Slurry for suspension plasma spraying, method for forming rare earth acid fluoride sprayed film, and spraying member

Abstract

Provided is a slurry for suspension plasma spraying, which is a spray material used for suspension plasma spraying in an atmosphere including an oxygen-containing gas, contains 5-40 mass% of rare earth fluoride particles having a maximum particle diameter (D100) of 12 mum or less, and contains one or more types of solvent selected from among water and organic solvents. A rare earth acid fluoride-containing sprayed film, in which process shift and particle generation hardly occur, can be stably formed on a base material by carrying out suspension plasma spraying in an atmosphere including an oxygen-containing gas. A spraying member provided with this sprayed film exhibits excellent corrosion resistance to halogen-based gas plasma.

Description

technical field [0001] The present invention relates to a thermal spraying member suitable as a member exposed to a halogen-based gas plasma atmosphere in an etching process in semiconductor manufacturing, a suspension plasma thermal spraying slurry used for the production thereof, and a slurry using the same The formation method of the rare earth oxyfluoride thermal spray coating. Background technique [0002] In semiconductor manufacturing, processing is performed in an etching process (etcher process) using a highly corrosive halogen-based gas plasma atmosphere. It is known that yttrium oxide (Patent Document 1: Japanese Patent Application Laid-Open No. 2002-080954, Patent Document 2: Japanese Patent Laid-Open No. 2007-308794), yttrium fluoride (Patent Document 3: Japanese Patent Application Laid-Open No. 2002-115040, Patent Document 4: Japanese Patent Laid-Open No. 2004-197181) by performing atmospheric pressure plasma thermal spraying so that members whose films have b...

AI Technical Summary

Problems solved by technology

However, in the film-forming member of yttrium oxide, there is a problem that in the initial stage of the etching process, the yttrium oxide on the outermost surface reacts with fluoride, and the concentration of fluorine gas in the etching device changes, making the etching process unstable.

However, in the case of using a slurry material of yttrium oxyfluoride, it is difficult to stably form a thermal sprayed film as yttrium oxyfluoride in spite of the suspension plasma thermal spraying.

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