A kind of au-au dimer array structure and its preparation method and application

Abstract

The invention relates to the technical field of surface enhanced Raman scattering active substrates, in particular to an Au-Au dimer array structure and a preparation method and application thereof. The invention discloses an Au-Au dimer array structure, which comprises a substrate and an Au-Au columnar dimer structure arranged on the substrate in an array; the Au-Au dimer array structure is characterized by comprising first gold particles, a silicon dioxide interlayer and second gold particles, wherein the three parts sequentially extend upwards from the substrate. When the Au-Au dimer arraystructure is used for an SERS substrate, a Raman signal is stable, and the repeatability is good; adjacent particles generate coupling of localized surface plasmas, so that plasma resonance is enhanced; and a stronger SERS effect is generated by being compared with single particles.

Description

technical field

[0001] The invention relates to the technical field of surface-enhanced Raman scattering active substrates, in particular to an Au-Au dimer array structure and its preparation method and application. Background technique

[0002] Surface-enhanced Raman scattering (SERS) technology overcomes the inherent weak signal of traditional Raman spectroscopy, and can increase the Raman intensity by several orders of magnitude, which is enough to detect the Raman signal of a single molecule, and can be used for Trace material analysis, flow cytometry, and other applications, which are not enough for the sensitivity and measurement speed of traditional Raman, are widely used in chemical, catalysis, biomedical, and environmental fields. .

[0003] Raman enhancement requires a metal surface with nanoscale roughness as a substrate, that is, an active enhancement substrate. Molecules adsorbed on this surface will produce Raman enhancement. The preparation of an active enhan...

Examples

Embodiment 1

[0058] This example discloses the implementation of the construction of the first gold particles, as follows:

[0059] Cut out two silicon wafers, the thickness is 0.2mm, the size is 2cm×2cm, and they are marked as No. Sulfuric acid, 1.1g / m hydrogen peroxide water, and deionized water were used for ultrasonic cleaning. The ultrasonic frequency was 20KHz and the ultrasonic power was 500W. After evaporation, place the silicon wafer in an ultraviolet ozone cleaner for 30 minutes of irradiation to obtain a silicon wafer with a hydrophilic surface;

[0060] Take 10 μL of polystyrene microsphere suspension with a content of 2.5wt% and a diameter of 300nm and 500nm respectively, and mix it with an equal volume of absolute ethanol, and then carry out ultrasonic vibration for 30min, so that uniformly dispersed polystyrene microspheres can be prepared. Microsphere ethanol dilution solution, ultrasonic frequency 40KHz, ultrasonic power 300W, and then adopt the gas-liquid interface self-...

Embodiment 2

[0066] This example discloses an implementation of an Au-Au dimer array structure, specifically as follows:

[0067] Cut out 3 pieces of silicon wafers, the thickness is 0.2mm, the size is 2cm×2cm, marked as No. 1, 2, and 3 silicon wafers, and then put these silicon wafers into deionized water, absolute ethanol, acetone, ml concentrated sulfuric acid, 1.1g / ml hydrogen peroxide, and deionized water for ultrasonic cleaning. The ultrasonic frequency is 20KHz and the ultrasonic power is 1000W. Each liquid is ultrasonically cleaned for 40 minutes, and then placed in an oven for drying at 90°C until the water on the silicon wafer is completely evaporated. Finally, place the silicon wafer in an ultraviolet ozone cleaning machine for 30 minutes of irradiation to obtain a silicon wafer with a hydrophilic surface;

[0068] Take 20 μL of polystyrene microsphere suspension with a content of 2.5wt% and a diameter of 300 nm, mix it with an equal volume of absolute ethanol, and then conduct ...

Embodiment 3

[0080] This example discloses an implementation of an Au-Au dimer array structure, specifically as follows:

[0081]Cut out 3 pieces of silicon wafers with a thickness of 0.2mm and a size of 2cm×2cm. Put the silicon wafers into deionized water, absolute ethanol, acetone, 1.84g / ml concentrated sulfuric acid, 1.1g / ml hydrogen peroxide, deionized Ultrasonic cleaning in ionized water, ultrasonic frequency 20KHz, ultrasonic power 500W, each liquid was ultrasonically cleaned for 40 minutes, and then dried in an oven at 110°C. After the water on the silicon wafer was completely evaporated, the silicon wafer was placed in an ultraviolet ozone cleaning machine Medium irradiation for 30 minutes to obtain a silicon wafer with a hydrophilic surface;

[0082] Take 10 μL of polystyrene microsphere suspension with a content of 2.5wt% and a diameter of 500 nm, mix it with an equal volume of absolute ethanol, and then perform ultrasonic oscillation for 15 minutes to obtain a uniformly disperse...

technical field

[0001] The invention relates to the technical field of surface-enhanced Raman scattering active substrates, in particular to an Au-Au dimer array structure and its preparation method and application. Background technique

[0002] Surface-enhanced Raman scattering (SERS) technology overcomes the inherent weak signal of traditional Raman spectroscopy, and can increase the Raman intensity by several orders of magnitude, which is enough to detect the Raman signal of a single molecule, and can be used for Trace material analysis, flow cytometry, and other applications, which are not enough for the sensitivity and measurement speed of traditional Raman, are widely used in chemical, catalysis, biomedical, and environmental fields. .

[0003] Raman enhancement requires a metal surface with nanoscale roughness as a substrate, that is, an active enhancement substrate. Molecules adsorbed on this surface will produce Raman enhancement. The preparation of an active enhan...

Examples

Embodiment 1

[0058] This example discloses the implementation of the construction of the first gold particles, as follows:

[0059] Cut out two silicon wafers, the thickness is 0.2mm, the size is 2cm×2cm, and they are marked as No. Sulfuric acid, 1.1g / m hydrogen peroxide water, and deionized water were used for ultrasonic cleaning. The ultrasonic frequency was 20KHz and the ultrasonic power was 500W. After evaporation, place the silicon wafer in an ultraviolet ozone cleaner for 30 minutes of irradiation to obtain a silicon wafer with a hydrophilic surface;

[0060] Take 10 μL of polystyrene microsphere suspension with a content of 2.5wt% and a diameter of 300nm and 500nm respectively, and mix it with an equal volume of absolute ethanol, and then carry out ultrasonic vibration for 30min, so that uniformly dispersed polystyrene microspheres can be prepared. Microsphere ethanol dilution solution, ultrasonic frequency 40KHz, ultrasonic power 300W, and then adopt the gas-liquid interface self-...

Embodiment 2

[0066] This example discloses an implementation of an Au-Au dimer array structure, specifically as follows:

[0067] Cut out 3 pieces of silicon wafers, the thickness is 0.2mm, the size is 2cm×2cm, marked as No. 1, 2, and 3 silicon wafers, and then put these silicon wafers into deionized water, absolute ethanol, acetone, ml concentrated sulfuric acid, 1.1g / ml hydrogen peroxide, and deionized water for ultrasonic cleaning. The ultrasonic frequency is 20KHz and the ultrasonic power is 1000W. Each liquid is ultrasonically cleaned for 40 minutes, and then placed in an oven for drying at 90°C until the water on the silicon wafer is completely evaporated. Finally, place the silicon wafer in an ultraviolet ozone cleaning machine for 30 minutes of irradiation to obtain a silicon wafer with a hydrophilic surface;

[0068] Take 20 μL of polystyrene microsphere suspension with a content of 2.5wt% and a diameter of 300 nm, mix it with an equal volume of absolute ethanol, and then conduct ...

Embodiment 3

[0080] This example discloses an implementation of an Au-Au dimer array structure, specifically as follows:

[0081]Cut out 3 pieces of silicon wafers with a thickness of 0.2mm and a size of 2cm×2cm. Put the silicon wafers into deionized water, absolute ethanol, acetone, 1.84g / ml concentrated sulfuric acid, 1.1g / ml hydrogen peroxide, deionized Ultrasonic cleaning in ionized water, ultrasonic frequency 20KHz, ultrasonic power 500W, each liquid was ultrasonically cleaned for 40 minutes, and then dried in an oven at 110°C. After the water on the silicon wafer was completely evaporated, the silicon wafer was placed in an ultraviolet ozone cleaning machine Medium irradiation for 30 minutes to obtain a silicon wafer with a hydrophilic surface;

[0082] Take 10 μL of polystyrene microsphere suspension with a content of 2.5wt% and a diameter of 500 nm, mix it with an equal volume of absolute ethanol, and then perform ultrasonic oscillation for 15 minutes to obtain a uniformly disperse...

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