Preparation method of titanium dioxide/dinickel phosphide heterojunction visible-light photocatalyst with defects

A titanium dioxide and visible light technology, which is applied in the preparation and application of nanomaterials, can solve the problems of large band gap, low utilization rate of visible light, rapid compounding hindering the application of semiconductors, etc., and achieve the effect of simple equipment, environmentally friendly process and low cost

Inactive Publication Date: 2020-01-14
JILIN NORMAL UNIV
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Problems solved by technology

But due to TiO 2 The semiconductor has a large band gap, and its utilization rate of visible light is very low. In addition, the rapid recombination of photogenerated electron-hole pairs also hinders the TiO 2 Applications of semiconductors as highly efficient photocatalysts

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  • Preparation method of titanium dioxide/dinickel phosphide heterojunction visible-light photocatalyst with defects
  • Preparation method of titanium dioxide/dinickel phosphide heterojunction visible-light photocatalyst with defects
  • Preparation method of titanium dioxide/dinickel phosphide heterojunction visible-light photocatalyst with defects

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Embodiment Construction

[0022] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] A defective TiO 2 / Ni 2 A method for preparing a P heterojunction visible light catalyst, the method comprising the following steps:

[0024] The purpose of the present invention is achieved like this: a kind of TiO with defect 2 / Ni 2 A method for preparing a P heterojunction visible light catalyst, the method comprising the following steps:

[0025] Step one, Ni 2+ Doped modified TiO 2 Preparation of nanostructures:

[0026] ①. Weigh 1.6g of poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) (referred to as F127, M.W.100000) solid, add F127 to 30mL absolute ethanol solvent, at 60 Stir at ℃ for 30min, and the rotation speed is 400rpm, so that F127 is fully dissolved to form solution A;

[0027] ②. Add 0.2 g nickel acetate tetrahydrate (Ni(Ac) 2 4H 2 O) solid, stirred at room temperature for 5min, a...

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Abstract

The invention discloses a preparation method of a TiO2/Ni2P heterojunction visible-light photocatalyst with defects, and belongs to the technical field of preparation and application of nano materials. The preparation method comprises the following steps: firstly, doping Ni < 2 + > into semiconductor TiO2 for artificial introduction of surface oxygen defects, carrying out solid phase thermal reduction to realize reduction precipitation of a part of Ni < 2 + > in crystal lattices, and loading on the surface of TiO2; carrying out phosphating treatment to form the TiO2/Ni2P heterojunction visible-light photocatalyst with defects. Because of Ni doping and introduction of surface oxygen defects, TiO2 band gap is narrowed, the light absorption range is expanded to a visible light region. The H2yield in unit time is used for evaluating the catalytic performance of the catalyst. The method is simple, environment-friendly and high in catalytic efficiency; the catalyst has potential applicationvalue in the aspect of hydrogen production through visible light catalytic water decomposition.

Description

technical field [0001] The invention belongs to the field of preparation and application of nanomaterials, and in particular relates to a defective titanium dioxide / nickel phosphide (TiO 2 / Ni 2 P) Preparation method of heterojunction visible light catalyst. Background technique [0002] With the rapid development of industry, the "greenhouse effect" caused by the combustion of fossil fuels such as oil and coal, environmental pollution caused by acid rain, and energy shortages have attracted widespread attention from researchers around the world. In recent years, semiconductor photocatalytic technology has been extensively researched and developed due to its environmental friendliness and less pollution, among which TiO 2 Because of its high photocatalytic activity, chemical stability, and low toxicity, it has become one of the most widely used semiconductor materials. But due to TiO 2 The semiconductor has a large band gap, and its utilization rate of visible light is v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/185C01B3/04
CPCB01J27/1853B01J35/004C01B3/042C01B2203/0277C01B2203/1058Y02E60/36
Inventor 孙德武翟宏菊李佳昕赵钊关壬铨宋沐遥李铭新李晓慧
Owner JILIN NORMAL UNIV
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