Layered tungsten trioxide photoelectrode material and preparation method thereof

A technology of tungsten trioxide and photoelectrode, which is applied in the direction of tungsten oxide/tungsten hydroxide, circuits, electrical components, etc., to achieve the effects of improving transmission efficiency, accelerating conduction, and simple and easy operation methods

Inactive Publication Date: 2019-07-26
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no relevant report about layered tungsten trioxide. The multilayer structure of tungsten trioxide has a large specific surface area, which

Method used

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  • Layered tungsten trioxide photoelectrode material and preparation method thereof
  • Layered tungsten trioxide photoelectrode material and preparation method thereof
  • Layered tungsten trioxide photoelectrode material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0023] (1) Pretreatment of FTO: FTO was ultrasonically cleaned with acetone, a mixed solution of isopropanol and water (volume ratio 1:1:1), and deionized water for 30 min, respectively, and dried at 70 °C for later use.

[0024] (2) Weigh 330 mg of sodium tungstate, add it to 20 mL of deionized water, stir at room temperature for 15 min, add 0.5 mL of hydrogen peroxide solution (mass fraction is 30 %) under stirring condition, mix well, Stir at room temperature for 10 min; then add 0.4 mL of hydrochloric acid solution (36% mass fraction) to the mixed solution, white smoke comes out, stir at room temperature for 10 min; then add 0.05 g of oxalic acid to the mixed solution, Stir at room temperature for 15 min; finally add 10 mL of absolute ethanol and stir at room temperature for 15 min to obtain a clear and transparent precursor solution.

[0025] (3) Transfer the prepared precursor liquid to the polytetrafluoroethylene reactor, and immerse two pieces of FTO in the precursor l...

Embodiment 2

[0033](1) Pretreatment of FTO: FTO was ultrasonically cleaned with acetone, a mixed solution of isopropanol and water (volume ratio 1:1:1), and deionized water for 30 min, respectively, and dried at 70 °C for later use.

[0034] (2) Weigh 250 mg of tungstic acid, add it to 19 mL of deionized water, stir at room temperature for 10 min, add 1.0 mL of hydrogen peroxide solution (mass fraction: 30 %) under stirring condition, mix well, and Stir at room temperature for 10 min; then add 1.4 mL of hydrochloric acid solution (mass fraction 36 %) to the mixed solution, white smoke comes out, stir at room temperature for 10 min; then add 62 mg of oxalic acid to the mixed solution, Stir at room temperature for 20 min; finally add 15 mL of absolute ethanol and stir at room temperature for 10 min to obtain a light yellow precursor solution.

[0035] (3) Transfer the prepared precursor liquid to the polytetrafluoroethylene reactor, and immerse two pieces of FTO in the precursor liquid symme...

Embodiment 3

[0039] (1) Pretreatment of FTO: FTO was ultrasonically cleaned with acetone, a mixed solution of isopropanol and water (volume ratio 1:1:1), and deionized water for 30 min, respectively, and dried at 70 °C for later use.

[0040] (2) Weigh 330 mg of sodium tungstate, add it to 20 mL of deionized water, stir at room temperature for 20 minutes, add 0.5 mL of hydrogen peroxide solution (mass fraction: 30%) under stirring conditions, mix well, and Stir at room temperature for 10 min; then add 0.35 mL of hydrochloric acid solution (mass fraction 36 %) to the mixed solution, white smoke comes out, stir at room temperature for 10 min; then add 15 mg of oxalic acid to the mixed solution, Stir at room temperature for 15 min; finally add 10 mL of absolute ethanol and stir at room temperature for 10 min to obtain a clear and transparent precursor solution.

[0041] (3) Transfer the prepared precursor liquid to the polytetrafluoroethylene reactor, and immerse two pieces of FTO in the prec...

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Abstract

The invention discloses a layered tungsten trioxide photoelectrode material and a preparation method thereof and belongs to the technical field of inorganic photoelectric materials. The method includes: using a solvothermal method to grow a tungsten trioxide film on conductive glass FTO to obtain a substrate, and subjecting the substrate to annealing to obtain the layered tungsten trioxide photoelectrode. The method is specifically characterized in that a tungsten source is used as the raw material, the mixed solution of water and ethanol is used as the solvent, and hydrogen peroxide, hydrochloric acid and oxalic acid are added while stirring; the FTO substrate is used as the carrier, tungsten trioxide crystals are grown on the FTO substrate through the solvothermal method, and calcining is performed to obtain a layered tungsten trioxide film. The preparation method is simple, practicable and good in repeatability, and the tungsten trioxide can evenly grow on the surface of FTO; the prepared layered tungsten trioxide photoelectrode has a multilayer structure, so that the photoelectrode and electrolyte have large enough contact area, charge transfer efficiency is increased effectively, photo-induced charge separation is promoted, and the photoelectrochemical property of the tungsten trioxide photoelectrode is increased.

Description

technical field [0001] The invention belongs to the technical field of inorganic photoelectric materials, and in particular relates to a layered tungsten trioxide photoelectrode material and a preparation method thereof. Background technique [0002] Tungsten trioxide is an n-type indirect bandgap semiconductor material with an energy band structure that matches sunlight (E g = 2.5-2.8 eV), proper hole diffusion distance (~ 150 nm), and faster electron mobility (about 12 cm 2 V -1 the s -1 ). At the same time, tungsten trioxide has a higher valence band energy level of 3.0 eV (vs. NHE), which is larger than that of O 2 / H 2 O (1.23 V vs. NHE) redox potential, so its photogenerated holes have strong oxidation ability. [0003] In addition, tungsten trioxide has high stability under medium pH conditions, good electrical conductivity, and resistance to photoelectrochemical corrosion. Due to these excellent characteristics, tungsten trioxide has become one of the best p...

Claims

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Application Information

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IPC IPC(8): C01G41/02H01L31/032
CPCC01G41/02C01P2002/72C01P2002/84C01P2006/40H01L31/032
Inventor 冯苗彭湃陈小宇
Owner FUZHOU UNIV
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