Oxide-metal composite electron transport layer manufactured based on solution method and crystalline silicon solar cell including oxide-metal composite electron transport layer
An electron transport layer and oxide layer technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as effective cost reduction, and achieve cost-effective, low-cost, and low-cost effects
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[0050] When the material used in the oxide layer in the composite electron transport layer is tin oxide, its preparation method comprises the following steps:
[0051] First, configure the tin oxide sol solution;
[0052] Second, prepare a tin oxide sol thin film on the back of the single crystal silicon substrate covering the passivation layer;
[0053] Third, annealing evaporates the solvent to form a tin oxide electron transport layer;
[0054] Fourth, a layer of magnesium metal is deposited on the surface of tin oxide through a thermal evaporation device.
[0055] Preferably, the solvent is deionized water, the solute is tin oxide colloid with a concentration of 2% wt, the solution is stirred evenly at room temperature, and the tin oxide sol solution is obtained after filtering with a filter head with a pore size of 0.45 μm.
[0056] The methods for preparing tin oxide sol films include spin coating, spray coating, doctor blade coating and spray pyrolysis. The method fo...
Embodiment 1
[0088] see figure 1 As shown, the preparation method of the composite electron transport layer prepared by the solution method and the crystalline silicon solar cell comprising it comprises the steps:
[0089] (1) Choose a Czochralski monocrystalline silicon wafer with a size of 1 x 1 cm2, n-type doping, crystal orientation, resistivity 1-7 Ω·cm, and a thickness of about 190 μm. Remove the damaged layer, and use wet etching to form a pyramid array on the surface of the silicon wafer, select one side as the front side, and the other side as the back side. Such as figure 1 Shown in 5.
[0090] (2) Using plasma-enhanced chemical vapor deposition (PECVD), deposit a 7nm intrinsic amorphous silicon film on the front of the sample, such as figure 1 Shown in 4.
[0091] (3) Using the PECVD method, deposit a 10nm p-type amorphous silicon film on the front side of the sample, such as figure 1 Shown in 3.
[0092] (4) Cover the p-type amorphous silicon film on the front of the sam...
Embodiment 2
[0103] see figure 1 As shown, the preparation method of the composite electron transport layer prepared by the solution method and the crystalline silicon solar cell comprising it comprises the steps:
[0104] (1) Choose a Czochralski monocrystalline silicon wafer with a size of 1 x 1 cm2, n-type doping, crystal orientation, resistivity 1-7 Ω·cm, and a thickness of about 190 μm. Remove the damaged layer, and use wet etching to form a pyramid array on the surface of the silicon wafer, select one side as the front side and the other side as the back side. Such as figure 1 Shown in 5.
[0105] (2) Using plasma-enhanced chemical vapor deposition (PECVD), deposit a 7nm intrinsic amorphous silicon film on the front of the sample, such as figure 1 Shown in 4.
[0106] (3) Using the PECVD method, deposit a 10nm p-type amorphous silicon film on the front side of the sample, such as figure 1 Shown in 3.
[0107] (4) Cover the p-type amorphous silicon film on the front of the samp...
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