Surface acoustic wave device based on hafnium ferroelectric film and film bulk acoustic wave device

Abstract

The invention discloses a surface acoustic wave device based on a hafnium ferroelectric film and a film bulk acoustic wave device, the surface acoustic wave device comprises any one or two of a resonance / filtering assembly and a sensing assembly which are integrated on a substrate, and each assembly comprises a bottom electrode layer, a piezoelectric layer and a top electrode layer which are stacked in sequence; the film bulk acoustic wave device comprises any one or two of a resonance / filtering assembly and a sensing assembly which are integrated on a substrate, and each assembly comprises abottom electrode layer, a piezoelectric layer and a top electrode layer which are stacked in sequence; the piezoelectric layers in the two types of acoustic wave devices are respectively prepared fromhafnium ferroelectric films doped with zirconium, aluminum or silicon by using an atomic layer deposition process. Two types of sound wave devices and storage devices can be prepared on the hafnium ferroelectric film, environmental perception, signal processing and storage can be integrated, and the integration degree and the working speed of electronic equipment can be improved.

Description

technical field [0001] The invention belongs to the field of electronic technology, and in particular relates to a surface acoustic wave device and a thin film bulk acoustic wave device based on a hafnium series ferroelectric thin film. Background technique [0002] With the vigorous development of the Internet of Things technology, intelligent electronic devices connected to the Internet of Things perceive various information in the environment through various sensors, and then send the perceived information to the processing unit for data analysis, processing and storage. Especially for intelligent driving, the relevant sensors perceive complex road conditions, and while collecting massive amounts of road condition information, signal processing and storage must also be completed. However, for conventional electronic equipment, environmental sensing, signal processing and data storage are separate and different parts, and a data transmission channel is required to transmit...

AI Technical Summary

Problems solved by technology

[0004] In terms of signal processing, resonators and filters based on surface acoustic waves and thin film bulk acoustic waves have been widely used in communication equipment such as smartphones and mobile base stations. At present, the piezoelectric material used for surface acoustic waves is mainly lithium niobate , lithium tantalate and other bulk materials and thin film materials such as aluminum nitride and zinc oxide. The piezoelectric materials used for thin film bulk acoustic wave devices are mainly aluminum nitride and zinc oxide thin films, of which lithium niobate, lithium tantalate and zinc oxide cannot It is compatible with the mainstream CMOS process, so it cannot be integrated with the corresponding chip system; although the aluminum nitride material is compatible with the CMOS process, it cannot be used in the storage field, so it cannot achieve system integration

[0005] In terms of environmental sensing, sensors based on surface acoustic wave devices and thin-film bulk acoustic wave devices have been widely used in detecting temperature, humidity, force, light, and chemical gases due to their advantages of fast response and high sensitivity. These sensors based on surface acoustic wave devices and thin film bulk acoustic wave devices are discrete devices that need to occupy a certain amount of space in the entire system and require specific interconnections, so the integration of the system cannot be further improved

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