Preparation method of AlGaN-based 3D flip-chip MSM array ultraviolet detector

A UV detector and flip-chip technology, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc. Application, device manufacturing process is complex and other issues, to achieve the effect of mature flip-chip welding technology, help device heat dissipation and current output, and easy implementation

Inactive Publication Date: 2019-07-23
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Commonly used ultraviolet detectors mainly include photoconductive type, Schottky type, MSM type, PIN type, and avalanche type. The photoconductive type has relatively large photocurrent and dark current, but the ratio of photocurrent to dark current is small. Poor sensitivity; Schottky type detectors have small dark current and high sensitivity, but need an external electric field to use; MSM type detectors are simple to manufacture and have low dark current, but generally they are normal incidence, and metal electrodes will block and absorb part of the light; PIN type

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  • Preparation method of AlGaN-based 3D flip-chip MSM array ultraviolet detector
  • Preparation method of AlGaN-based 3D flip-chip MSM array ultraviolet detector
  • Preparation method of AlGaN-based 3D flip-chip MSM array ultraviolet detector

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preparation example Construction

[0036] The invention provides a method for preparing an AlGaN-based 3D flip-chip MSM array ultraviolet detector, comprising the following steps:

[0037] (1) Epitaxial growth of Al on the substrate 1 X Ga 1-X N ultraviolet light absorbing layer 2;

[0038] (2) in Al X Ga 1-X Perform photolithography on the N ultraviolet light absorbing layer 2, and etch grooves;

[0039] (3) in Al X Ga 1-X The interdigitated electrode 3 is deposited in the groove of the N ultraviolet light absorbing layer. The interdigitated electrode 3 includes the left interdigitated electrode 301 and the right interdigitated electrode 302. Both ends of the two interdigitated electrodes are provided with large-area pad areas, such as Figure 2-3 As shown, the ultraviolet detector is obtained;

[0040] (4) polishing the back side of the substrate 1;

[0041] (5) On the substrate 6, the substrate circuit 5 is fabricated by using a layout;

[0042] (6) Make soldering micro-bumps 4 on the substrate circ...

Embodiment 1

[0045] The invention provides an AlGaN-based ultraviolet detector and a preparation method thereof, comprising the following steps:

[0046] (1) Choose a plane (0001) plane sapphire with a diameter of 2 inches as the substrate, with a thickness of about 400 μm, and grow Al on the sapphire by MOCVD method 0.32 Ga 0.68 The N ultraviolet absorbing layer has a thickness of about 400nm, in which the Al composition is 0.32, and the forbidden band width of AlGaN with an Al composition of 0.32 corresponds to the wavelength of ultraviolet light to be detected. TMAl and TMGa are respectively used as Al source and Ga source, and silane SiH 4 As a Si source, the Al 0.32 Ga 0.68 Doping of N UV-absorbing layer, Al 0.32 Ga 0.68 The band gap of N corresponds to the wavelength of the ultraviolet light to be detected, which is about 280nm;

[0047] (2) in Al0.32 Ga 0.68 Photolithography is carried out on the surface of the N ultraviolet light absorbing layer, and the interdigitated electr...

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Abstract

The invention discloses a preparation method of an AlGaN-based 3D flip-chip MSM array ultraviolet detector, and belongs to the technical field of semiconductors; the preparation method comprises the following steps of (1) growing an AlXGa1-XN ultraviolet light absorption layer on a substrate in an epitaxial growth manner; (2) performing photoetching on the AlXGa1-XN ultraviolet light absorption layer to form a groove; (3) depositing an interdigital electrode in the groove of the AlXGa1-XN ultraviolet light absorption layer; (4) polishing the back surface of the substrate; (5) manufacturing a substrate circuit by adopting a layout on the substrate; (6) manufacturing a welding micro-convex point on the substrate circuit; and (7) enabling the ultraviolet detector to be inverted, and enablingpad regions at the two ends of the interdigital electrode to be connected with the micro-convex point in a welding mode. The method is simple in manufacturing process, mature in flip welding technology, low in cost and easy to implement, and large-scale popularization can be realized; and the interdigital electrodes are deposited in the grooves in the absorption layer, so that the migration time of the photo-generated carriers is shortened, the migration speed and the collecting efficiency of the carriers are improved under the action of an external electric field, the sensitivity of the detector is improved, and the response time is shortened.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a preparation method of an AlGaN-based ultraviolet detector, in particular to a preparation method of an AlGaN-based 3D flip-chip welding MSM array ultraviolet detector. Background technique [0002] Ultraviolet detectors are widely used in ultraviolet radiation measurement, ozone monitoring, air pollution monitoring, space communication, aircraft guidance, blood analysis, mercury lamp disinfection monitoring and other fields. Commonly used ultraviolet detectors mainly include photoconductive type, Schottky type, MSM type, PIN type, and avalanche type. The photoconductive type has relatively large photocurrent and dark current, but the ratio of photocurrent to dark current is small. Poor sensitivity; Schottky type detectors have small dark current and high sensitivity, but need an external electric field to use; MSM type detectors are simple to manufacture and have low dark ...

Claims

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Application Information

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IPC IPC(8): H01L31/108H01L31/0224H01L31/0236H01L31/0304H01L31/18
CPCH01L31/022408H01L31/02363H01L31/03048H01L31/1085H01L31/1848Y02P70/50
Inventor 汪炼成李滔林蕴
Owner CENT SOUTH UNIV
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