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Method for preparing nitrogen and iodine co-doped titanium dioxide barrier layer

A titanium dioxide and co-doping technology, which is applied in the direction of photosensitive equipment, electrolytic capacitor manufacturing, electrolytic capacitors, etc., can solve the problems of low energy conversion efficiency and achieve the effects of improving battery performance, increasing short-circuit current, and improving photoelectric conversion efficiency

Inactive Publication Date: 2019-03-29
CHINA THREE GORGES UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But current energy conversion efficiencies using dye-sensitized solar cells (DSSCs) are still low

Method used

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  • Method for preparing nitrogen and iodine co-doped titanium dioxide barrier layer
  • Method for preparing nitrogen and iodine co-doped titanium dioxide barrier layer
  • Method for preparing nitrogen and iodine co-doped titanium dioxide barrier layer

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preparation example Construction

[0020] The preparation method of nitrogen and iodine co-doped barrier layer comprises the following steps:

[0021] Step 1. Under ice bath conditions, take absolute ethanol, add diethanolamine and tetrabutyl titanate, mix and stir evenly as precursor solution A, and stir for 60 minutes.

[0022] Step 2, using urea as the nitrogen source for reaction doping, and elemental iodine as the doping source of iodine, adding a certain amount of urea and elemental iodine to a mixed solvent of deionized water and absolute ethanol and mixing it uniformly as a reaction solution B liquid, Add the reaction solution B dropwise to the prepared precursor solution A, and use a magnetic stirrer to mix the solution evenly, fully stir and react for 24 hours, and obtain a transparent light yellow colloidal solution C.

[0023] Step 3, take 1ml of colloidal solution C and drop it on the cleaned FTO conductive surface, put the FTO on the homogenizer whose parameters are set to rotate at a low speed of...

Embodiment 1

[0026] A method for preparing an undoped barrier layer, the process flow is as follows:

[0027] Step 1. Under ice bath conditions, take 105ml of absolute ethanol, add 8.25ml of diethanolamine and 34ml of tetrabutyl titanate, mix and stir evenly as the precursor solution A, and stir for 60min.

[0028] Step 2, mix 1.8ml of deionized water and 50ml of absolute ethanol mixed solvent evenly and use it as the reaction solution B, add the reaction solution B dropwise to the prepared precursor solution A, and use a magnetic stirrer to make The solution was mixed evenly, fully stirred and reacted for 24 hours, and a transparent light yellow colloidal solution C was obtained.

[0029] Step 3, take 1ml of colloidal solution C and drop it on the cleaned FTO conductive surface, put the FTO on the homogenizer whose parameters are set to rotate at a low speed of 800r / min for 12s and at a high speed of 2600r / min for 30s, and let it form a film and placed in an oven for drying at 60°C, and ...

Embodiment 2

[0031] A method for preparing a nitrogen-doped barrier layer, the process flow of which is as follows:

[0032] Step 1. Under ice bath conditions, take 105ml of absolute ethanol, add 8.25ml of diethanolamine and 34ml of tetrabutyl titanate, mix and stir evenly as the precursor solution A, and stir for 60min.

[0033] Step 2, use urea as the nitrogen source for reaction doping, add 0.059g of urea to 1.8ml of deionized water and 50ml of anhydrous ethanol mixed solvent and mix evenly as the reaction solution B solution, drop the reaction solution B solution drop by drop Add it to the prepared precursor solution A, and use a magnetic stirrer to mix the solution evenly, and fully stir and react for 24 hours to prepare a transparent light yellow colloidal solution C.

[0034] Step 3, take 1ml of colloidal solution C and drop it on the cleaned FTO conductive surface, put the FTO on the homogenizer whose parameters are set to rotate at a low speed of 800r / min for 12s and at a high spe...

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Abstract

The invention provides a nitrogen and iodine co-doped titanium dioxide barrier layer and a method for preparing same. The method comprises: under an ice bath condition, mixing and stirring tetrabutyllipid titanate and absolute ethanol, and diethanolamine for 1 hour and then using as a precursor liquid A; then, using deionized water and absolute ethanol as reaction solvents, and adding certain amount of urea and iodine, uniformly stirring to prepare a B solution, and adding the B solution to the precursor A liquid dropwise, rapidly stirring for 24 hours to obtain a colloidal solution C liquid;dropping the C liquid on a cleaned FTO conductive surface, using a spin coater to prepare a titanium dioxide film by spin coating, and sintering at 500 DEG C for 30 minutes in a muffle furnace to obtain a high-efficiency nitrogen and iodine co-doped titanium dioxide barrier layer. The barrier layer can effectively reduce recombination of electron hole pairs and improve light quantum conversion efficiency (IPCE) of a battery. The barrier layer can obviously open circuit voltage and short circuit current of a solar cell when the barrier layer is used for a quasi-solid-state dye-sensitized solarcell, and photoelectric conversion efficiency of the battery can reach 6.65%.

Description

technical field [0001] The invention relates to the technical field of preparation of titanium dioxide barrier layer materials for solar cells, in particular to a nitrogen and iodine co-doped TiO 2 Barrier layer and method for its preparation. Background technique [0002] In the field of solar cells, although the total energy conversion efficiency of traditional silicon solar cells has reached more than 24%, the complex processing technology, high cost and pollution caused by by-products seriously limit its practical production and application. Facing the increasingly severe energy and environmental crisis, dye-sensitized solar cells (DSSCs) with simple structure, low cost and no pollution are favored. However, the current energy conversion efficiency using dye-sensitized solar cells (DSSCs) is still low. How to improve the energy conversion efficiency of DSSC has become a big problem to be solved in DSSC. The recombination of electron-hole pairs is a major factor limiti...

Claims

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Application Information

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IPC IPC(8): H01G9/004H01G9/20H01G9/00
CPCH01G9/0029H01G9/004H01G9/20Y02E10/542
Inventor 向鹏吕福马渊文谭新玉肖婷姜礼华
Owner CHINA THREE GORGES UNIV
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