Preparation method and application of ultrafine phosphorous-doped porous silicon nanomaterial
A technology of nanomaterials and phosphorus doping, applied in the field of preparation of porous silicon nanomaterials, can solve the problems of particle size limitation, small volume effect, high cost, etc., and achieve controllable production process, simple preparation method and low cost Effect
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Embodiment 1
[0032] 1) Ball mill n-type silicon wafers to powder particles of 5-10 μm, grind and mix with 400-mesh metal magnesium powder, heat treatment at 700 °C for 6 hours at a heating rate of 5 °C / min in a vacuum state;
[0033] 2) After the reaction product in step 1) is cooled to room temperature, continue to pass in an oxygen / argon mixed gas containing 10% oxygen by volume, heat treatment at 700°C for 5 hours at a heating rate of 5°C / min;
[0034] 3) Rinse the product obtained in step 2) with hydrochloric acid with a concentration of 1mol / L for 3 hours, completely remove the reaction impurities, take it out, wash it in deionized water for 20 minutes, centrifuge, and then rinse it with hydrofluoric acid with a concentration of 1% by mass for 30 minutes. After the reaction product was centrifuged and washed three times with deionized water, it was vacuum-dried at 65° C. into powder.
[0035] figure 1 X-ray diffraction pattern (bottom curve) of the silicon / silicon-magnesium alloy com...
Embodiment 2
[0038] 1) Ball mill n-type silicon wafers to powder particles of 5-10 μm, grind and mix with 400 mesh metal magnesium powder, heat treatment at 650 °C for 4 hours at a heating rate of 5 °C / min in a vacuum state;
[0039] 2) After the reaction product in step 1) is cooled to room temperature, continue to pass in an oxygen / argon mixed gas containing 10% oxygen by volume, heat treatment at 700°C for 5 hours at a heating rate of 5°C / min;
[0040] 3) Rinse the product obtained in step 2) with hydrochloric acid with a concentration of 1mol / L for 3 hours, completely remove the reaction impurities, take it out, wash it in deionized water for 20 minutes, centrifuge, and then rinse it with hydrofluoric acid with a concentration of 1% by mass for 30 minutes. After the reaction product was centrifuged and washed three times with deionized water, it was vacuum-dried at 65° C. into powder.
[0041] figure 1 The X-ray diffraction pattern (middle curve) of the silicon / silicon-magnesium alloy...
Embodiment 3
[0044] 1) Ball mill n-type silicon wafers to powder particles of 5-10 μm, grind and mix with 400-mesh metal magnesium powder, and heat-treat at 600 °C for 5 hours at a heating rate of 5 °C / min in a vacuum state;
[0045] 2) After the reaction product in step 1) is cooled to room temperature, continue to pass in an oxygen / argon mixed gas containing 10% oxygen by volume, heat treatment at 700°C for 5 hours at a heating rate of 5°C / min;
[0046] 3) Rinse the product obtained in step 2) with hydrochloric acid with a concentration of 1mol / L for 3 hours, completely remove the reaction impurities, take it out, wash it in deionized water for 20 minutes, centrifuge, and then rinse it with hydrofluoric acid with a concentration of 1% by mass for 30 minutes. After the reaction product was centrifuged and washed three times with deionized water, it was vacuum-dried at 65° C. into powder.
[0047] figure 1 and figure 2 d is the X-ray diffraction pattern (top curve) of the silicon / silico...
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