A kind of ingot crucible film and preparation method thereof
A technology of crucible and film, which is applied in chemical instruments and methods, self-solidification, electrophoretic plating, etc., to achieve high conversion efficiency, improve purity, and improve yield
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Embodiment 1
[0025] Electrophoretic Deposition of Silicon Dioxide Thin Film Containing Al Powder on the Upper Layer
[0026] The specific solution components are ultrapure water, silica sol, high-purity silica, and Al powder. The preparation of the slurry is as follows: ultrapure water, silica sol, high-purity silica (purity is 99.999%, particle diameter is 10 μm-20 μm), and Al powder are weighed in a weight ratio of 100:1:5:0.1, Put the ultrapure water, silica sol, and Al powder into the mixer and stir evenly for 30 minutes to form a stable suspension, then add high-purity silica particles and stir evenly for 30 minutes, then let it stand for later use.
[0027] When performing electrophoretic deposition of thin films, the reference process parameters are as follows: the working voltage is 10-20V, the working current is 4-5A, the solution temperature is 80°C, and the time is 30min.
[0028] The prepared crucible film, the upper layer of the film is the consistent arrangement of crystall...
Embodiment 2
[0036] Electrophoretic Deposition of Silicon Dioxide Film Containing Ni Powder on the Upper Layer
[0037] The specific solution components are ultrapure water, silica sol, silica powder, and Ni powder. The preparation of the slurry is as follows: After the ultrapure water, silica sol, silica powder (particle diameter is 10 μm-20 μm), and Ni powder are weighed in a weight ratio of 100:1:5:0.1, the ultrapure water, silica sol 1. Put the Ni powder into the mixer and stir evenly for 30 minutes to form a stable suspension, then add silicon powder (particle diameter is 10 μm-20 μm) and stir evenly for 30 minutes, then let it stand for later use.
[0038] When performing electrophoretic deposition of thin films, the reference process parameters are as follows: the working voltage is 10-20V, the working current is 4-5A, the solution temperature is 80°C, and the time is 30min.
[0039] The prepared crucible film has a silicon powder particle film thickness of 100 μm on the upper laye...
Embodiment 3
[0047] Electrophoretic Deposition of Upper Silicon Dioxide Film
[0048] The specific solution components are ultrapure water, silica sol, and high-purity silica. The preparation of the slurry is as follows: Ultrapure water, silica sol, and high-purity silica (purity 99.999%, particle diameter 10 μm-20 μm) are weighed in a weight ratio of 100:1:5, and the ultrapure water 1. Put the silica sol into a stirrer and stir evenly for 30 minutes to form a stable suspension, then add high-purity silica particles and stir evenly for 30 minutes, then let it stand for later use.
[0049] When performing electrophoretic deposition of thin films, the reference process parameters are as follows: the working voltage is 10-20V, the working current is 4-5A, the solution temperature is 80°C, and the time is 30min.
[0050] The prepared crucible film, the upper layer of the film is dense silicon dioxide particle film with a thickness of 100 μm, the middle layer of the film is a carbon fiber stru...
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