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A kind of preparation method of vanadium oxide film

A vanadium oxide thin film and seed layer technology, which is applied in gaseous chemical plating, vacuum evaporation plating, coating, etc., can solve the problem of poor uniformity of vanadium oxide thin film sheet resistance, unfavorable product quality consistency, and poor film uniformity, etc. problems, to achieve high practical value, suitable for large-scale production, and good uniformity

Active Publication Date: 2021-08-03
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0004] A single vanadium oxide film is used as thermistor material, mainly VO 2 film, due to VO 2 The sheet resistance of the thin film is easily affected by various factors such as substrate temperature, crystallization degree, vanadium oxide crystal orientation distribution, valence distribution and other factors during the preparation process, resulting in poor uniformity of internal resistance of the prepared vanadium oxide thin film, which is not conducive to Product Quality Consistency
In addition, for the thicker vanadium oxide film, during the deposition process, with the prolongation of the deposition time, the film resistivity will be significantly smaller, and the film uniformity will also be poor, which exceeds the product's requirements for resistance and will also cause Decrease in TCR

Method used

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  • A kind of preparation method of vanadium oxide film
  • A kind of preparation method of vanadium oxide film
  • A kind of preparation method of vanadium oxide film

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Embodiment 1

[0030] figure 1 A flow diagram of fabricating a microelectrode structure according to a disclosed embodiment of the present invention is shown.

[0031] In this embodiment, the preparation method of vanadium oxide thin film comprises:

[0032]S101, providing a substrate. In this embodiment, the substrate can be various forms of substrates, including but not limited to semiconductor material substrates (such as bulk Si substrates), compound semiconductor substrates (such as SiC substrates), alloy semiconductor substrates (such as SiGe substrate), etc. In some embodiments, the semiconductor substrate may include a doped epitaxial layer.

[0033] S102, forming a dielectric layer on the substrate. A dielectric layer is deposited on the above substrate. In some embodiments, the dielectric layer includes any one or a combination of insulating materials among silicon nitride, silicon dioxide, and silicon carbide, and mainly functions as an insulating layer. In some embodiments, ...

Embodiment 2

[0038] S101, providing a substrate. In this embodiment, the substrate may be in various forms, and in this embodiment, the substrate is preferably a Si substrate.

[0039] S102, forming a dielectric layer on the substrate. A dielectric layer is deposited on the above substrate. In this embodiment, the dielectric layer is preferably silicon nitride as the dielectric layer (that is, the insulating layer), which mainly plays an insulating role. In this embodiment, the dielectric layer is mainly formed by chemical vapor deposition technology; the specific process conditions of chemical vapor deposition are as follows: deposition temperature 250°C, RF power 400W, SiH4: 300sccm, N2: 4000sccm, NH3: 100sccm, pressure: 5Torr_ .

[0040] S103, preheating the substrate. The preheating temperature for preheating the substrate is preferably 200° C., and the preheating time is preferably 5 minutes.

[0041] S104, using the magnetron sputtering method to form a vanadium oxide thin film s...

Embodiment 3

[0044] S101, providing a substrate. In this embodiment, the substrate may be in various forms, and in this embodiment, the substrate is preferably a silicon substrate.

[0045] S102, forming a dielectric layer on the substrate. A dielectric layer is deposited on the above substrate. In this embodiment, the dielectric layer is preferably silicon dioxide as the dielectric layer (that is, the insulating layer), which mainly plays an insulating role. In this embodiment, the dielectric layer is mainly formed by chemical vapor deposition technology; the specific process conditions of chemical vapor deposition are as follows: deposition temperature 250° C., RF power 400 W, SiH4: 35 sccm, N2O: 1200 sccm, pressure: 2.7 Torr_.

[0046] S103, preheating the substrate. The preheating temperature for preheating the substrate is preferably 150° C., and the preheating time is preferably 5 minutes.

[0047] S104. Using the magnetron sputtering method, a vanadium oxide thin film seed layer ...

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Abstract

The invention proposes a method for preparing a vanadium oxide thin film, which is characterized in that it includes: providing a substrate; depositing a dielectric layer on the substrate; preheating the substrate; using magnetron sputtering method, A vanadium oxide thin film seed layer is formed on the dielectric layer, and the process conditions for forming the vanadium oxide thin film seed layer are as follows: RF sputtering power is 500-1000W, oxygen flow is 6-10sccm, argon flow is 50sccm, and working pressure is 0.1-3Pa, the substrate temperature is 150-250°C; keep the other process conditions of magnetron sputtering unchanged, gradually and continuously fine-tune the oxygen flow rate to a predetermined value, and deposit a vanadium oxide film on the seed layer of the vanadium oxide film to a specified thickness , wherein the continuous fine-tuning of the oxygen flow step is 0.1-1sccm, and the duration of each step is 1-30 seconds. After fine-tuning the oxygen to a predetermined value, keep it for a certain period of time to deposit a vanadium oxide film to a specified thickness. By adopting the method of the invention, the deposited vanadium oxide film has the advantages of a single and uniform film structure, and the preparation method is simple and easy to operate, suitable for large-scale production, and has high practical value.

Description

technical field [0001] The invention relates to the technical field of uncooled infrared detection, in particular to a preparation method of a vanadium oxide thin film. Background technique [0002] Infrared detectors convert invisible infrared heat radiation into detectable electrical signals to realize the observation of external affairs. Infrared detectors are divided into two categories: quantum detectors and thermal detectors. Thermal detectors are also called uncooled infrared detectors. Uncooled infrared detectors have the advantages of low cost, no refrigeration, and can work at room temperature. They have the advantages of good stability, high integration, and low price. They are used in military, commercial and civilian applications. and other fields have broad application prospects. Uncooled infrared detectors mainly include three types: pyroelectric, thermocouple, and thermistor. Among them, the microbolometer focal plane detector based on thermistor is based o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35C23C16/40
CPCC23C14/083C23C14/35C23C16/402
Inventor 高建峰李俊峰刘卫兵赵超王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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