Surface plasmon-enhanced ingan/gan multiple quantum well photoelectrode and preparation method thereof
A surface plasmon, multiple quantum well technology, applied in the field of solar cells, can solve the problems of little research, accelerated electron-hole pair separation, etc., to achieve the effect of improving efficiency, improving light absorption ability, and improving efficiency
Active Publication Date: 2021-03-23
GX OPTOELECTRONIC TECH INST CO LTD
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Problems solved by technology
[0004] There are many studies on surface plasmon-enhanced solar photoelectrochemical cell efficiency, but there are not many studies on the coupling of InGaN-based semiconductor materials and plasmonic metals. How to use the plasmon effect to increase InGaN / GaN multi-quantum well solar energy It is a difficult point to accelerate the separation of electron-hole pairs by using the built-in electric field formed by the high doping concentration of the p-n region while maintaining the efficiency of photoelectrochemical cells.
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Embodiment 1
[0050] The preparation method of this solar photoelectrochemical cell, its step comprises:
[0051] A1, the InGaN / GaN multi-quantum well LED substrate (such as an InGaN / GaN multi-quantum well LED substrate with an In composition of 0.3, an emission wavelength of 510nm, and a quantum well period of 10 figure 1 As shown, it includes an n-type GaN layer 3 with a thickness of 2 μm, an In layer with a period number of 10 and a thickness of 150 nm x Ga 1-x N / GaN quantum well active layer 4 (the thickness of the InGaN well layer is 3nm, the thickness of the GaN barrier layer is 12nm) and the p-type GaN layer 5 with a thickness of 500nm) grows a layer of 200nm thick SiO 2 Dielectric film layer 6, such as figure 2 As shown, a 10nm thick Ni metal film layer 7 was vapor-deposited on SiO 2 The surface of layer dielectric film 6, such as image 3 shown;
[0052] A2. Using rapid thermal annealing technology, anneal the sample obtained in step A for 3 minutes at 850°C under a nitrogen ...
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Abstract
The invention discloses a surface plasmon enhanced InGaN / GaN multi-quantum well photoelectrode, which is etched in a substrate to form a nano-column structure that penetrates the p-GaN layer and is as deep as the multi-quantum well active layer. Plasma metal is filled between the pillars at the position of the multi-quantum well active layer. It also discloses its application as a working electrode of a solar photoelectrochemical cell, a solar photoelectrochemical cell and a preparation method thereof. The present invention adopts the top-down etching method of the self-assembled Ni mask to control the distance between the plasma metal and the multiple quantum wells, so that it can generate near-field coupling, and the electromagnetic field generated by the surface plasmon effect and the p- Under the combined action of the built-in electric field formed by the high doping concentration of the n-region, the generation and transport efficiency of the electron-hole pairs on the surface of the multi-quantum well active region is effectively improved. This method is suitable for InGaN-like photoelectrode materials with tunable bandgap and matching solar spectrum.
Description
technical field [0001] The invention relates to a surface plasmon-enhanced InGaN / GaN multi-quantum well photoelectrode, a solar photoelectrochemical cell made by using a surface plasmon-enhanced InGaN / GaN multi-quantum well photoelectrode and a preparation method thereof, belonging to The field of solar cell technology. Background technique [0002] With the rapid growth of population and economy, coal, oil, natural gas and other fossil fuels have become increasingly depleted with the intensification of development. If things go on like this, they will not be able to meet the energy needs of people's lives. Therefore, looking for new alternative energy has become the future of mankind. urgent task of development. As a green, low-carbon and environmentally friendly renewable energy, solar energy has become one of the most potential energy sources among many emerging energy sources. But so far, the utilization efficiency of solar energy is still very low, and there are certa...
Claims
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IPC IPC(8): C25B11/091C25B1/04C25B1/55C23C28/00C23C14/24C23C14/18C23C14/58C23C16/40C23C16/50C23C16/56B82Y10/00B82Y30/00
CPCB82Y10/00B82Y30/00C23C14/18C23C14/24C23C14/5806C23C16/402C23C16/50C23C16/56C25B1/04C25B1/55C25B11/051C25B11/091Y02E60/36Y02P20/133
Inventor 谢自力桑艺萌刘斌
Owner GX OPTOELECTRONIC TECH INST CO LTD