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Preparation method and application of large-area-distributed Ag@SiO2 nanoparticles

A nanoparticle and large-area technology, applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problem of unsatisfactory distribution of nanoparticles, poor repeatability and stability, and difficulty in large-scale production and other problems to achieve the effect of improving accuracy and sensitivity, good stability and short time required

Active Publication Date: 2020-07-14
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation process of this kind of chemical method is relatively complicated, and it is difficult to produce on a large scale; moreover, the prepared Ag@SiO 2 When nanoparticles are used as SERS substrates, they need to be assembled to form an ordered structure, or directly use Ag@SiO 2 The solution is used as the SERS substrate, the former process is complicated, and Ag@SiO 2 The unsatisfactory distribution uniformity of nanoparticles will lead to poor repeatability of SERS detection; the latter is more unevenly distributed because the nanoparticles are suspended in the solution, and the nanoparticles will move in the solution, and it is difficult to form a stable structure between the nanoparticles. "Hot spot", Raman enhancement only comes from the electromagnetic field enhanced long-range action generated by the Ag nanoparticles wrapped in the shell, so there are problems of uniformity, poor repeatability and stability, and small hot spot area

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  • Preparation method and application of large-area-distributed Ag@SiO2 nanoparticles
  • Preparation method and application of large-area-distributed Ag@SiO2 nanoparticles
  • Preparation method and application of large-area-distributed Ag@SiO2 nanoparticles

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Embodiment 1

[0040] A large area distribution of Ag@SiO 2 A method for preparing nanoparticles, comprising the steps of:

[0041] (1) Clean the silicon wafer, the specific steps are as follows:

[0042] (1.1) Put the silicon wafer into a mixed solution of ammonia water, hydrogen peroxide and deionized water with a volume ratio of 1:2:6;

[0043] (1.2) Heat the solution on a heating platform, keep the solution boiling for 5 minutes and then stop heating;

[0044] (1.3) After the solution is cooled to room temperature, ultrasonically clean the wafer in deionized water and alcohol for 3 times, and blow dry with nitrogen;

[0045] (2) Use plasma etching technology to carry out surface treatment on the silicon wafer. The surface treatment is carried out under the working pressure of 0.1 Torr, and the treatment time is 10 minutes. After the treatment is completed, the silicon wafer is stored in a vacuum;

[0046] (3) Use magnetron sputtering technology to sputter Ag on the silicon wafer. The ...

Embodiment 2

[0051] A large area distribution of Ag@SiO 2 A method for preparing nanoparticles, comprising the steps of:

[0052] (1) Clean the silicon wafer, the specific steps are as follows:

[0053] (1.1) Put the silicon wafer into a mixed solution of ammonia water, hydrogen peroxide and deionized water with a volume ratio of 1:2:6;

[0054] (1.2) Heat the solution on a heating platform, keep the solution boiling for 5 minutes and then stop heating;

[0055] (1.3) After the solution is cooled to room temperature, ultrasonically clean the wafer in deionized water and alcohol for 3 times, and blow dry with nitrogen;

[0056] (2) Use plasma etching technology to perform surface treatment on the silicon wafer. The surface treatment is carried out under the working pressure of 0.1 Torr, and the treatment time is 10 minutes. After the treatment is completed, the silicon wafer is exposed to the air for 2 hours;

[0057] (3) Use magnetron sputtering technology to sputter Ag on the silicon w...

Embodiment 3

[0062] A large area distribution of Ag@SiO 2 A method for preparing nanoparticles, comprising the steps of:

[0063] (1) Clean the silicon wafer, the specific steps are as follows:

[0064] (1.1) Put the silicon wafer into a mixed solution of ammonia water, hydrogen peroxide and deionized water with a volume ratio of 1:2:6;

[0065] (1.2) Heat the solution on a heating platform, keep the solution boiling for 5 minutes and then stop heating;

[0066] (1.3) After the solution is cooled to room temperature, ultrasonically clean the wafer in deionized water and alcohol for 3 times, and blow dry with nitrogen;

[0067] (2) Store silicon wafers in a vacuum;

[0068] (3) Use magnetron sputtering technology to sputter Ag on the silicon wafer. The sputtering power is 10W, the time is 2min, and the sputtering thickness is 10nm. ×10 -4 Pa, set the flow rate of the argon gas to 20 sccm, place the silver target on the direct current target position, and the distance between the target...

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Abstract

The invention relates to the technical field of nano materials, and discloses a preparation method and application of large-area-distributed Ag@SiO2 nano particles. The preparation method comprises the following steps that a silicon wafer is cleaned; Ag is sputtered on the silicon wafer through a magnetron sputtering technology; in-situ heat treatment is carried out on the silicon wafer subjectedto Ag sputtering at the treatment temperature of 200-250 DEG C for 10-15 minutes; and Ag and SiO2 are co-sputtered on the silicon wafer subjected to heat treatment through the magnetron sputtering technology to obtain the large-area-distributed Ag@SiO2 nanoparticles. According to the preparation method, the large-area-distributed Ag@SiO2 nanoparticles can be directly obtained, the preparation process is simple, the needed time is short, and the method can adapt to large-scale production; and when the prepared Ag@SiO2 nanoparticles are used as an SERS substrate, the repeatability, the accuracyand the sensitivity of SERS detection can be improved.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a large-area distributed Ag@SiO 2 Preparation methods and applications of nanoparticles. Background technique [0002] The Surface-Enhanced Raman Scattering (SERS) effect refers to the electromagnetic enhancement caused by the excitation of localized plasmons on the surface of the compound adsorbed on the roughened metal surface, as well as the atomic clusters on the rough surface and their adsorption. The molecules on the surface constitute the Raman-enhanced active site, and the interaction of the two makes the Raman scattering of the analyte produce a great enhancement effect. It has high sensitivity, high resolution, and is not affected by water, can provide rich molecular spectral information, and is widely used in the fields of physics, biology and chemistry. [0003] The SERS effect has special requirements on the morphology and dielectric constant of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/58C23C14/10C23C14/02B22F1/02B22F1/00G01N21/65B82Y30/00B82Y40/00
CPCC23C14/35C23C14/165C23C14/5806C23C14/10C23C14/022G01N21/658B82Y30/00B82Y40/00B22F1/07B22F1/16B22F1/054
Inventor 张永军王雅新赵晓宇温嘉红
Owner HANGZHOU DIANZI UNIV