90%-97%), the suspended area is large (diameter 10-50μm), and the clean area Wide (>100nm), and can achieve batch preparation. In addition, the graphene support film can be directly used as a support film for transmission electron microscopy, and can realize high-resolution imaging of the nanoparticles.

Description

technical field [0001] The invention relates to a method for selectively etching a growth substrate to prepare a suspended graphene support film. Background technique [0002] Graphene, as a single atomic layer two-dimensional material with high mechanical strength, high electrical conductivity, and high thermal conductivity, has good application prospects in the fields of support membranes, filter membranes, and diaphragms. For example, a suspended graphene film can be used as a transmission electron microscope grid to improve imaging resolution; a suspended single-layer graphene can be directly used as a hydrogen isotope separation film to achieve hydrogen isotope enrichment. Among the existing graphene preparation methods, chemical vapor deposition (CVD) can produce high-quality graphene films in batches on copper foil and other metal substrates, meeting the needs of large-scale graphene applications. However, it is still a major challenge to detach graphene from the sup...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194
CPCC01B32/194C01B2204/04C30B29/02C30B33/02C30B25/02B82Y30/00B82Y40/00C30B25/10C30B25/165C30B25/18
Inventor 彭海琳郑黎明邓兵
Owner PEKING UNIV
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