MSM type alpha-Ga2O3 based solar blind ultraviolet light detector

A -ga2o3, detector technology, applied in the field of MSM type α-Ga2O3-based sun-blind ultraviolet light detectors and its preparation, can solve the problems of crystal quality decline, lower device electrical performance and stability, etc., and achieve stable and good performance Detection ability, effect of high light-to-dark current ratio

Active Publication Date: 2020-06-16
HUBEI UNIV +1
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, to achieve solar-blind ultraviolet detection, the band gap of the active layer semiconductor material must be greater than 4.4eV, while MgZnO and AlGaN increase the band gap to 4.4eV by increasing the Mg and Al content respectively, which will make the crystal quality decrease significantly. , will greatly reduce the electrical performance and stability of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MSM type alpha-Ga2O3 based solar blind ultraviolet light detector
  • MSM type alpha-Ga2O3 based solar blind ultraviolet light detector
  • MSM type alpha-Ga2O3 based solar blind ultraviolet light detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Such as figure 1 As shown, a kind of MSM type α-Ga of this embodiment 2 o 3 A solar-blind ultraviolet photodetector, the detector comprises an a-plane sapphire substrate, an active layer, and a pair of parallel metal electrodes from bottom to top, wherein: the active layer is (110)-oriented α-Ga 2 o 3 thin film, the material of the parallel metal electrodes is Au, the thickness of the substrate is 0.43 mm, the thickness of the active layer is 120 nm, the thickness of the parallel metal electrodes is 50 nm, and the distance between the parallel metal electrodes is 10 μm .

[0056] The MSM type α-Ga mentioned above in this embodiment 2 o 3 The base sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0057] Step 1: Preparation of Ga by sintering by solid phase sintering method 2 o 3 Ceramic target

[0058] 1.1 Weigh 10~15g Ga 2 o 3 Powder, add ultra-pure water, mix evenly, put it in a ball mill jar and weigh...

Embodiment 2

[0067] Embodiment 2 (comparative example)

[0068] A kind of MSM type amorphous α-Ga of this embodiment 2 o 3 A base sun-blind ultraviolet light detector, the detector includes an a-plane sapphire substrate, an active layer, and a pair of parallel metal electrodes from bottom to top, wherein: the active layer is amorphous Ga 2 o 3 thin film, the material of the parallel metal electrodes is Au, the thickness of the substrate is 0.43 mm, the thickness of the active layer is 120 nm, the thickness of the parallel metal electrodes is 55 nm, and the distance between the parallel metal electrodes is 10 μm .

[0069] The MSM type amorphous α-Ga mentioned above in this embodiment 2 o 3 The base sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0070] Step 1 utilizes the Ga in embodiment 1 2 o 3 Fabrication of solar-blind ultraviolet light detectors with ceramic targets

[0071] 1.1 Ga prepared in step 1 2 o 3 The ceram...

Embodiment 3

[0075] Embodiment 3 (comparative example)

[0076] A kind of MSM type β-Ga of this embodiment 2 o 3 A solar-blind ultraviolet photodetector, which includes a c-plane sapphire substrate, an active layer, and a pair of parallel metal electrodes from bottom to top, wherein: the active layer is β-Ga 2 o 3 thin film, the material of the parallel metal electrodes is Au, the thickness of the substrate is 0.43 mm, the thickness of the active layer is 150 nm, the thickness of the parallel metal electrodes is 55 nm, and the distance between the parallel metal electrodes is 10 μm .

[0077] The MSM type β-Ga mentioned above in this embodiment 2 o 3 The base sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0078] Step 1: Preparation of Ga by sintering by solid phase sintering method 2 o 3 Ceramic target

[0079] 1.1 Weigh 10g Ga 2 o 3 Powder, add 15g of deionized water, then place in the ball mill jar (the ball milling m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an MSM type alpha-Ga2O3-based solar blind ultraviolet light detector and a preparation method thereof. The detector sequentially comprises an a-surface sapphire substrate, an active layer and a pair of parallel metal electrodes from bottom to top, wherein the active layer is a (110) oriented alpha-Ga2O3 film. According to the invention, the alpha-Ga2O3 and the sapphire havethe same crystal form and low lattice mismatch rate, the (110) oriented alpha-Ga2O3 film with better crystallization quality grows on the a-surface sapphire, and the film has high electron mobility,so that the gain of the device is large, and the light-dark current ratio of the device is large, and the responsivity is high. Besides, the solar blind ultraviolet light detector with the MSM structure prepared by the invention is simple in structure and manufacturing process, and the detector prepared by the invention has good detection capability on deep ultraviolet light with the wavelength of245nm, and is small in dark current, large in light-dark current ratio, high in responsivity and stable in performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detectors, and in particular relates to a sun-blind ultraviolet light detector with an MSM structure. More specifically, the invention relates to an MSM type α-Ga 2 o 3 A sun-blind ultraviolet photodetector and a preparation method thereof. Background technique [0002] Since the deep ultraviolet band (200-280nm) in sunlight will be strongly absorbed by the ozone layer before reaching the earth's surface, the solar-blind ultraviolet photodetector has the characteristics of strong anti-interference ability and high sensitivity when working on the earth's surface. It has very important applications in military and people's livelihood fields such as missile early warning, ultraviolet communication, fire prevention and control, and environmental monitoring. Compared with the traditional vacuum ultraviolet photomultiplier tube with high power consumption and high price, solar-blind ultraviolet ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/102H01L31/0224H01L31/18
CPCH01L31/022408H01L31/032H01L31/102H01L31/18Y02P70/50
Inventor 何云斌黄攀黎明锴卢寅梅刘琦李迎香张清风陈俊年
Owner HUBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap