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Self-powered ultraviolet detection film with ZnO-based sandwich structure and preparation method of self-powered ultraviolet detection film

A sandwich and self-powered technology, applied in the field of microelectronics, can solve the problems of low sensitivity and large dark current, achieve process compatibility, reduce dark current, and improve light absorption ability

Inactive Publication Date: 2020-05-22
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The object of the present invention is to provide a ZnO-based sandwich structure self-powered ultraviolet detection film and a preparation method thereof, which have high sensitivity, Good response performance, good stability, self-powered advantages

Method used

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  • Self-powered ultraviolet detection film with ZnO-based sandwich structure and preparation method of self-powered ultraviolet detection film
  • Self-powered ultraviolet detection film with ZnO-based sandwich structure and preparation method of self-powered ultraviolet detection film
  • Self-powered ultraviolet detection film with ZnO-based sandwich structure and preparation method of self-powered ultraviolet detection film

Examples

Experimental program
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Embodiment 1

[0028] In this embodiment, the ZnO-based sandwich structure is a ZnO-NRs / CuO / PEDOT:PSS sandwich structure, and the preparation method of the self-powered ultraviolet detection film includes the following steps:

[0029] Step 1, using magnetron sputtering technology to prepare a ZnO seed layer on a glass substrate with an indium tin oxide electrode layer to obtain a substrate with a ZnO seed layer;

[0030] Specifically, in this step, the ITO glass substrate is cleaned, and the ITO glass substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes; subsequently, the ITO substrate is blown dry with a nitrogen gas flow; Methods ZnO seed layer flakes were prepared on ITO glass substrate to obtain a substrate with ZnO seed layer.

[0031] Among them, the ZnO seed layer is deposited on the glass substrate with the indium tin oxide conductive layer by magnetron sputtering, specifically including:

[0032] Step 11, selecting a ZnO target with a purity...

Embodiment 2

[0052] The ZnO-based sandwich structure of this embodiment does not contain CuO film, but its preparation method is basically the same as that of Example 1, specifically: magnetron sputtering a ZnO seed layer film on a glass substrate with an indium tin oxide electrode layer, and oxidized The indium tin electrode layer was used as the bottom electrode, and then the ZnO nanocolumns (ZnO NRs) were prepared on the ZnO seed layer film by the hydrothermal method. The particles were deposited on the PEDOT:PSS layer as the upper electrode as the electrode, and finally the ZnO NRs-PEDOT:PSS ultraviolet detection film was obtained.

[0053] Figure 4 It is a real-time electrical and ultraviolet light response test chart for ZnO NRs-PEDOT:PSS ultraviolet detection film. Such as Figure 4 Shown: 1 is the I-T diagram of 365nm ultraviolet light irradiation and 10-second cycle off; 2 is the I-T diagram of 254nm ultraviolet light irradiation and 10-second cycle off. It can be seen that th...

Embodiment 3

[0055] The ZnO-based sandwich structure of this example is the same as that of Example 1, the difference is that the upper electrode is prepared by spraying gold on the ultraviolet detection film to explore the influence of different electrodes on the performance of the ultraviolet detection film, specifically: using the basic and implementation The same preparation method as in Example 1, magnetron sputtering ZnO seed layer thin film on ITO glass, using ITO conductive layer as the bottom electrode, followed by preparing ZnO NRs on the ZnO seed layer by hydrothermal method, and annealing the ZnO NRs The CuO thin film layer was deposited by spin coating, the PEDOT:PSS layer was scraped on the CuO thin film, dried at 60°C for 2 hours and cooled to room temperature naturally, and then gold was sprayed on the PEDOT:PSS layer to prepare the upper electrode.

[0056] Figure 5 It is the real-time electrical and ultraviolet light response test chart of ZnO NRs-CuO-PEDOT:PSS ultraviol...

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Abstract

The invention belongs to the technical field of microelectronics, and relates to a self-powered ultraviolet detection film with a ZnO-based sandwich structure and a preparation method of the self-powered ultraviolet detection film. The preparation method comprises: preparing a ZnO seed layer on a substrate with an electrode layer to obtain a substrate with the ZnO seed layer; growing a ZnO nano column on the surface of the ZnO seed layer to obtain a substrate with a semiconductor material ZnO nano column; carrying out annealing treatment on the substrate obtained in the previous step; and depositing a PEDOT: PSS layer on the substrate obtained in the previous step to obtain the self-powered ultraviolet detection film. After the film is subjected to ultraviolet irradiation, the current of the film is increased from the nanoampere level of the ground state to the microampere level, the current value can quickly return to the nanoampere level of the ground state after ultraviolet light isturned off, the process can be cyclically repeated, the current is not obviously attenuated under the irradiation of an ultraviolet lamp, and the performance can be kept for 2-3 months. According tothe invention, the cost is lower and easier to obtain, the preparation process is simpler, the photoresponse performance is more excellent, and the applicability is stronger.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a ZnO-based sandwich structure self-powered ultraviolet detection film and a preparation method thereof. Background technique [0002] In recent years, with the development of science and technology and the maturity of optoelectronic technology, ultraviolet photodetectors have been widely used, such as in environmental monitoring, space technology, medical detection, biological fields and military communications. [0003] Traditional ultraviolet photodetectors are mainly divided into two categories: silicon-based semiconductors and photomultiplier tubes. Silicon-based semiconductors have a certain response to the visible light region due to their bandgap of 1.2eV, which leads to poor sensitivity to ultraviolet detection. Ideally, if an optical filter is added externally, it will also increase the complexity of the device structure and cause some energy consum...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/1135H10K30/152H10K30/40Y02E10/549
Inventor 卢振亚邹节新杨凤金
Owner SOUTH CHINA UNIV OF TECH
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