Field effect transistor and preparation method and application thereof

Abstract

The invention provides a field effect transistor and a preparation method and application thereof. The field effect transistor comprises an insulating substrate and a two-dimensional nano material layer arranged on an insulating layer of the insulating substrate, a source electrode and a drain electrode are arranged on the two-dimensional nano material layer, and the width of a conducting channelbetween the source electrode and the drain electrode is 0.5-10nm. According to the field effect transistor, the performance and the power consumption of the field effect transistor can be effectivelyimproved by controlling the conducting channel between the source electrode and the drain electrode. The conductive channel of the field effect transistor is prepared by an electric feedback method, and the electric feedback method realizes accurate control of the size of the conductive channel, so that the size of the conductive channel can be reduced to below 3nm, and the requirements of small size and high performance of a silicon-based integrated circuit technology can be met.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to a field effect transistor and its preparation method and application. Background technique [0002] Field effect transistor is an active device that can be controlled by free carriers. Its main components include semiconductor, source, drain and gate. The current between source and drain is controlled by gate modulation. Thus realizing the on state and the off state. In recent years, field-effect transistors, as important semiconductor devices, have been used in large-scale integrated circuits, and play an irreplaceable role in the preparation of biosensors, sensors and power control devices. [0003] One of the cores of field effect transistors lies in the channel part of the back gate modulation, and the channel of traditional field effect transistors is single crystal silicon. In the past ten years, the industry's development strategy for field effec...

AI Technical Summary

Problems solved by technology

For example, there are limitations in exposure light sources and yields in the preparation process; at the same time, as the size continues to shrink, gate leakage and channel leakage caused by quantum tunneling effects, hot carrier effects caused by short channels, and Problems such as channel carrier distribution quantum fluctuations are becoming more and more significant, seriously affecting the performance and power consumption value brought about by scaling down

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