Sulfur ion implanted nano diamond-graphene composite film electrode and preparation method thereof

A composite technology of nano-diamond and graphene, which is applied in the direction of ion implantation plating, metal material coating process, gaseous chemical plating, etc. The field of precision electrochemical detection, the influence of electrical and electrochemical performance and other issues, to achieve the effect of excellent electrochemical activity, increased electrochemical active area, and wide potential window

Active Publication Date: 2020-05-15
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The results of sulfur ion implantation and annealing of conventional NCD films show that sulfur ion implantation improves the conductivity of grains, and the electrochemical response characteristics of sulfur ion implanted NCD films after annealing at 900 ° C are greatly improved, but the background current is still Larger, the potential window is still narrow, it is difficult to be used in the field of high-precision electrochemical detection
[0004] The NCD-G film is different from the traditional NCD film, which is composed of nano-diamond and graphene. When sulfur ions are implanted into the NCD-G film, the electrical and electrochemical properties of graphene with different morphologies and positional relationships in the grain boundaries are affected. impact, no literature reports
At the same time, it has been studied in the literature that sulfur is covalently grafted to the surface of graphene as an anchor metal single atom or metal nano-ion, and the good conductivity of graphene is used to improve the electrochemical catalytic properties of the anchor material, and No report on conductivity and electrochemical activity of sulfur-doped graphene

Method used

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  • Sulfur ion implanted nano diamond-graphene composite film electrode and preparation method thereof
  • Sulfur ion implanted nano diamond-graphene composite film electrode and preparation method thereof
  • Sulfur ion implanted nano diamond-graphene composite film electrode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Diamond powder (purchased from Shanghai Jiye Abrasives Co., Ltd., model w1) and glycerin (glycerin) were mixed in a ratio of 1g:100ml, stirred evenly with a glass rod, placed in an ultrasonic cleaner for ultrasonic dispersion for 5 minutes, and made It is fully and evenly dispersed to form a diamond powder grinding paste, which is reserved for later use; take an appropriate amount of prepared diamond powder grinding paste on the polishing flannelette, and polish the monocrystalline silicon wafer for 30 minutes; Silicon wafers were ultrasonically cleaned in acetone and alcohol solutions for 5 minutes; the cleaned silicon wafers were blown dry with a nitrogen gun, and wrapped with lens cleaning paper for later use.

[0043]Put the seed crystal-finished single crystal silicon substrate into the hot wire chemical vapor deposition equipment, use acetone as the carbon source, and bring the acetone into the reaction chamber by hydrogen bubbling. Among them, the flow ratio of h...

Embodiment 2

[0052] Diamond powder (purchased from Shanghai Jiye Abrasives Co., Ltd., model w1) and glycerin (glycerin) were mixed in a ratio of 1g:100ml, stirred evenly with a glass rod, placed in an ultrasonic cleaner for ultrasonic dispersion for 5 minutes, and made It is fully and evenly dispersed to form a diamond powder grinding paste, which is reserved for later use; take an appropriate amount of prepared diamond powder grinding paste on a polishing flannelette, and polish the monocrystalline silicon wafer for 30 minutes; Silicon wafers were ultrasonically cleaned in acetone and alcohol solutions for 5 minutes; the cleaned silicon wafers were blown dry with a nitrogen gun, and wrapped with lens cleaning paper for later use.

[0053] Put the seed crystal-finished single crystal silicon substrate into the hot wire chemical vapor deposition equipment, use acetone as the carbon source, and bring the acetone into the reaction chamber by hydrogen bubbling. The flow ratio of hydrogen and a...

Embodiment 3

[0062] Diamond powder (purchased from Shanghai Jiye Abrasives Co., Ltd., model w1) and glycerin (glycerin) were mixed in a ratio of 1g:100ml, stirred evenly with a glass rod, placed in an ultrasonic cleaner for ultrasonic dispersion for 5 minutes, and made It is fully and evenly dispersed to form a diamond powder grinding paste, which is reserved for later use; take an appropriate amount of prepared diamond powder grinding paste on a polishing flannelette, and polish the monocrystalline silicon wafer for 30 minutes; Silicon wafers were ultrasonically cleaned in acetone and alcohol solutions for 5 minutes; the cleaned silicon wafers were blown dry with a nitrogen gun, and wrapped with lens cleaning paper for later use.

[0063] Put the seed crystal-finished single crystal silicon substrate into the hot wire chemical vapor deposition equipment, use acetone as the carbon source, and bring the acetone into the reaction chamber by hydrogen bubbling. The flow ratio of hydrogen and a...

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Abstract

The invention provides a sulfur ion implanted nano diamond-graphene composite film. The nano diamond-graphene composite film is prepared on a monocrystalline silicon substrate by hot filament chemicalvapor deposition, sulfur ion implantation is performed on the prepared composite film, and vacuum annealing treatment is performed on the implanted composite film to obtain an SNCD-G composite film.The composite film has excellent electrochemical activity, extremely low background current and a wide potential window, and is very beneficial to application in the field of high-precision trace detection.

Description

technical field [0001] The invention relates to a nano-diamond-graphene composite film electrode implanted with sulfur ions and a preparation method thereof. Background technique [0002] Diamond thin films are considered ideal materials for high-precision electrochemical detection electrodes due to their extremely low background current, wide potential window and good electrochemical response characteristics. However, the conventionally grown nano-diamond film (NCD) is composed of nano-diamond grains and amorphous carbon grain boundaries. Amorphous carbon or nano-graphite has good electrical properties, which can effectively promote the electrochemical response of the electrode, making the electrochemical response As the current increases, the rate of charge transfer decreases. However, the amorphous carbon phase also greatly increases the background current, reduces the potential window, and limits the application of nanodiamond electrodes in the field of high-precision e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C14/48C23C14/58C23C28/04
CPCC23C16/26C23C14/48C23C14/5806C23C28/04
Inventor 胡晓君蒋梅燕陈成克李晓
Owner ZHEJIANG UNIV OF TECH
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