Preparation method of AlGaN-based 3D flip-chip MSM array ultraviolet detector

Abstract

The invention discloses a preparation method of an AlGaN-based 3D flip-chip MSM array ultraviolet detector, and belongs to the technical field of semiconductors; the preparation method comprises the following steps of (1) growing an AlXGa1-XN ultraviolet light absorption layer on a substrate in an epitaxial growth manner; (2) performing photoetching on the AlXGa1-XN ultraviolet light absorption layer to form a groove; (3) depositing an interdigital electrode in the groove of the AlXGa1-XN ultraviolet light absorption layer; (4) polishing the back surface of the substrate; (5) manufacturing a substrate circuit by adopting a layout on the substrate; (6) manufacturing a welding micro-convex point on the substrate circuit; and (7) enabling the ultraviolet detector to be inverted, and enablingpad regions at the two ends of the interdigital electrode to be connected with the micro-convex point in a welding mode. The method is simple in manufacturing process, mature in flip welding technology, low in cost and easy to implement, and large-scale popularization can be realized; and the interdigital electrodes are deposited in the grooves in the absorption layer, so that the migration time of the photo-generated carriers is shortened, the migration speed and the collecting efficiency of the carriers are improved under the action of an external electric field, the sensitivity of the detector is improved, and the response time is shortened.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a preparation method of an AlGaN-based ultraviolet detector, in particular to a preparation method of an AlGaN-based 3D flip-chip welding MSM array ultraviolet detector. Background technique [0002] Ultraviolet detectors are widely used in ultraviolet radiation measurement, ozone monitoring, air pollution monitoring, space communication, aircraft guidance, blood analysis, mercury lamp disinfection monitoring and other fields. Commonly used ultraviolet detectors mainly include photoconductive type, Schottky type, MSM type, PIN type, and avalanche type. The photoconductive type has relatively large photocurrent and dark current, but the ratio of photocurrent to dark current is small. Poor sensitivity; Schottky type detectors have small dark current and high sensitivity, but need an external electric field to use; MSM type detectors are simple to manufacture and have low dark ...

AI Technical Summary

Problems solved by technology

Commonly used ultraviolet detectors mainly include photoconductive type, Schottky type, MSM type, PIN type, and avalanche type. The photoconductive type has relatively large photocurrent and dark current, but the ratio of photocurrent to dark current is small. Poor sensitivity; Schottky type detectors have small dark current and high sensitivity, but need an external electric field to use; MSM type detectors are simple to manufacture and have low dark current, but generally they are normal incidence, and metal electrodes will block and absorb part of the light; PIN type detectors have high responsivity and sensitivity, but the device manufacturing process is complicated; avalanche type detectors need to apply a large reverse bias electric field

Since the photocurrent of semiconductor ultraviolet detectors is generally small, when a single small device is detected, factors such as the fixation of the device, the position of the I / O electrode, and the small detection current will reduce the signal-to-noise ratio, responsivity and sensitivity of the ultraviolet detector, thereby Restricting the large-scale application of ultraviolet detectors

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